Patents by Inventor Takashi Yoshimura

Takashi Yoshimura has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240240070
    Abstract: An object is to suppress disproportionation in a refrigerant comprising HFO-1132(E) when the refrigerant has a pressure of 3.0 MPa. A composition comprising a refrigerant, the refrigerant comprising trans-1,2-difluoroethylene (HFO-1132(E)), trifluoroethylene (HFO-1123), and tetrafluoropropene in a total amount of 99.5 mass % or more based on the entire refrigerant, wherein when the mass % of HFO-1132(E), HFO-1123, and tetrafluoropropene based on their sum is respectively represented by x, y, and z, coordinates (x, y, z) in a ternary composition diagram in which the sum of HFO-1132(E), HFO-1123, and tetrafluoropropene is 100 mass % are within the range of a figure surrounded by straight lines AB, BO, and OA that connect the following 3 points: point A (44.0, 0.0, 56.0), point B (0.0, 56.0, 44.0), and point O (0.0, 0.0, 100.0), or on the above straight line AB (excluding the points A and B).
    Type: Application
    Filed: March 28, 2024
    Publication date: July 18, 2024
    Applicant: DAIKIN INDUSTRIES, LTD.
    Inventors: Mitsushi Itano, Satoshi Tokuno, Tomoyuki Gotou, Takashi Yoshimura, Takashi Usui, Tsubasa Nakaue
  • Publication number: 20240228852
    Abstract: An object is to provide a novel low-GWP mixed refrigerant. As a solution thereof, provided is a composition comprising a refrigerant, the refrigerant comprising HFO-1123 and HFO-1234yf, wherein the total content of HFO-1123 and HFO-1234yf is 99.5 mass % or more based on the entire refrigerant, and the content of HFO-1123 is 42.5 to 46.1 mass % and the content of HFO-1234yf is 53.9 to 57.5 mass % based on the sum of HFO-1123 and HFO-1234yf.
    Type: Application
    Filed: March 25, 2024
    Publication date: July 11, 2024
    Applicant: DAIKIN INDUSTRIES, LTD.
    Inventors: Mitsushi ITANO, Satoshi TOKUNO, Tomoyuki GOTOU, Takashi USUI, Takashi YOSHIMURA
  • Patent number: 12015058
    Abstract: A device includes a substrate with upper/lower surfaces, including hydrogen containing region having hydrogen chemical concentration peaks in a depth direction. A carrier concentration distribution of the hydrogen containing region includes a first carrier concentration peak, a second carrier concentration peak closest to the first carrier concentration peak, a third carrier concentration peak arranged closer to the upper surface than the second carrier concentration peak, a first inter peak region arranged between the first and second carrier concentration peaks, a second inter peak region arranged between the second and third carrier concentration peaks, and an inter-peaks concentration peak arranged in the second inter peak region such that the concentration peak does not overlap the hydrogen chemical concentration peaks in the second and third carrier concentration peaks. A local minimum value of a carrier concentration in the first inter peak region is smaller than that of the second inter peak region.
    Type: Grant
    Filed: June 13, 2023
    Date of Patent: June 18, 2024
    Assignee: FUJI ELECTRIC CO., LTD.
    Inventors: Yoshiharu Kato, Toru Ajiki, Tohru Shirakawa, Misaki Takahashi, Kaname Mitsuzuka, Takashi Yoshimura, Yuichi Onozawa, Hiroshi Takishita, Soichi Yoshida
  • Publication number: 20240162287
    Abstract: Provided is a semiconductor device comprising: a drift region of a first conductivity type which is provided in a semiconductor substrate having a front surface and a back surface; and a back surface side region of the first conductivity type or a second conductivity type which is provided on a back surface side of the semiconductor substrate relative to the drift region in the semiconductor substrate and has a higher atomic density than the drift region.
    Type: Application
    Filed: January 22, 2024
    Publication date: May 16, 2024
    Inventors: Yasunori AGATA, Takashi YOSHIMURA
  • Publication number: 20240162284
    Abstract: A manufacturing method of a semiconductor device including a buffer region in a semiconductor substrate is provided, comprising: obtaining a substrate concentration index related to at least one of an oxygen chemical concentration or a carbon chemical concentration included in the semiconductor substrate; classifying the substrate concentration index as any index range among a predetermined plurality of index ranges; determining an acceleration energy of hydrogen ions to be implanted into the semiconductor substrate to an acceleration energy that is preset to correspond to the classified index range; and forming a buffer region of the semiconductor device by implanting hydrogen ions into the semiconductor substrate with the determined acceleration energy.
