Abstract: A substrate processing technique including: (a) modifying a first base surface of a substrate by supplying a first modifier and a second modifier to the substrate having a surface on which the first base and a second base are exposed, wherein the first modifier contains one or more atoms to which at least one first functional group and at least one second functional group are directly bonded, wherein the second modifier contains an atom to which at least one first functional group and at least one second functional group are directly bonded, and wherein the number of the at least one first functional group contained in one molecule of the second modifier is smaller than the number of the at least one first functional group contained in one molecule of the first modifier; and (b) forming a film on a second base surface by supplying film-forming gas to the substrate.

Abstract: There is provide a technique that includes: etching a base on a surface of a substrate by performing a cycle, the cycle including: (a) forming a layer on a surface of the base by exposing the base to a modifying agent; and (b) causing a reaction between a halogen-containing radical and the base by exposing the layer to a halogen-containing gas such that the layer reacts with the halogen-containing gas to generate the halogen-containing radical.

Abstract: A substrate processing technique including: (a) modifying a first base surface of a substrate by supplying a first modifier and a second modifier to the substrate having a surface on which the first base and a second base are exposed, wherein the first modifier contains one or more atoms to which at least one first functional group and at least one second functional group are directly bonded, wherein the second modifier contains an atom to which at least one first functional group and at least one second functional group are directly bonded, and wherein the number of the at least one first functional group contained in one molecule of the second modifier is smaller than the number of the at least one first functional group contained in one molecule of the first modifier; and (b) forming a film on a second base surface by supplying film-forming gas to the substrate.

Abstract: There is provided a technique that includes: (a) modifying a surface of a first base exposed on a surface of a substrate to be terminated with a hydrocarbon group by supplying a hydrocarbon group-containing gas to the substrate having the first base and a second base exposed on the surface of the substrate; and (b) selectively forming a film on a surface of the second base by supplying an oxygen- and hydrogen-containing gas to the substrate after modifying the surface of the first base.

Abstract: A high-purity reinforcing steel resistant to salt and capable of preventing deterioration of concrete substantially completely over a long period when the salt content of the concrete is not greater than 0.5 wt % in terms of Nacl amount in the sand of concrete. The reinforcing steel essentially consists of 0.001 to 1.0 wt % of C, less than 0.01 wt % of Si, 0.01 to 2.0 wt % of Mn, less than 0.015 wt % of P, less than 0.005 wt % of S, 0.01 to 0.5 wt % of Cu, 0.01 to 0.5 wt % of W, 0.001 to 0.10 wt % of Al and the balance Fe and incidental impurities. Disclosed also is another reinforcing steel capable of remarkably retarding deterioration of concrete even under such a severe corrosive condition that the salt content of the concrete exceeds 0.5 wt % in terms of Nacl amount in the same of concrete. This reinforcing steel essentially consists of 0.001 to 1.0 wt % of C, not greater than 0.05 wt % of Si, 0.01 to 2.0 wt % of Mn, less than 0.015 wt % of P, less than 0.005 wt % of S, 1.0 to 5.5 wt % of Ni, 0.001 to 0.