Abstract: A semiconductor device of which manufacturing steps can be simplified by doping impurities at a time, and a manufacturing method thereof.

Abstract: It is an object of the present invention to enhance a selection ratio in an etching process, and provide a method for manufacturing a semiconductor device that has favorable uniform characteristics with high yield. In a method for manufacturing a semiconductor device according to the present invention, a first layer is formed over a substrate, second layer is formed on the first layer, the first layer and the second layer are etched to form a first pattern, and the second layer in the first pattern is selectively etched with plasma of boron trichloride, chlorine, and oxygen using ECR (Electron Cyclotron Resonance) or ICP (Inductively Coupled Plasma) to form a second pattern.

Abstract: A light-emitting device, which has a structure that improves an opening ratio and light extraction efficiency, can solve a problem of an etching residue occurred during forming the device itself, and reduce deterioration due to poor coverage and short-circuiting to improve greatly the reliability, and a method for manufacturing the light-emitting device. In the light-emitting device having a structure that improves light extraction efficiency, a material used for forming a first electrode is Ti/TiN/Al (or Al—Ti)/Ti (or TiN).

Abstract: In performing an anisotropic etching process after a taper etching process of a gate conductive layer of a two-layer or three-layer laminated structure, a portion that is not etched is left at an edge of a second conductive film to shorten an LDD region. It is an object to make the LDD region longer by reducing or removing the left portion that is not etched. After a taper etching process of a gate conductive layer of a two-layer or three-layer laminated structure, an argon plasma treatment is performed. With this argon plasma treatment, a reactive organism in the taper etching process is removed, and it becomes possible to reduce or remove the left portion that is not etched in the anisotropic etching to be performed next.

Abstract: With respect to the selective ratio in the etching process, it is an object to give design freedom in size of an LDD overlapped with a gate electrode, which is formed in a self-aligning manner, by performing an etching process under an etching condition that has a high selective ratio between a mask pattern and metal such as titanium in forming a first conductive layer pattern.

Abstract: A semiconductor device of which manufacturing steps can be simplified by doping impurities at a time, and a manufacturing method thereof.

Abstract: A semiconductor device of which manufacturing steps can be simplified by doping impurities at a time, and a manufacturing method thereof.

Abstract: It is an object of the present invention to enhance a selection ratio in an etching process, and provide a method for manufacturing a semiconductor device that has favorable uniform characteristic with high yield. In a method for manufacturing a semiconductor device according to the present invention, a semiconductor layer is formed, a gate insulating film is formed on the semiconductor film, a first conductive layer is formed on the gate insulating film, a second conductive layer is formed on the first conductive layer, the first conductive layer and the second conductive layer are etched to form a first conductive-layer pattern, the second conductive layer in the first conductive-layer pattern is selectively etched with plasma of boron trichloride, chlorine, and oxygen to form a second conductive-layer pattern, and a first impurity region and a second impurity region are formed in the semiconductor layer.

Abstract: It is an object of the present invention to enhance a selection ratio in an etching process, and provide a method for manufacturing a semiconductor device that has favorable uniform characteristics with high yield. In a method for manufacturing a semiconductor device according to the present invention, a semiconductor layer is formed, a gate insulating film is formed on the semiconductor film, a first conductive layer is formed on the gate insulating film, a second conductive layer is formed on the first conductive layer, the first conductive: layer and the second conductive layer are etched to form a first conductive-layer pattern, the second conductive layer in the first conductive-layer pattern is selectively etched with plasma of boron trichloride, chlorine, and oxygen to form a second conductive-layer pattern, and a first impurity region and a second impurity region are formed in the semiconductor layer.

Abstract: With respect to the selective ratio in the etching process, it is an object to give design freedom in size of an LDD overlapped with a gate electrode, which is formed in a self-aligning manner, by performing an etching process under an etching condition that has a high selective ratio between a mask pattern and metal such as titanium in forming a first conductive layer pattern.

Abstract: With respect to the selective ratio in the etching process, it is an object to give design freedom in size of an LDD overlapped with a gate electrode, which is formed in a self-aligning manner, by performing an etching process under an etching condition that has a high selective ratio between a mask pattern and metal such as titanium in forming a first conductive layer pattern.

Abstract: A light-emitting device, which has a structure that improves an opening ratio and light extraction efficiency, can solve a problem of an etching residue occurred during forming the device itself, and reduce deterioration due to poor coverage and short-circuiting to improve greatly the reliability, and a method for manufacturing the light-emitting device. In the light-emitting device having a structure that improves light extraction efficiency, a material used for forming a first electrode is Ti/TiN/Al (or Al—Ti)/Ti (or TiN).

Abstract: A light-emitting device, which has a structure that improves an opening ratio and light extraction efficiency, can solve a problem of an etching residue occurred during forming the device itself, and reduce deterioration due to poor coverage and short-circuiting to improve greatly the reliability, and a method for manufacturing the light-emitting device. In the light-emitting device having a structure that improves light extraction efficiency, a material used for forming a first electrode is Ti/TiN/Al (or Al—Ti)/Ti (or TiN).

Abstract: [Object] In performing an anisotropic etching process after a taper etching process of a gate conductive layer of a two-layer or three-layer laminated structure, a portion that is not etched is left at an edge of a second conductive film to shorten an LDD region. It is an object to make the LDD region longer by reducing or removing the left portion that is not etched. [Solving Means] After a taper etching process of a gate conductive layer of a two-layer or three-layer laminated structure, an argon plasma treatment is performed. With this argon plasma treatment, a reactive organism in the taper etching process is removed, and it becomes possible to reduce or remove the left portion that is not etched in the anisotropic etching to be performed next.

Abstract: A semiconductor device of which manufacturing steps can be simplified by doping impurities at a time, and a manufacturing method thereof.

Abstract: With respect to the selective ratio in the etching process, it is an object to give design freedom in size of an LDD overlapped with a gate electrode, which is formed in a self-aligning manner, by performing an etching process under an etching condition that has a high selective ratio between a mask pattern and metal such as titanium in forming a first conductive layer pattern.

Abstract: It is an object of the present invention to enhance a selection ratio in an etching process, and provide a method for manufacturing a semiconductor device that has favorable uniform characteristics with high yield.

Abstract: A light-emitting device, which has a structure that improves an opening ratio and light extraction efficiency, can solve a problem of an etching residue occurred during forming the device itself, and reduce deterioration due to poor coverage and short-circuiting to improve greatly the reliability, and a method for manufacturing the light-emitting device. In the light-emitting device having a structure that improves light extraction efficiency, a material used for forming a first electrode is Ti/TiN/Al (or Al—Ti)/Ti (or TiN).