Abstract: An optimization device includes an output data acquisitor that acquires output data having a second number of dimensions obtained by performing an experiment or a simulation, an evaluation value calculator that calculates and outputs an evaluation value of the output data, a features extractor that extracts an output data features having a third number of dimensions different from the second number of dimensions, an input parameter converter that generates a conversion parameter related to the output data features predicted from the input parameters, a next input parameter determinator that determines a next input parameter to be acquired by the output data acquisitor, based on the conversion parameter and the corresponding evaluation value, and an iterative determinator that repeats processes of the output data acquisitor, the input/output data storage, the evaluation value calculator, the features extractor, the input parameter converter, and the next input parameter determinator.

Abstract: An optimization device includes an output data acquisitor that acquires output data having a second number of dimensions obtained by performing an experiment or a simulation, an evaluation value calculator that calculates and outputs an evaluation value of the output data, a features extractor that extracts an output data features having a third number of dimensions different from the second number of dimensions, an input parameter converter that generates a conversion parameter related to the output data features predicted from the input parameters, a next input parameter determinator that determines a next input parameter to be acquired by the output data acquisitor, based on the conversion parameter and the corresponding evaluation value, and an iterative determinator that repeats processes of the output data acquisitor, the input/output data storage, the evaluation value calculator, the features extractor, the input parameter converter, and the next input parameter determinator.

Abstract: According to one embodiment, a semiconductor device includes a drain region, a source region, a channel region, an insulating film, a gate electrode, a first semiconductor region, and a second semiconductor region. The source region includes a source layer of the first conductivity type, a first back gate layer of the second conductivity type, and a second back gate layer of the second conductivity type. The first back gate layer is adjacent to the second semiconductor region on one side in a channel length direction, and is adjacent to the source layer on one other side in the channel length direction. The second back gate layer is adjacent to the source layer on the one side in the channel length direction, and is adjacent to the second semiconductor region on the one other side in the channel length direction.

Abstract: According to one embodiment, a semiconductor device includes a drain region, a source region, a channel region, an insulating film, a gate electrode, a first semiconductor region, and a second semiconductor region. The source region includes a source layer of the first conductivity type, a first back gate layer of the second conductivity type, and a second back gate layer of the second conductivity type. The first back gate layer is adjacent to the second semiconductor region on one side in a channel length direction, and is adjacent to the source layer on one other side in the channel length direction. The second back gate layer is adjacent to the source layer on the one side in the channel length direction, and is adjacent to the second semiconductor region on the one other side in the channel length direction.