Abstract: A method for controlling cleaning of an inner surface of a chamber of a plasma processing apparatus is provided. The method comprises; processing a substrate using plasma generated in the chamber, the substrate being disposed on a substrate support in the chamber and in a region surrounded by an edge ring placed on the substrate support and to which a DC voltage is applied during the plasma generation; measuring a self-bias potential of the edge ring during the plasma generation in said processing the substrate; and controlling the cleaning of the inner surface of the chamber in response to the self-bias potential.

Abstract: A method for controlling cleaning of an inner surface of a chamber of a plasma processing apparatus is provided. The method comprises; processing a substrate using plasma generated in the chamber, the substrate being disposed on a substrate support in the chamber and in a region surrounded by an edge ring placed on the substrate support and to which a DC voltage is applied during the plasma generation; measuring a self-bias potential of the edge ring during the plasma generation in said processing the substrate; and controlling the cleaning of the inner surface of the chamber in response to the self-bias potential.

Abstract: A processing method includes a), b), and c). The a) includes measuring a load imposed on a lift pin when the lift pin lifts a processed substrate from an electrostatic chuck holding the substrate. The b) includes calculating a difference of the load is calculated based on the measured load and an initial load imposed on the lift pins when the lift pins lift the substrate without any residual adsorption force between the electrostatic chuck and the substrate. The c) includes exposing a surface of the electrostatic chuck to first plasma when the difference of the load is equal to or greater than a preset first threshold.