Abstract: A substrate processing method of processing a substrate includes grinding a surface of the substrate; etching the surface of the substrate by supplying an etching liquid to the surface of the substrate after being ground; and removing a metal adhering to the surface of the substrate by supplying a cleaning liquid to the surface of the substrate after being etched. Further, a substrate processing system of processing the substrate includes a grinding device configured to grind the surface of the substrate; an etching liquid supply configured to etch the surface of the substrate by supplying the etching liquid to the surface of the substrate after being ground; and a cleaning liquid supply configured to remove the metal adhering to the surface of the substrate by supplying the cleaning liquid to the surface of the substrate after being etched.

Abstract: In a radio wave emitting apparatus of the present disclosure, a radio wave emitter emits traveling waves into a cavity. A temperature measurer measures a temperature of the signal amplifier. An electric power measurer measures a reflected-wave electric power. A controller (7) executes a first control process and a second control process. In the first control process, a target value of a traveling-wave electric power is set to a first electric power. The second control process includes one or more first periods during which the target value of the traveling-wave electric power is set to the first electric power, and one or more second periods during which the target value of the traveling-wave electric power is set to a second electric power that is less than the first electric power. In the second control process, the one or more first periods and the one or more second periods are repeated alternately one by one.

Abstract: An oscillator (1) according to the present disclosure generates output power, and provides a microwave that is in accordance with the output power as an output wave. The oscillator (1) includes a signal generator (10), a power amplifier (20), and a temperature sensor (40). The signal generator (10) generates an oscillation signal. The power amplifier (20) includes a final stage device (22), and amplifies the oscillation signal to generate the output power. The temperature sensor (40) detects a temperature of the final stage device (22). The final stage device (22) is packaged. The temperature sensor (40) is disposed in a package (200) that includes the final stage device (22).

Abstract: A high-frequency processing device includes a high-frequency power supply, a high-frequency power radiation unit, an impedance adjustment unit, a power detection unit, and a control unit. The high-frequency power supply generates high-frequency power of variable magnitude. The high-frequency power radiation unit emits the high-frequency power toward a target object. The impedance adjustment unit adjusts a load impedance. The power detection unit detects supplied power and reflected power. The control unit calculates a reflectance and a phase difference to obtain the load impedance. The control unit determines whether or not the load impedance falls within a predetermined impedance region corresponding to output power of the high-frequency power supply. The control unit causes the impedance adjustment unit to guide the load impedance to and maintain the load impedance within the predetermined impedance region corresponding to the output power of the high-frequency power supply.

Abstract: A substrate processing system configured to process a substrate includes a first modifying apparatus configured to form, in a combined substrate in which a front surface of a first substrate and a front surface of a second substrate are bonded to each other, an internal modification layer elongated within the first substrate in a plane direction from a center of the first substrate toward at least an edge portion of the first substrate as a removing target; a second modifying apparatus configured to form, within the first substrate, an edge modification layer elongated in a thickness direction of the first substrate along a boundary between the edge portion and a central portion of the first substrate; and a separating apparatus configured to separate a portion of the first substrate at a rear surface side, starting from the internal modification layer.

Abstract: An autonomous vehicle includes a road surface image obtaining device, a memory unit that stores map data, an estimating unit that estimates a self-location, and a determining unit that is configured to execute a reliability determining process of determining a reliability of the self-location. The reliability determining process includes a process of determining whether the estimating unit is in a state capable of estimating the self-location, and a process of determining whether a number of matches between the feature points extracted from the map data and the feature points extracted from the traveling data reaches a predetermined threshold. The determining unit is configured to determine the reliability of the self-location based on results of processes included in the reliability determining process.

Abstract: A microwave heating device includes: a heating chamber for accommodating a heating target object, a microwave generator for generating a microwave, and a coaxial connector. The coaxial connector includes a center conductor, an insulator, and an external conductor. The center conductor is connected to an output terminal of the microwave generator. An air gap is defined between the center conductor and the insulator.

