Abstract: Described herein is a technique capable of forming a film so as to fill an inside of a recess provided on a surface of a substrate. According to one aspect of the technique, there is provided a method of manufacturing a semiconductor device, including: (a) forming a film by performing a cycle a predetermined number of times, the cycle including: (a-1) supplying a gas to a substrate in a process chamber; and (a-2) vacuum-exhausting an inner atmosphere of the process chamber; and (b) generating a predetermined temperature difference between a front surface of the substrate and a back surface of the substrate at a predetermined timing during (a).

Abstract: Described herein is a technique capable of forming a film so as to fill an inside of a recess provided on a surface of a substrate. According to one aspect of the technique, there is provided a method of manufacturing a semiconductor device, including: (a) forming a film by performing a cycle a predetermined number of times, the cycle including: (a-1) supplying a gas to a substrate in a process chamber; and (a-2) vacuum-exhausting an inner atmosphere of the process chamber; and (b) generating a predetermined temperature difference between a front surface of the substrate and a back surface of the substrate at a predetermined timing during (a).

Abstract: An exercise assistance device includes a data obtainer that obtains motion data on a motion of an arm of a user that is taking exercise while swinging the arm, and at least one processor that obtains a type of arm swing form of the user, based on the motion data obtained by the data obtainer.

Abstract: Described herein is a technique capable of forming a film whose characteristics are uniform by discharging a residual component from a plurality of grooves before supplying a process gas. According to one aspect thereof, there is provided a substrate processing apparatus including: (a) loading a substrate on which a plurality of grooves are provided into a process chamber, wherein a residue is adhered to the plurality of the grooves; (b) desorbing the residue from the plurality of the grooves by heating the substrate; and (c) discharging the residue from the plurality of the grooves to a process space of the process chamber after (b) is performed by heating a surface of the substrate to a temperature higher than a temperature of the substrate in (b).

Abstract: Described herein is a technique capable of efficiently removing a foreign substance in a reaction tube. According to one aspect of the technique, there is provided a substrate processing apparatus including: a reaction tube in which a substrate is processed; and a substrate retainer including a plurality of support columns configured to support the substrate, wherein at least one among the plurality of the support columns includes: a hollow portion through which an inert gas is supplied; and a gas supply port through which the inert gas is supplied toward an inner wall of the reaction tube.

Abstract: There is provided a technique that includes a process chamber in which a substrate is processed, a substrate retainer on which a plurality of substrates are stacked in multiple stages, a plasma generator generating plasma inside the process chamber, and a magnet generating a magnetic field inside the process chamber.

Abstract: There is provided a technique that includes: a process chamber in which a substrate is processed; a gas supplier configured to supply a gas into the process chamber; at least one substrate mounting table disposed in the process chamber and including a substrate mounting surface on which the substrate is mounted; and an arm configured to transfer the substrate to the substrate mounting surface while supporting a lower surface of the substrate, wherein the arm includes a support that includes an inclination and is configured to support the substrate.

Abstract: Described herein is a technique capable of capable of uniformly processing a surface of a substrate even when an inductive coupling type substrate processing apparatus is used. According to one aspect of the technique, there is provided a substrate processing apparatus including: a process chamber in which a substrate is processed; a gas supply part configured to supply a gas into the process chamber; a high frequency power supply part configured to supply a high frequency power; a plasma generator including a resonance coil wound on a side of the process chamber, the plasma generator configured to generate a plasma in the process chamber when the high frequency power is supplied to the resonance coil; and a substrate support on which the substrate is placed such that a horizontal center position of the substrate in the process chamber does not overlap with a horizontal center position of the resonance coil.

Abstract: Described herein is a technique capable of capable of uniformly processing a surface of a substrate even when an inductive coupling type substrate processing apparatus is used. According to one aspect of the technique, there is provided a substrate processing apparatus including: a process chamber in which a substrate is processed; a gas supply part configured to supply a gas into the process chamber; a high frequency power supply part configured to supply a high frequency power; a plasma generator including a resonance coil wound on a side of the process chamber, the plasma generator configured to generate a plasma in the process chamber when the high frequency power is supplied to the resonance coil; and a substrate support on which the substrate is placed such that a horizontal center position of the substrate in the process chamber does not overlap with a horizontal center position of the resonance coil.

Abstract: The present invention provides a novel use of a compound having a plasminogen activator inhibitor-1 (PAI-1) inhibitory effect. Specifically, a compound having a PAI-1 inhibitory effect is used as an intranostimulator, an immune checkpoint inhibitor, an inhibitor for exacerbation of tumor cells caused by PD-L1, or an enhancer of immunotherapy for tumors, based on the inhibitory effect of the compound on expression induction of immune checkpoint molecules.

