Patents by Inventor Takashi Yamane

Takashi Yamane has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210359519
    Abstract: A hydrogen-system control device according to the present embodiment is a hydrogen-system control device that controls a hydrogen system. The hydrogen-system control device includes an acquirer configured to acquire a predicted value of the first power for a time period for which an amount of the second power to be received has been set, and a controller configured to cause the hydrogen system to additionally produce hydrogen in an amount corresponding to a usage ratio of surplus power by which a supplied value of the first power exceeds the predicted value of the first power, wherein the controller sets the usage ratio for a first time period within a predetermined time period to a value larger than the usage ratio for a second time period that is after the first time period and within the predetermined time period.
    Type: Application
    Filed: June 11, 2021
    Publication date: November 18, 2021
    Applicant: TOSHIBA ENERGY SYSTEMS & SOLUTIONS CORPORATION
    Inventors: Shingo TAMARU, Takashi AKIBA, Fumiyuki YAMANE, Shin KATO
  • Publication number: 20210357811
    Abstract: A non-transitory computer-readable recording medium has stored therein a program that causes a computer to execute a process, the process including identifying, for an electronic circuit to be analyzed, a resonance frequency of a current and a spatial distribution of the current that flows through the electronic circuit to be analyzed at the resonance frequency, generating a machine learning model using a training data set in which arrangements of circuit elements in respective electronic circuits differ from each other, inputting a value of the identified resonance frequency and information of the identified spatial distribution to the generated machine learning model, and estimating an electromagnetic wave radiation situation of the electronic circuit to be analyzed, based on an output from the machine learning model according to the inputting.
    Type: Application
    Filed: March 29, 2021
    Publication date: November 18, 2021
    Applicant: FUJITSU LIMITED
    Inventors: Hiroaki Yamada, Shohei Yamane, Yoichi Kochibe, Takashi YAMAZAKI, Yusuke Oishi, Toshiyasu OHARA
  • Patent number: 11152186
    Abstract: An object of the present disclosure is to propose a charged particle beam device capable of appropriately evaluating and setting a beam aperture angle. As one aspect for achieving the above-described object, provided is a charged particle beam device which includes a plurality of lenses and controls the plurality of lenses so as to set a focus at a predetermined height of a sample and to adjust the beam aperture angle. The charged particle beam device generates a first signal waveform based on a detection signal obtained by scanning with the beam in a state where the focus is set at a first height that is a bottom portion of a pattern formed on the sample, calculates a feature amount of a signal waveform on a bottom edge of the pattern based on the first signal waveform, and calculates the beam aperture angle based on the calculated feature amount.
    Type: Grant
    Filed: March 15, 2019
    Date of Patent: October 19, 2021
    Assignee: Hitachi High-Tech Corporation
    Inventors: Wataru Yamane, Minoru Yamazaki, Yuko Sasaki, Wataru Mori, Takashi Doi
  • Publication number: 20210305606
    Abstract: A controller according to an embodiment controls a hydrogen system including at least a hydrogen production system in which received power is planned in advance and a hydrogen production amount changes in accordance with the received power. The controller includes: a processor that calculates, in a preparation time period before a demand adjustment time period in which a target value of the received power is set in advance, a control command value such that input power to be inputted as the received power to the hydrogen production system matches the target value at a start of the demand adjustment time period; and a command controller that outputs the control command value calculated by the processor to the hydrogen production system.
    Type: Application
    Filed: June 10, 2021
    Publication date: September 30, 2021
    Applicant: TOSHIBA ENERGY SYSTEMS & SOLUTIONS CORPORATION
    Inventors: Masahiko MURAI, Shingo TAMARU, Takashi AKIBA, Fumiyuki YAMANE, Shin KATO, Hirofumi MORITA, Tetsuharu TANOUE
  • Publication number: 20210305605
    Abstract: A hydrogen-energy control system according to the present embodiment includes a hydrogen energy system, a power grid control system, a hydrogen transport system, and a hydrogen-energy integrated management system configured to control the hydrogen energy system based on information on communication with the power grid control system, wherein the hydrogen-energy integrated management system includes a first communication portion configured to perform communication of at least data of a charge request in charge and discharge requests with the power grid control system, a second communication portion configured to perform communication of hydrogen demand data with the hydrogen transport system, a target hydrogen-amount acquisition portion configured to acquire a target hydrogen-production amount based on the hydrogen demand data, and an operation planning portion configured to create an operation plan in the hydrogen energy system based on the target hydrogen-production amount and the data of the charge request.