Abstract: A bonding method includes: preparing a first semiconductor substrate having a first surface and a second semiconductor substrate having a second surface; hydrophilizing the first surface of the first semiconductor substrate and the second surface of the second semiconductor substrate; bonding the first surface of the first semiconductor substrate and the second surface of the second semiconductor substrate after the hydrophilizing; and bonding the first surface of the first semiconductor substrate and the second surface of the second semiconductor substrate after the hydrophilizing. The enhancing of the bonding strength includes performing heat treatment on the first semiconductor substrate and the second semiconductor substrate in a first temperature range; and performing heat treatment on the first semiconductor substrate and the second semiconductor substrate at a target temperature after the performing of the heat treatment in the first temperature range.

Abstract: A high-frequency heating apparatus according to an embodiment of the present disclosure includes a heating chamber, an electrode, a high-frequency power supply, at least one matching element, and a controller. The heating chamber accommodates a heating target. The high-frequency power supply applies a high-frequency voltage to the electrode. The impedance matcher includes at least one matching element having a matching constant that is variable. The controller stops the high-frequency power supply to complete heating based on a temporal change of the matching constant of the at least one matching element. In this embodiment, a heating target can be heated efficiently.

Abstract: A substrate processing apparatus configured to process a combined substrate in which a first substrate having thereon a device layer and a second substrate are bonded to each other includes a holder configured to hold a rear surface of the second substrate; a processing unit configured to process the first substrate held by the holder; a first processing liquid supply configured to etch a front surface of the first substrate by supplying a first processing liquid to the front surface of the first substrate opposite to a surface thereof where the device layer is provided; and a second processing liquid supply configured to remove a metal contaminant on the rear surface of the second substrate by supplying a second processing liquid to the rear surface of the second substrate.

Abstract: An autonomous traveling vehicle performs data alignment processing, priority order setting processing, identification processing, image matching processing, and own-position estimation processing. The data alignment processing rearranges a plurality of map data into a prescribed order. The identification processing identifies, as an identified group, a group that includes map image data that is most similar to image data when a prescribed condition is satisfied after the data alignment processing. The priority order setting processing further rearranges the plurality of map data rearranged by the data alignment processing, so that the map data belonging to the identified group is used preferentially in the image matching processing.

Abstract: A microwave treatment device includes a heating chamber for accommodating a heating target, a microwave generator, a feeder, a detector, and a controller. The microwave generator generates a microwave having a frequency in a specified frequency band. The feeder radiates the microwave inside the heating chamber. The detector detects a reflected microwave power reflected from the heating chamber. The controller causes the microwave generator to execute a frequency sweeping in the specified frequency band, and controls the microwave generator according to a temporal change in a frequency characteristic of the reflected microwave power. The temporal change in the frequency characteristic of the reflected microwave power is based on the frequency of the microwave, a level of the reflected microwave power, and a time passed from a start of heating. Thus, it is possible to accurately recognize the progress of cooking while heating the object.

Abstract: A high-frequency heating apparatus includes: a heating chamber for accommodating a load; a microwave source; at least one radiator; a temperature detector; and a controller. The microwave source generates a microwave and adjusts the frequency and output of the microwave. The at least one radiator radiates a microwave into the heating chamber. The temperature detector detects the temperature in the heating chamber. The controller causes the microwave source to adjust the output of the microwave based on the temperature profile that defines the temperature change in the load, and the temperature in the heating chamber. According to this aspect, food can be heated in accordance with the temperature profile appropriate for the cooking recipe, thereby ensuring the quality of cooked food.

Abstract: A microwave treatment device of the present disclosure includes heating chamber (1) for accommodating object (2) to be heated, microwave generator (3), heater (7), power feeder (4), detector (5), and controller (6). Microwave generator (3) generates microwaves. Heater (7) includes a heat source other than the microwaves and heats an inside of heating chamber (1). Power feeder (4) supplies the heating chamber with the microwaves. Detector (5) detects reflected power from power feeder (4). Controller (6) controls heater (7) and microwave generator (3). When heater (7) carries out heating, Controller (6) causes microwave generator (3) to generate the microwaves in heating by heater (7). The microwaves have output power such that the reflected power at a level detectable by detector (5) returns. By present disclosure, by understanding progress of cooking, a heating target can be appropriately cooked.