    Type: Application
    Filed: September 21, 2023
    Publication date: May 16, 2024
    Inventors: Hiroshi TAKISHITA, Yuusuke OOSHIMA, Takashi YOSHIMURA, Shuntaro YAGUCHI
  • Patent number: 11984482
    Abstract: Provided is a semiconductor device including a buffer region. Provided is a semiconductor device including: semiconductor substrate of a first conductivity type; a drift layer of the first conductivity type provided in the semiconductor substrate; and a buffer region of the first conductivity type provided in the drift layer, the buffer region having a plurality of peaks of a doping concentration, wherein the buffer region has: a first peak which has a predetermined doping concentration, and is provided the closest to a back surface of the semiconductor substrate among the plurality of peaks; and a high-concentration peak which has a higher doping concentration than the first peak, and is provided closer to an upper surface of the semiconductor substrate than the first peak is.
    Type: Grant
    Filed: October 22, 2020
    Date of Patent: May 14, 2024
    Assignee: FUJI ELECTRIC CO., LTD.
    Inventors: Yasunori Agata, Takashi Yoshimura, Hiroshi Takishita
  • Publication number: 20240153829
    Abstract: Provided is a method for manufacturing a semiconductor device, wherein the method: obtains correlated information indicating relationship between a process condition under which a doping region is formed and a defect evaluation value of the doping region; forms the doping region in a substrate for evaluation under a set first process condition; obtains a measurement value of the defect evaluation value of the substrate for evaluation in which the doping region has been formed; obtains, in the correlated information, the defect evaluation value corresponding to the first process condition as a reference value, and compares the measurement value of the defect evaluation value with the reference value; and adjusts the process condition in a process of manufacturing the semiconductor device by using the substrate for manufacture.
    Type: Application
    Filed: October 24, 2023
    Publication date: May 9, 2024
    Inventors: Yuusuke OOSHIMA, Takashi YOSHIMURA, Hiroshi TAKISHITA, Shuntaro YAGUCHI
  • Patent number: 11972950
    Abstract: There is provided a semiconductor device, a hydrogen concentration distribution has a hydrogen concentration peak, a helium concentration distribution has a helium concentration peak, and a donor concentration distribution has a first donor concentration peak and a second donor concentration peak; the hydrogen concentration peak and the first donor concentration peak are located at a first depth, and the helium concentration peak and the second donor concentration peak are located at a second depth; each concentration peak has an upward slope; and a value which is obtained by normalizing a gradient of the upward slope of the second donor concentration peak by a gradient of the upward slope of the helium concentration peak is smaller than a value which is obtained by normalizing a gradient of the upward slope of the first donor concentration peak by a gradient of the upward slope of the hydrogen concentration peak.
    Type: Grant
    Filed: November 30, 2020
    Date of Patent: April 30, 2024
    Assignee: FUJI ELECTRIC CO., LTD.
    Inventors: Misaki Meguro, Takashi Yoshimura, Hiroshi Takishita, Naoko Kodama, Yasunori Agata
  • Patent number: 11935945
    Abstract: Provided is a semiconductor device, comprising: a semiconductor substrate having an upper surface, a lower surface, and a center position equidistant from the upper surface and the lower surface in a depth direction of the semiconductor substrate. An N-type region with an N-type conductivity is provided in the semiconductor substrate such that the N-type region includes the center position of the semiconductor substrate. The N-type region includes an acceptor with a concentration that is a lower concentration than a carrier concentration, and is 0.001 times or more of a carrier concentration at the center position of the semiconductor substrate.
    Type: Grant
    Filed: April 21, 2021
    Date of Patent: March 19, 2024
    Assignee: FUJI ELECTRIC CO., LTD.
    Inventors: Hiroshi Takishita, Takashi Yoshimura, Misaki Meguro, Michio Nemoto
  • Publication number: 20240055506
    Abstract: To provide a manufacturing method of a semiconductor device including forming a lifetime control region from the side of a front surface of a semiconductor substrate, ion-implanting Ti into a bottom surface of a contact hole provided so as to penetrate through an interlayer dielectric film arranged on the front surface of the semiconductor substrate, and forming a Ti silicide layer at the bottom surface of the contact hole with anneal.