    Type: Application
    Filed: June 11, 2021
    Publication date: September 30, 2021
    Applicant: TOSHIBA ENERGY SYSTEMS & SOLUTIONS CORPORATION
    Inventors: Takashi AKIBA, Fumiyuki YAMANE, Shin KATO, Hirofumi MORITA, Tetsuharu TANOUE
  • Publication number: 20210226603
    Abstract: An acoustic wave device includes a piezoelectric body including first and second main surfaces facing each other, an IDT electrode provided on the first main surface of the piezoelectric body and including electrode fingers, a high acoustic velocity member on the second main surface side of the piezoelectric body, in which an acoustic velocity of a propagating bulk wave is higher than an acoustic velocity of an acoustic wave propagating through the piezoelectric body, and a first dielectric film provided on an upper surface of the electrode fingers, in which a portion where a dielectric is not present is provided between the electrode fingers of the IDT electrode.
    Type: Application
    Filed: April 6, 2021
    Publication date: July 22, 2021
    Inventors: Hideki IWAMOTO, Takashi YAMANE, Yasumasa TANIGUCHI, Katsuya DAIMON
  • Patent number: 10886896
    Abstract: An acoustic wave device includes IDT electrodes with different wavelengths determined by electrode finger pitches. A piezoelectric thin film is laminated directly on or indirectly above a high acoustic velocity member. A silicon oxide film is laminated on the piezoelectric thin film, IDT electrodes are laminated on the silicon oxide film. When ? represents a wavelength of one of the IDT electrodes having the shortest wavelength, y represents a wavelength normalized film thickness (%) that is a percentage of a film thickness of the piezoelectric thin film with respect to the wavelength ?, and x represents a wavelength normalized film thickness (%) that is a percentage of a film thickness of the silicon oxide film with respect to the wavelength ?, y is equal to or smaller than about 350% and y<1.6x(?0.01)+0.05x(?0.6)?1 is satisfied.
    Type: Grant
    Filed: August 6, 2019
    Date of Patent: January 5, 2021
    Assignee: MURATA MANUFACTURING CO., LTD.
    Inventor: Takashi Yamane
  • Publication number: 20200303393
    Abstract: A semiconductor memory device according to an embodiment includes a semiconductor substrate; a laminated body formed by laminating a plurality of electrode layers on the semiconductor substrate; a memory film provided in the laminated body and including a first block insulation film disposed in a direction perpendicular to the electrode layer, a charge storage film facing the first block insulation film, a tunnel insulation film facing the charge storage film, and a channel film facing the tunnel insulation film; and a barrier layer provided at at least one of interface between the plurality of electrode layers and the memory film and an interface in the memory film and mainly composed of carbon.
    Type: Application
    Filed: September 12, 2019
    Publication date: September 24, 2020
    Applicant: Toshiba Memory Corporation
    Inventors: Ryota Fujitsuka, Kenta Yamada, Takanori Yamanaka, Takayuki Okada, Hirokazu Ishigaki, Hiroki Kishi, Nobushi Matsuura, Takashi Yamane, Ryota Suzuki
  • Patent number: 10756698
    Abstract: An elastic wave device includes a multilayer film including a piezoelectric thin film laminated on a support substrate. In a region outside a region in which an IDT electrode is provided, the multilayer film is not disposed. A first insulating layer extends from at least a portion of the region to a region on the piezoelectric thin film. A wiring electrode extends to a region on the first insulating layer from a region on the piezoelectric thin film and to extend to a region on a portion of the first insulating layer located in the region. A support layer including a cavity defining a hollow space is provided on the support substrate. The support layer includes, on the wiring electrode, a portion extending from the region to a region above an inner end of the first insulating layer.
    Type: Grant
    Filed: March 29, 2019
    Date of Patent: August 25, 2020
    Assignee: MURATA MANUFACTURING CO., LTD.
    Inventors: Takashi Yamane, Tsutomu Takai, Toru Takeshita
  • Patent number: 10659001
    Abstract: An elastic wave device includes a lamination layer film including a piezoelectric thin film on a support substrate. The lamination layer film is not partially present in a region located in an outer side portion of a region where IDT electrodes are provided. A first insulation layer extends from at least a portion of a region where the lamination layer film is not present to an upper portion of the piezoelectric thin film. A wiring electrode extends from the upper portion of the piezoelectric thin film to an upper portion of the first insulation layer, and extends onto a section of the first insulation layer in the region.