Abstract: A substrate processing method of processing a substrate includes etching a surface of the substrate by supplying an etching liquid containing hydrofluoric acid and phosphoric acid to the surface of the substrate; collecting the etching liquid after being used in the etching; measuring a thickness distribution of the substrate after being etched; and adjusting a composition ratio of the etching liquid by adding, based on the measured thickness distribution, at least hydrofluoric acid or phosphoric acid to the etching liquid collected after being used in the etching.

Abstract: In an RF energy radiation device, a controller controls both an oscillator and a power amplifier to set an operation mode to either a first control mode or a second control mode, in accordance with reflected-wave power that returns from a radiation element and is detected by a detector. In the first control mode, the oscillator oscillates a pulsed RF signal having a first pulse width and a first pulse period. In the first control mode, a protection circuit does not shut off traveling-wave power. In the second control mode, the oscillator oscillates a pulsed RF signal having both a second pulse width different from the first pulse width and a second pulse period different from the first pulse period. Alternatively, the oscillator continuously oscillates an RF signal. In the second control mode, the protection circuit shuts off the traveling-wave power when the reflected-wave power exceeds a predetermined threshold.

Abstract: A substrate processing method of processing a substrate includes etching a first surface of the substrate by supplying an etching liquid containing at least hydrofluoric acid and nitric acid onto the first surface. The etching of the first surface includes determining a scan width as a distance between return points set at both ends of a reciprocating movement, and a scan speed at which an etching liquid supply is reciprocated such that a first time taken for the etching liquid supply that has passed a rotation center to pass the rotation center again after turning around at the end of the reciprocating movement becomes shorter than a second time taken for the etching liquid supplied to the rotation center to be removed to an outer peripheral portion of the substrate by a centrifugal force; and etching the first surface with the determined scan width and the determined scan speed.

Abstract: A flow rate estimating method includes a supply process, an image process, and an estimate process. The supply process supplies processing liquid from a processing-liquid supplying unit to a position that is apart from the center of the substrate while rotating the substrate utilizing a substrate holding unit that rotatably holds the substrate. The image process images a liquid film formed by diffusion of the processing liquid on the surface of the substrate utilizing an imaging unit. The estimate process calculates a characteristic amount that indicates a state of the diffusion of the processing liquid from an imaging result of the imaging unit, and estimates the flow rate by applying the calculated characteristic amount to a correlation function that indicates the correlation between the characteristic amount and the flow rate of the processing liquid supplied to the substrate from the processing-liquid supplying unit.

Abstract: A high frequency heating apparatus of the present disclosure includes a first electrode (11), a second electrode (12), a high frequency power supply, a position adjuster (20), and a controller. The second electrode (12) is disposed facing the first electrode (11). The high frequency power supply supplies high frequency power to the first electrode (11) or the second electrode (12). The position adjuster (20) adjusts the position of the first electrode (11). The controller controls the position adjuster (20). The position adjuster (20) includes a weight (21), one or more connecting lines (22), one or more pulleys (23), and one or more drive units (24). The one or more connecting lines (22) connect the weight (21) and the first electrode (11). The one or more pulleys (23) support the one or more connecting lines (22). The one or more drive units (24) are attached to the one or more pulleys (23) and drive the one or more pulleys (23). In this embodiment, a heating target can be heated efficiently.

Abstract: A high-frequency heating device according to the present disclosure includes a heating chamber, first electrode, second electrode, high-frequency power supply, and controller. The first electrode is an electrode disposed inside the heating chamber. The second electrode is an electrode disposed inside the heating chamber and faces the first electrode. The high-frequency power supply generates high-frequency electric power. The controller controls the high-frequency power supply. The controller controls heating of a heating target placed between the first and second electrodes by causing the high-frequency power supply to apply the high-frequency electric power between the first and second electrodes. The controller causes the high-frequency power supply to selectively perform the heating in a normal mode for heating the whole of the object and the heating in a protection mode for heating the object with prevention of local overheating of the object.