Abstract: A metal interconnect assembly includes a first metal interconnect structure, and a second metal interconnect structure embedded in a second dielectric material layer and containing a metal line portion having a top surface located within a first horizontal plane and having a bottom surface located within a second horizontal plane, and further containing a metal via portion adjoined to a bottom of the metal line portion and contacting a top surface of the first metal interconnect structure. The second metal interconnect structure contains a metallic liner including a first metallic material that includes an entire volume of the metal via portion and an outer part of the metal line portion, and a metallic fill material portion contains a second metallic material that includes an inner part of the metal line portion, does not contact and is spaced from the second dielectric material layer by the metallic liner.

Abstract: A method includes providing a first wafer including a respective set of first metal bonding pads and at least one first alignment diagnostic structure, providing a second wafer including a respective set of second metal bonding pads and a respective set of second alignment diagnostic structures, overlaying the first wafer and the second wafer, measuring at least one of a current, voltage or contact resistance between the first alignment diagnostic structures and the second alignment diagnostic structures to determine an overlay offset, and bonding the second wafer to the first wafer.

Abstract: A three-dimensional memory device includes an alternating stack of insulating layers and electrically conductive layers located over a substrate, memory openings vertically extending through a first region of the alternating stack, memory opening fill structures located in the memory openings, and support pillar structures vertically extending through a second region of the alternating stack. Each of the support pillar structures includes a central columnar structure and a set of fins laterally protruding from the central columnar structure at levels of a subset of the electrically conductive layers.

Abstract: A method includes providing a first wafer including a respective set of first metal bonding pads and at least one first alignment diagnostic structure, providing a second wafer including a respective set of second metal bonding pads and a respective set of second alignment diagnostic structures, overlaying the first wafer and the second wafer, measuring at least one of a current, voltage or contact resistance between the first alignment diagnostic structures and the second alignment diagnostic structures to determine an overlay offset, and bonding the second wafer to the first wafer.

Abstract: A bonded assembly includes a first stack containing a first semiconductor die bonded to a second semiconductor die along a stacking direction, first external bonding pads formed within the first semiconductor die, and bonding connection wires. Each of the bonding connection wires extends over a sidewall of the first semiconductor die and protrudes into the first semiconductor die through the sidewall of the first semiconductor die to contact a respective one of the first external bonding pads.

Abstract: A bonded assembly includes a first stack containing a first semiconductor die bonded to a second semiconductor die along a stacking direction, first external bonding pads formed within the first semiconductor die, and bonding connection wires. Each of the bonding connection wires extends over a sidewall of the first semiconductor die and protrudes into the first semiconductor die through the sidewall of the first semiconductor die to contact a respective one of the first external bonding pads.

Abstract: A bonded structure may be formed by measuring die areas of first semiconductor dies on a wafer at a measurement temperature, generating a two-dimensional map of local target temperatures that are estimated to thermally adjust a die area of each of the first semiconductor dies to a target die area, loading the wafer to a bonding apparatus comprising at least one temperature sensor, and iteratively bonding a plurality of second semiconductor dies to a respective one of the first semiconductor dies by sequentially adjusting a temperature of the wafer to a local target temperature of a respective first semiconductor die that is bonded to a respective one of the second semiconductor dies. An apparatus for forming such a bonded structure may include a computer, a chuck for holding the wafer, a die attachment unit, and a temperature control mechanism.

Abstract: In three-dimensional modeling apparatus, an image obtaining section obtains image sets picked up by stereoscopic camera. A generating section generates three-dimensional models. A three-dimensional model selecting section selects a first three-dimensional model and a second three-dimensional model to be superimposed on the first three-dimensional model among generated three-dimensional models. A extracting section extracts first and second feature points from the selected first and second three-dimensional model. A feature-point selecting section selects feature points having a closer distance to stereoscopic camera from the extracted first and second feature points. A parameter obtaining section obtains a transformation parameter for transforming a coordinate of the second three-dimensional model into a coordinate system of the first three-dimensional model. A transforming section transforms the coordinate of the second three-dimensional model into the coordinate system of the first three-dimensional model.