    Type: Application
    Filed: October 23, 2023
    Publication date: February 15, 2024
    Inventors: Takashi YOSHIMURA, Makoto SHIMOSAWA, Motoyoshi KUBOUCHI, Misaki UCHIDA
  • Publication number: 20240043728
    Abstract: The present disclosure aims to provide a novel refrigerant comprising HFO-1132(E).
    Type: Application
    Filed: July 27, 2023
    Publication date: February 8, 2024
    Applicant: DAIKIN INDUSTRIES, LTD.
    Inventors: Mitsushi ITANO, Shun OHKUBO, Satoshi TOKUNO, Tomoyuki GOTOU, Takashi YOSHIMURA, Takashi USUI, Tatsumi TSUCHIYA, Tsubasa NAKAUE
  • Publication number: 20240047535
    Abstract: A semiconductor device, including a semiconductor substrate having a transistor portion and a diode portion, a drift region of a first conductivity type provided in the semiconductor substrate, a first electrode provided on one main surface side of the semiconductor substrate, and a second electrode provided on another main surface side of the semiconductor substrate, is provided. The diode portion includes a high concentration region and a crystalline defect region. The high concentration region has a higher doping concentration than the drift region and includes hydrogen. The doping concentration of the high concentration region at a peak position in a depth direction of the semiconductor substrate is equal to or less than 1.0×1015/cm3. The crystalline defect region is provided on the one main surface side of the semiconductor substrate relative to the peak position, has a higher crystalline defect density than the drift region, and includes hydrogen.
    Type: Application
    Filed: October 12, 2023
    Publication date: February 8, 2024
    Inventors: Takashi YOSHIMURA, Yuichi ONOZAWA, Hiroshi TAKISHITA, Misaki MEGURO, Motoyoshi KUBOUCHI, Naoko KODAMA
  • Publication number: 20240043605
    Abstract: Provided is a curable composition that can form a lens having excellent visibility, antiglare effects, and contrast-enhancing effects by suppressing thermal degradation of a tetraazaporphyrin compound. The curable composition according to the present disclosure includes silsesquioxane containing a cyclohexene oxide group, and a tetraazaporphyrin compound having an absorption peak in a wavelength region of from 570 to 605 nm, in which a content of the tetraazaporphyrin compound is from 1000 to 10000 ppm by weight of a content of the silsesquioxane.
    Type: Application
    Filed: January 20, 2022
    Publication date: February 8, 2024
    Applicant: DAICEL CORPORATION
    Inventors: Akihiro SHIBAMOTO, Takashi YOSHIMURA, Yukio ASAI
  • Publication number: 20240030322
    Abstract: A manufacturing method of a semiconductor apparatus including: setting, depending on a distribution of the carrier concentrations that the buffer region should have, a dose amount of hydrogen ions to be implanted into a plurality of depth positions corresponding to the plurality of concentration peaks; and implanting, depending on the dose amount that is set in the setting, the hydrogen ions into the semiconductor substrate is provided. In the setting, among the plurality of concentration peaks, the dose amount of the hydrogen ions for a deepest peak farthest from the lower surface of the semiconductor substrate is set depending on a carbon concentration of the semiconductor substrate, and the dose amount for at least one of the concentration peaks other than the deepest peak is set regardless of the carbon concentration of the semiconductor substrate.
    Type: Application
    Filed: June 18, 2023
    Publication date: January 25, 2024
    Inventors: Hidenori TSUJI, Katsunori UENO, Shinya TAKASHIMA, Takashi YOSHIMURA
  • Publication number: 20240010896
    Abstract: An object is to suppress disproportionation in a refrigerant comprising HFO-1132(E). Provided as a means for a solution is a method for suppressing a disproportionation reaction of HFO-1132(E), the method comprising operating a refrigeration cycle using a composition comprising a refrigerant, the refrigerant comprising trans-1,2-difluoroethylene (HFO-1132(E)), trifluoroethylene (HFO-1123), and difluoromethane (R32).
    Type: Application
    Filed: September 8, 2023
    Publication date: January 11, 2024
    Applicant: DAIKIN INDUSTRIES, LTD.
    Inventors: Mitsushi ITANO, Shun OHKUBO, Satoshi TOKUNO, Tomoyuki GOTOU, Takashi USUI, Takashi YOSHIMURA
  • Publication number: 20230416580
    Abstract: Damages to a refrigerant circuit of a refrigeration cycle apparatus due to a disproportionation reaction are suppressed. The use of a composition as a refrigerant in a compressor is use of, as a refrigerant, a composition containing one or two or more compounds selected from a group consisting of ethylene-based fluoroolefin, 2,3,3,3-Tetrafluoropropene (HFO-1234yf), and 1,3,3,3-Tetrafluoropropene (HFO-1234ze) in a compressor that includes a terminal (200) including a terminal pin (220) and a body (210) to which the terminal pin (220) is fixed, and the terminal pin (220) is fixed to the body (210) with a fixing adhesive (240) having a melting point or a softening point of 1000° C. or less.