    Type: Grant
    Filed: December 5, 2017
    Date of Patent: May 19, 2020
    Assignee: MURATA MANUFACTURING CO., LTD.
    Inventors: Koji Yamamoto, Tsutomu Takai, Seiji Kai, Hisashi Yamazaki, Yuji Miwa, Takashi Yamane
  • Patent number: 10659002
    Abstract: An elastic wave device includes a lamination layer film including a piezoelectric thin film on a support substrate. The lamination layer film is not partially present in a region located in an outer side portion of a region where IDT electrodes are provided. A first insulation layer extends from at least a portion of a region where the lamination layer film is not present to an upper portion of the piezoelectric thin film. A wiring electrode has a width of about 6 ?m and extends from the upper portion of the piezoelectric thin film to an upper portion of the first insulation layer, and extends onto a section of the first insulation layer in the region.
    Type: Grant
    Filed: August 22, 2018
    Date of Patent: May 19, 2020
    Assignee: MURATA MANUFACTURING CO., LTD.
    Inventors: Koji Yamamoto, Tsutomu Takai, Seiji Kai, Hisashi Yamazaki, Yuji Miwa, Takashi Yamane, Noriyoshi Ota, Atsushi Tanaka
  • Publication number: 20190393856
    Abstract: An acoustic wave device includes a material layer which has Euler angles and an elastic constant at the Euler angles, a piezoelectric body which includes first and second principal surfaces opposing each other, is laminated directly or indirectly on the material layer so that the second principal surface is on the material layer side and has Euler angles, and whose elastic constant at the Euler angles, and an IDT electrode which is disposed on at least one of the first principal surface and the second principal surface of the piezoelectric body. At least one elastic constant among elastic constants C11 to C66 of the material layer not equal to 0 and at least one elastic constant among elastic constants C11 to C66 of the piezoelectric body not equal to 0 have opposite signs to each other.
    Type: Application
    Filed: September 6, 2019
    Publication date: December 26, 2019
    Inventors: Hideki IWAMOTO, Tsutomu TAKAI, Ryo NAKAGAWA, Takashi YAMANE, Masanori OTAGAWA
  • Publication number: 20190393858
    Abstract: An acoustic wave device includes a material layer with Euler angles and an elastic constant at the Euler angles represented by Expression 1, a piezoelectric body including opposing first and second principal surfaces, is laminated directly or indirectly on the material layer and has Euler angles, and whose elastic constant at the Euler angles is represented by the Expression 1 below, and an IDT electrode on at least one of first and second principal surfaces of the piezoelectric body, and in which a wave length determined by an electrode finger pitch is ?.
    Type: Application
    Filed: September 6, 2019
    Publication date: December 26, 2019
    Inventors: Hideki IWAMOTO, Tsutomu TAKAI, Ryo NAKAGAWA, Takashi YAMANE, Masanori OTAGAWA
  • Publication number: 20190363697
    Abstract: An acoustic wave device includes IDT electrodes with different wavelengths determined by electrode finger pitches. A piezoelectric thin film is laminated directly on or indirectly above a high acoustic velocity member. A silicon oxide film is laminated on the piezoelectric thin film, IDT electrodes are laminated on the silicon oxide film. When represents a wavelength of one of the IDT electrodes having the shortest wavelength, y represents a wavelength normalized film thickness (%) that is a percentage of a film thickness of the piezoelectric thin film with respect to the wavelength ?, and x represents a wavelength normalized film thickness (%) that is a percentage of a film thickness of the silicon oxide film with respect to the wavelength ?, y is equal to or smaller than about 350% and y<1.6x(?0.01)+0.05x(?0.6)?1 is satisfied.
    Type: Application
    Filed: August 6, 2019
    Publication date: November 28, 2019
    Inventor: Takashi YAMANE
  • Patent number: 10476471
    Abstract: A composite device includes a silicon substrate including first and second main surfaces on opposite sides, a semiconductor device adjacent to at least one of the first and second main surfaces, and an acoustic wave device including a silicon oxide film directly or indirectly disposed on the first main surface of the silicon substrate, a piezoelectric layer directly disposed on the silicon oxide film, and an IDT disposed on the piezoelectric layer. The piezoelectric layer has a thickness of not greater than about 2.5? where ? is a wavelength defined by an electrode finger pitch of the IDT.
