Abstract: A region for adjusting a carrier lifetime is easily formed by a method in which damage to a predetermined surface of a semiconductor substrate is small. Provided is a semiconductor apparatus including: a semiconductor substrate having an upper surface and a lower surface; a first region provided in a region on an upper surface side of the semiconductor substrate and having a first chemical concentration peak of a first impurity at a first depth position; and a second region provided in a region different from the first region in the semiconductor substrate and having a second chemical concentration peak of the first impurity at the first depth position. At the first depth position, a concentration of a recombination center of the second region is lower than a concentration of the recombination centers of the first region.

Abstract: A semiconductor device comprising a semiconductor substrate including an upper surface and a lower surface wherein a donor concentration of a drift region is higher than a base doping concentration of the semiconductor substrate, entirely over the drift region in a depth direction connecting the upper surface and the lower surface is provided.

Abstract: Provided is a semiconductor device, comprising a semiconductor substrate with an upper surface and a lower surface, wherein: the semiconductor substrate has one or more hydrogen peaks, which are peaks of hydrogen chemical concentration, in a depth direction, and the one or more hydrogen peaks include a deepest peak furthest away from the lower surface of the semiconductor substrate; the semiconductor substrate has a lower region from the lower surface to the deepest peak, and an upper region arranged from the deepest peak to the upper surface; and for at least one of a carbon chemical concentration or an oxygen chemical concentration, a concentration in the lower region is twice or more of a concentration of the upper region.

Abstract: Provided is a semiconductor device having a semiconductor substrate with the oxygen chemical concentration of 1×1016 atoms/cm3 or more, wherein it includes the bulk donor and an increased donor, includes a buffer region of a first conductivity type that has a doping concentration higher than that of the drift region, and has a concentration of the thermal donor that is 10% or less of a concentration of the increased donor at a same depth position throughout an entire first range from a lower end of the buffer region to the deepest peak.

Abstract: Provided is a semiconductor device comprising: a semiconductor substrate provided with a drift region; a buffer region arranged between the drift region and the lower surface, wherein a doping concentration distribution has three or more concentration peaks; and a collector region arranged between the buffer region and the lower surface, wherein the three or more concentration peaks in the buffer region include: a first concentration peak closest to the lower surface; a second concentration peak closest, next to the first concentration peak, to the lower surface, arranged 5 ?m or more distant from the lower surface in the depth direction, and having a doping concentration lower than the first concentration peak, the doping concentration being less than 1.0×1015/cm3; and a high concentration peak arranged farther from the lower surface than the second concentration peak, and having a higher doping concentration than the second concentration peak.

Abstract: Provided is a semiconductor device, including a semiconductor substrate having an upper surface and a lower surface and including a bulk donor, wherein a hydrogen chemical concentration distribution of the semiconductor substrate in a depth direction is flat, monotonically increasing, or monotonically decreasing from the lower surface to the upper surface except for a portion where a local hydrogen concentration peak is provided; and a donor concentration of the semiconductor substrate is higher than a bulk donor concentration over an entire region from the upper surface to the lower surface. Hydrogen ions may be irradiated from the upper surface or the lower surface of the semiconductor substrate so as to penetrate the semiconductor substrate in the depth direction.

Abstract: Provided is a semiconductor device comprising a semiconductor substrate having an upper surface and a lower surface, with a bulk donor distributed between the upper surface and the lower surface, that has a drift region of a first conductivity type provided thereon, the semiconductor device comprising a high-concentration region of a first conductivity type that is arranged between the drift region and the lower surface of the semiconductor substrate, includes a hydrogen donor, and has a carrier concentration that is higher than a bulk donor concentration, wherein the high-concentration region has a first portion in which a hydrogen donor concentration obtained by subtracting a bulk donor concentration from a carrier concentration is 7×1013/cm3 or more and 1.5×1014/cm3 or less, and a length of the first portion in a depth direction of the semiconductor substrate is 50% or more of a length of the high-concentration region.

Abstract: A semiconductor apparatus includes a flat portion disposed in a predetermined region containing a central depth position of a semiconductor substrate, between a fist peak disposed in an upper surface side of the semiconductor substrate and a second peak disposed in a lower surface side of the semiconductor substrate, and having a substantially flat concentration higher than a bulk donor concentration in a donor concentration distribution in a depth direction of a semiconductor substrate. The entire oxygen chemical concentration between the first peak and the second peak ranges from 3×1015 atoms/cm3 to 2×1018 atoms/cm3.

Abstract: A p-type semiconductor region is formed in a front surface side of an n-type semiconductor substrate. An n-type field stop (FS) region including protons as a donor is formed in a rear surface side of the semiconductor substrate. A concentration distribution of the donors in the FS region include first, second, third and fourth peaks in order from a front surface to the rear surface. Each of the peaks has a peak maximum point, and peak end points formed at both sides of the peak maximum point. The peak maximum points of the first and second peaks are higher than the peak maximum point of the third peak. The peak maximum point of the third peak is lower than the peak maximum point of the fourth peak.

Abstract: A semiconductor device including a semiconductor substrate having an upper surface and a lower surface is provided. In a depth direction connecting the upper and lower surfaces of the semiconductor substrate, a donor concentration distribution includes a first donor concentration peak at a first depth, a second donor concentration peak at a second depth between the first donor concentration peak and the upper surface, a flat region between the first donor concentration peak and the second donor concentration peak, and a plurality of donor concentration peaks between the first donor concentration peak and the lower surface. The second donor concentration peak has a lower concentration than the first donor concentration peak. The donor concentration distribution in the flat region is substantially flat. The thickness of the flat region in the depth direction is 10% or more of the thickness of the semiconductor substrate.