Abstract: There is provided a technique that includes: (a) loading a substrate into a process container; (b) heating the substrate by supplying a first gas, which is heated when passing through a first heater installed at a first gas supply line, to the substrate via a gas supplier; (c) supplying a second gas, which flows through a second gas supply line different from the first gas supply line, to the substrate mounted on a substrate mounting table in the process container, via the gas supplier; and (d) lowering a temperature of the gas supplier by supplying a third gas, which has a temperature lower than that of the first gas, to the gas supplier between (b) and (c).

Abstract: An exercise assistance device includes a data obtainer that obtains motion data on a motion of an arm of a user that is taking exercise while swinging the arm, and at least one processor that obtains a type of arm swing form of the user, based on the motion data obtained by the data obtainer.

Abstract: Described herein is a technique capable of reducing the time necessary for stabilizing the inner temperature of the processing furnace. A substrate processing apparatus may include: a wafer retainer configured to support a plurality of wafers; a upright cylindrical process vessel; a seal cap configured to cover an opening at a lower end of the process vessel; a first heater configured to heat an inside of the process vessel from a lateral side thereof; an insulating unit disposed between the seal cap and the wafer retainer; and a second heater facing at least one of the plurality of wafers and configured to heat the at least one of the plurality of wafers, the second heater including: a pillar penetrating centers of the seal cap and the insulating unit; an annular member connected to and concentric with the pillar; a pair of connecting parts connecting end portions of the annular member to the pillar; and an heating element disposed inside the annular member.

Abstract: There is provided a technique for improving a resistance of a film to vibration in a semiconductor device having a vibrating film, including at least: forming a first silicon oxide film; forming a first silicon nitride film; forming a second silicon oxide film; and forming a second silicon nitride film, and each film formation is performed using a substrate processing apparatus configured to supply gas to a process chamber including upper and bottom electrodes, and selectively supply high frequency power or low frequency power to each of the upper and bottom electrodes by switching.

Abstract: There is provided a technique that includes (a) performing a heating process on a substrate in a process chamber, (b) transferring the substrate between the process chamber and a load lock chamber connected to a vacuum transfer chamber by a transfer robot installed in the vacuum transfer chamber connected to the process chamber, and (c) reading transfer information corresponding to process information applied to the substrate from a memory device in which plural pieces of the process information on a process content of the substrate and plural pieces of the transfer information of the transfer robot corresponding to the plural pieces of the process information are recorded, and controlling the transfer robot to transfer the substrate based on the read transfer information.

Abstract: There is provided a technique that includes: a plurality of process chambers in which substrates are processed; a gas supplier configured to supply a gas to the process chambers; a plurality of process chamber exhaust pipes respectively connected to the plurality of process chambers; a common gas exhaust pipe disposed such that the respective process chamber exhaust pipes join together at downstream sides of the process chamber exhaust pipes; at least one detector configured to detect states of pressures in the process chamber exhaust pipes; and a plurality of inert gas supply pipes respectively connected to the process chamber exhaust pipes and configured to supply an inert gas into the process chamber exhaust pipes.

Abstract: Described herein is a technique capable of exhausting the inner atmosphere of the gas supply pipe of the process vessel while preventing the exhaust gas from accumulating therein. According to one aspect thereof, there is provided a substrate processing system including: process vessels; a gas supply pipe connected to each process vessel; a first exhauster configured to exhaust inner atmospheres of the process vessels; a second exhauster provided separately from the first exhauster and connected to the gas supply pipe through a first switching valve; and a controller enabling to: (a) process the substrate by supplying the process gas through the gas supply pipe to a process vessel among the plurality of the process vessels; and (b) exhaust the process gas from the gas supply pipe to the second exhauster without suppling the process gas from the gas supply pipe to the process vessel.

Abstract: There is provided a technique that include: a process chamber including a plasma generation space and a process space; a coil electrode arranged around the plasma generation space; a substrate mounting table on which a substrate to be processed in the process space is mounted; an elevator configured to move the substrate mounting table in the process chamber; and a controller configured to control the elevator to vary a distance between the substrate and an end portion of the coil electrode according to process distribution information on the substrate.

Abstract: There is provided a technique that include: a process chamber including a plasma generation space and a process space; a coil electrode arranged around the plasma generation space; a substrate mounting table on which a substrate to be processed in the process space is mounted; an elevator configured to move the substrate mounting table in the process chamber; and a controller configured to control the elevator to vary a distance between the substrate and an end portion of the coil electrode according to process distribution information on the substrate.

Abstract: There is provided a technique that includes: a process chamber in which a substrate is processed; a gas supplier configured to supply a gas into the process chamber; at least one substrate mounting table disposed in the process chamber and including a substrate mounting surface on which the substrate is mounted; and an arm configured to transfer the substrate to the substrate mounting surface while supporting a lower surface of the substrate, wherein the arm includes a support that includes an inclination and is configured to support the substrate.