    Type: Application
    Filed: August 25, 2023
    Publication date: December 28, 2023
    Applicant: DAIKIN INDUSTRIES, LTD.
    Inventors: Yuuko ITOU, Tomoyuki GOTO, Takashi YOSHIMURA, Takashi USUI
  • Publication number: 20230402511
    Abstract: Provided is a semiconductor device including a drift region, a buffer region which is provided in a back surface side of a semiconductor substrate relative to the drift region and has a first peak of a doping concentration, and a first lattice defect region which is provided in a front surface side of the semiconductor substrate relative to the first peak in a depth direction of the semiconductor substrate, in which the buffer region has a hydrogen peak which is provided in the front surface side of the semiconductor substrate relative to the first lattice defect region, and an integrated concentration obtained by integrating the doping concentration in a direction from an upper end of the drift region to the hydrogen peak in the depth direction of the semiconductor substrate is equal to or larger than a critical integrated concentration.
    Type: Application
    Filed: August 25, 2023
    Publication date: December 14, 2023
    Inventors: Motoyoshi KUBOUCHI, Takashi YOSHIMURA, Yuki SAWA, Shogo YAMAGUCHI
  • Patent number: 11824095
    Abstract: Provided is a semiconductor device including a semiconductor substrate; a hydrogen donor that is provide inside the semiconductor substrate in a depth direction, has a doping concentration that is higher than a doping concentration of a dopant of the semiconductor substrate, has a doping concentration distribution peak at a first position that is a predetermined distance in the depth direction of the semiconductor substrate away from one main surface of the semiconductor substrate, and has a tail of the doping concentration distribution where the doping concentration is lower than at the peak, farther on the one main surface side than where the first position is located; and a crystalline defect region having a crystalline defect density center peak at a position shallower than the first position, in the depth direction of the semiconductor substrate.
    Type: Grant
    Filed: January 17, 2022
    Date of Patent: November 21, 2023
    Assignee: FUJI ELECTRIC CO., LTD.
    Inventors: Takashi Yoshimura, Yuichi Onozawa, Hiroshi Takishita, Misaki Meguro, Motoyoshi Kubouchi, Naoko Kodama
  • Publication number: 20230360915
    Abstract: A semiconductor device including a semiconductor substrate having an upper surface and a lower surface is provided. In a depth direction connecting the upper and lower surfaces of the semiconductor substrate, a donor concentration distribution includes a first donor concentration peak at a first depth, a second donor concentration peak at a second depth between the first donor concentration peak and the upper surface, a flat region between the first donor concentration peak and the second donor concentration peak, and a plurality of donor concentration peaks between the first donor concentration peak and the lower surface. The second donor concentration peak has a lower concentration than the first donor concentration peak. The donor concentration distribution in the flat region is substantially flat. The thickness of the flat region in the depth direction is 10% or more of the thickness of the semiconductor substrate.
    Type: Application
    Filed: July 20, 2023
    Publication date: November 9, 2023
    Inventors: Yasunori AGATA, Takashi YOSHIMURA, Hiroshi TAKISHITA, Misaki MEGURO, Naoko KODAMA, Yoshihiro IKURA, Seiji NOGUCHI, Yuichi HARADA, Yosuke SAKURAI
  • Patent number: 11803068
    Abstract: An object of the present invention is to provide a thin and lightweight polarizing lens for use in lightweight sunglasses (in particular, rimless sunglasses) while maintaining the clamping force and mechanical strength of a temple part, and a manufacturing method therefor. The values of: the center thickness v of a polarizing lens A including an injection-molded layer 3 laminated on at least one surface of a polarizing sheet B, the injection-molded layer having a polyamide-based resin; and the flexural modulus of the injection-molded layer 3 are adjusted, thus the predetermined clamping force and mechanical strength of a temple part are obtained even in the case of sunglasses with the thin and lightweight polarizing lens.
    Type: Grant
    Filed: December 11, 2019
    Date of Patent: October 31, 2023
    Assignee: DAICEL ABOSHI SANGYO CO., LTD.
    Inventor: Takashi Yoshimura