Abstract: A display device is capable of displaying an aerial image using retroreflection. The display device includes a light source, a three-dimensional object having at least one optical characteristic of light guiding or light diffusion and being illuminated by the light source, a retroreflective member configured to reflect light of the three-dimensional object, and an optical member that transmits the light reflected by the retroreflective member to form an aerial image of the three-dimensional object. The three-dimensional object includes at least an upper surface and one or more side surfaces connected to the upper surface, where at least part of the one or more side surfaces is tapered.

Abstract: Provided is a semiconductor device comprising: a semiconductor substrate; a plurality of peaks of a doping concentration provided on a back surface of the semiconductor substrate; and a flat part, with a doping concentration more than or equal to 2.5 times a substrate concentration of the semiconductor substrate, provided between the plurality of peaks in a depth direction of the semiconductor substrate, wherein at least one of the plurality of peaks is a first peak provided on a front surface side relative to the flat part, wherein a doping concentration of the first peak is less than or equal to twice the doping concentration of the flat part.

Abstract: A workpiece supporting device (6) includes a base stand (10), a shoe (11) which is disposed on at least one place in a circumferential direction of a workpiece (1a) that is rotationally driven using a rotary drive device (4) and is in sliding contact with a circumferential surface of the workpiece (1a), and a supporting body (12) which supports the shoe (11) with respect to the base stand (10). The supporting body (12) includes a compliant structure portion (a leaf spring (14)) which tilts the shoe (11) in accordance with tilting of the workpiece (1a) with respect to the base stand (10).

Abstract: Provided is a semiconductor apparatus including: a first peak of a hydrogen chemical concentration disposed on the lower surface side of the semiconductor substrate; and a flat portion disposed on the upper surface side of the semiconductor substrate with respect to the first peak, containing a hydrogen donor, and having a substantially (almost) flat donor concentration distribution in a depth direction. An oxygen contribution ratio indicating a ratio of an oxygen chemical concentration contributing to generation of the hydrogen donor in the oxygen chemical concentration of the oxygen ranges from 1×10?5 to 7×10?4. A concentration of the oxygen contributing to generation of the hydrogen donor in the flat portion is lower than the hydrogen chemical concentration. A hydrogen donor concentration in the flat portion ranges from 2×1012/cm3 to 5×1014/cm3.

Abstract: Provided is a method for manufacturing a semiconductor device, the method including: forming an interlayer dielectric film having a contact hole above the semiconductor substrate; forming an initial metal film containing a predetermined first metal on an upper surface of the semiconductor substrate and on side walls of the interlayer dielectric film; forming a first alloy layer containing the first metal on the upper surface of the semiconductor substrate; forming a first barrier metal portion containing the first metal on the side walls of the interlayer dielectric film; etching at least one of the initial metal film or the first barrier metal portion; forming an oxide layer on an upper surface of the first alloy layer; etching the oxide layer; forming a second barrier metal portion, which is conductive, above the first alloy layer; and forming a plug layer above the second barrier metal portion.

Abstract: Provided is a semiconductor device comprising: a semiconductor substrate; an interlayer dielectric film that has a contact hole and is provided above the semiconductor substrate; a first alloy layer provided on an upper surface of the semiconductor substrate below the contact hole; an oxide layer provided on an upper surface of the first alloy layer in the contact hole; a barrier metal layer that is conductive and provided above the oxide layer in the contact hole; and a plug layer provided above the barrier metal layer in the contact hole.

Abstract: A semiconductor device includes a semiconductor substrate with an upper surface and a lower surface, including an n-type semiconductor region having a hydrogen containing region. A carrier concentration distribution representing a carrier concentration by a semi-logarithmic graph in the depth direction of the n-type semiconductor region includes a flat portion containing a first flat part and a second flat part located closer to the lower surface of the semiconductor substrate than the first plat part, and a slope located between the first flat part and the second flat part.

Abstract: Provided is a novel low-GWP mixed refrigerant. A composition comprising a refrigerant, the refrigerant comprising trans-1,2-difluoroethylene (HFO-1132(E)), 2,3,3,3-tetrafluoropropene (HFO-1234yf), and 1,1,1,2-tetrafluoroethane (R134a), the total content of HFO-1132(E), HFO-1234yf, and R134a being 99.5 mass % or more based on the total of the refrigerant.

Abstract: An object is to provide a novel low-GWP mixed refrigerant. Provided as a means for solution is a composition comprising a refrigerant, the refrigerant comprising 1,1-difluoroethane (R152a), and difluoromethane (R32) and/or X in a total amount of 99.5 mass % or more based on the entire refrigerant, wherein X is trans-1,2-difluoroethylene (HFO-1132 (E)) and/or trifluoroethylene (HFO-1123).

Abstract: Provided is a semiconductor device including a buffer region. Provided is a semiconductor device including: semiconductor substrate of a first conductivity type; a drift layer of the first conductivity type provided in the semiconductor substrate; and a buffer region of the first conductivity type provided in the drift layer, the buffer region having a plurality of peaks of a doping concentration, wherein the buffer region has: a first peak which has a predetermined doping concentration, and is provided the closest to a back surface of the semiconductor substrate among the plurality of peaks; and a high-concentration peak which has a higher doping concentration than the first peak, and is provided closer to an upper surface of the semiconductor substrate than the first peak is.