    Type: Grant
    Filed: August 7, 2018
    Date of Patent: November 12, 2019
    Assignee: Murata Manufacturing Co., Ltd.
    Inventors: Yasumasa Taniguchi, Masashi Omura, Takashi Yamane
  • Patent number: 10447240
    Abstract: An elastic wave device includes IDT electrodes stacked on a piezoelectric thin film. The IDT electrode includes a plurality of first electrode fingers and a plurality of second electrode fingers. A line connecting the distal ends of the first electrode fingers or the distal ends of the second electrode fingers extends obliquely with respect to a propagation direction of an elastic wave at an oblique angle ?. The oblique angle ? is about 0.4° or more and about 10° or less.
    Type: Grant
    Filed: June 20, 2016
    Date of Patent: October 15, 2019
    Assignee: MURATA MANUFACTURING CO., LTD.
    Inventors: Takashi Yamane, Hideki Iwamoto, Keiji Okada, Syunsuke Kido, Masanori Otagawa, Ippei Hatsuda, Korekiyo Ito
  • Publication number: 20190305748
    Abstract: An elastic wave device includes a multilayer film including a piezoelectric thin film laminated on a support substrate. In a region outside a region in which an IDT electrode is provided, the multilayer film is not disposed. A first insulating layer extends from at least a portion of the region to a region on the piezoelectric thin film. A wiring electrode extends to a region on the first insulating layer from a region on the piezoelectric thin film and to extend to a region on a portion of the first insulating layer located in the region. A support layer including a cavity defining a hollow space is provided on the support substrate. The support layer includes, on the wiring electrode, a portion extending from the region to a region above an inner end of the first insulating layer.
    Type: Application
    Filed: March 29, 2019
    Publication date: October 3, 2019
    Inventors: Takashi YAMANE, Tsutomu TAKAI, Toru TAKESHITA
  • Publication number: 20190288667
    Abstract: An elastic wave device includes a spacer layer on or above a support substrate and outside a piezoelectric film as seen in a plan view from a thickness direction of the support substrate. A cover layer is disposed on the spacer layer. A through electrode extends through the spacer layer and the cover layer and is electrically connected to the wiring electrode. The wiring electrode includes a first section overlapping the through electrode as seen in the plan view from the thickness direction, a second section overlapping the piezoelectric film as seen in the plan view from the thickness direction, and a step portion defining a step in the thickness direction between the first section and the second section. The spacer layer includes an end portion embedded in the cover layer.
    Type: Application
    Filed: February 13, 2019
    Publication date: September 19, 2019
    Inventors: Yasunobu HAYASHI, Takashi YAMANE
  • Patent number: 10256793
    Abstract: An elastic wave device includes a piezoelectric film and a high acoustic velocity member in which an acoustic velocity of a bulk wave propagating in the high acoustic velocity member is larger than an acoustic velocity of a main mode elastic wave propagating in the piezoelectric film, the piezoelectric film that is directly or indirectly laminated on the high acoustic velocity member, a first conductive film provided on the piezoelectric film, and a second conductive film that is provided on the piezoelectric film and on at least a portion of the first conductive film. A plurality of IDT electrodes including electrode fingers and busbars are provided on the piezoelectric film, at least electrode fingers of a plurality of IDT electrodes are defined by the first conductive film, and at least a portion of connection wiring with which the plurality of IDT electrodes are connected to each other is defined the second conductive film.
    Type: Grant
    Filed: May 16, 2017
    Date of Patent: April 9, 2019
    Assignee: MURATA MANUFACTURING CO., LTD.
    Inventors: Yuichi Takamine, Takashi Yamane
  • Publication number: 20190097599
    Abstract: A composite device includes a silicon substrate including first and second main surfaces on opposite sides, a semiconductor device adjacent to at least one of the first and second main surfaces, and an acoustic wave device including a silicon oxide film directly or indirectly disposed on the first main surface of the silicon substrate, a piezoelectric layer directly disposed on the silicon oxide film, and an IDT disposed on the piezoelectric layer. The piezoelectric layer has a thickness of not greater than about 2.5? where ? is a wavelength defined by an electrode finger pitch of the IDT.
    Type: Application
    Filed: August 7, 2018
    Publication date: March 28, 2019
    Inventors: Yasumasa TANIGUCHI, Masashi OMURA, Takashi YAMANE