Abstract: A composite substrate has a group 13 nitride semiconductor substrate having a first main surface and a second main surface and a supporting substrate having a bonding surface bonded with the first main surface of the group 13 nitride semiconductor substrate. The supporting substrate has a bonding region composed of silicon carbide having an average micropipe density of 10 cm?2 or higher and 100 cm?2 or lower at the bonding surface of the supporting substrate or composed of synthetic diamond having an atomic ratio of nitrogen to carbon atoms of 500 ppm or higher and 2000 ppm or lower.

Abstract: The present invention relates to a composite semipermeable membrane including: a support membrane; and a separation functional layer provided on the support membrane, in which the separation functional layer includes a thin membrane, the thin membrane has a fold structure including a plurality of protrusions, an actual length L of the thin membrane per 1 ?m length of the support membrane in a cross-sectional direction perpendicular to a membrane surface is 3.0 ?m or more, and a thickness of the thin membrane in the protrusion is 15 nm or more.

Abstract: The present invention relates to a composite semipermeable membrane including: a support membrane; and a separation functional layer provided on the support membrane, in which the separation functional layer includes a thin membrane, the thin membrane has a fold structure including a plurality of protrusions having a height of 10 nm or more, and in the fold structure, a ratio (T100/T25) is less than 0.95, where T25 is a thickness of the thin membrane in a region of 0% to 25% of the height of the protrusion and T100 is a thickness of the thin membrane in a region of 50% to 100% of the height of the protrusion.

Abstract: A multilayer ceramic capacitor includes a multilayer body including laminated dielectric layers, first and second main surfaces, first and second lateral surfaces, first and second end surfaces, first and second internal electrode layers laminated alternately with the dielectric layers and respectively exposed at the first and second end surfaces, first and second external electrodes respectively connected to the first and second internal electrode layers. The dielectric layers include a ceramic material. The ceramic material includes ceramic particles with an average particle diameter of about 710 nm or greater and about 830 nm or less. A percent coverage of the dielectric layers by the first internal electrode layers and a percent coverage of the dielectric layers by the second internal electrode layers are about 60% or higher and about 85% or lower.

Abstract: The present invention relates to a composite semipermeable membrane including: a support membrane; and a separation functional layer provided on the support membrane, in which the separation functional layer comprises a plurality of protrusions formed of a thin membrane, and at least a part of the plurality of protrusions has a ratio (Wa/Wb) of larger than 1.3 in cross sections at arbitrary ten positions each having a length of 2.0 ?m in a membrane surface direction of the support membrane, provided that Wa is a maximum width of the protrusion and Wb is a root width of the protrusion.

Abstract: The present invention relates to a composite semipermeable membrane including: a support membrane; and a separation functional layer provided on the support membrane, in which the separation functional layer includes a thin membrane, the thin membrane has a fold structure including a plurality of protrusions having a height of 10 nm or more, and in the fold structure, a ratio (T100/T25) is less than 0.95, where T25 is a thickness of the thin membrane in a region of 0% to 25% of the height of the protrusion and T100 is a thickness of the thin membrane in a region of 50% to 100% of the height of the protrusion.

Abstract: The present invention relates to a composite semipermeable membrane including: a support membrane; and a separation functional layer provided on the support membrane, in which the separation functional layer includes a thin membrane, the thin membrane has a fold structure including a plurality of protrusions, an actual length L of the thin membrane per 1 ?m length of the support membrane in a cross-sectional direction perpendicular to a membrane surface is 3.0 ?m or more, and a thickness of the thin membrane in the protrusion is 15 nm or more.

Abstract: The present invention relates to a composite semipermeable membrane including: a support membrane; and a separation functional layer provided on the support membrane, in which the separation functional layer comprises a plurality of protrusions formed of a thin membrane, and at least a part of the plurality of protrusions has a ratio (Wa/Wb) of larger than 1.3 in cross sections at arbitrary ten positions each having a length of 2.0 ?m in a membrane surface direction of the support membrane, provided that Wa is a maximum width of the protrusion and Wb is a root width of the protrusion.

Abstract: It is provided a seed crystal layer, composed of a group 13 nitride crystal selected from gallium nitride, aluminum nitride, indium nitride or the mixed crystals thereof, on an alumina layer on a single crystal substrate. By annealing under reducing atmosphere at a temperature of 950° C. or higher and 1200° C. or lower, convex-concave morphology is formed on a surface of the seed crystal layer so as to have an RMS value of 180 nm to 700 nm measured by an atomic force microscope. On the surface of the seed crystal layer, it is grown a group 13 nitride crystal layer composed of a group 13 nitride crystal selected from gallium nitride, aluminum nitride, indium nitride or the mixed crystals thereof.

Abstract: A free-standing substrate, for growing epitaxial crystal composed of a group 13 nitride crystal selected from gallium nitride, aluminum nitride, indium nitride or a mixed crystal thereof, includes a nitrogen polar surface and group 13 element polar surface. The nitrogen polar surface is warped in a convex shape, and a chamfer part is provided in an outer peripheral part of the nitrogen polar surface.

Abstract: A layer of a crystal of a group 13 nitride selected from gallium nitride, aluminum nitride, indium nitride and the mixed crystals thereof has an upper surface and a bottom surface. The upper surface of a crystal layer of the group 13 nitride includes a linear high-luminance light-emitting part and a low-luminance light-emitting region adjacent to the high-luminance light-emitting part, observed by cathode luminescence. The high-luminance light-emitting part includes a portion extending along an m-plane of the crystal of the group 13 nitride. The crystal of the nitride of the group 13 element contains oxygen atoms in a content of 1×1018 atom/cm3 or less, silicon atoms, manganese atoms, carbon atoms, magnesium atoms and calcium atoms in contents of 1×1017 atom/cm3 or less, chromium atoms in a content of 1×1016 atom/cm3 or less and chlorine atoms in a content of 1×1015 atom/cm3 or less.

Abstract: A layer of a crystal of a group 13 nitride selected from gallium nitride, aluminum nitride, indium nitride and the mixed crystals thereof has an upper surface and a bottom surface. The upper surface includes a linear high-luminance light-emitting part and a low-luminance light-emitting region adjacent to the high-luminance light-emitting part. The high-luminance light-emitting part includes a portion extending along an m-plane of the crystal of the group 13 nitride. A normal line to the upper surface has an off-angle of 2.0° or less with respect to <0001> direction of the crystal of the nitride of the group 13 element.

Abstract: A crystal substrate 1 includes an underlying layer 2 and a thick film 3. The underlying layer 2 is composed of a crystal of a nitride of a group 13 element and includes a first main face 2a and a second main face 2b. The thick film 3 is composed of a crystal of a nitride of a group 13 element and provided over the first main face of the underlying layer. The underlying layer 2 includes a low carrier concentration region 5 and a high carrier concentration region 4 both extending between the first main face 2a and the second main face 2b.

Abstract: A piezoelectric monocrystalline substrate is composed of a material represented by LiAO3 (A represents at least one element selected from the group consisting of niobium and tantalum), a bonding layer is compose of a material of an oxide of at least one element selected from the group consisting of niobium and tantalum, and an interface layer is provided along an interface between the piezoelectric monocrystalline substrate 6 and bonding layer, and the interface layer has a composition of ExO(1-x) (E represents at least one element selected from the group consisting of niobium and tantalum and 0.29?x?0.89).

Abstract: A base substrate includes a supporting substrate comprising aluminum oxide, and a base crystal layer provided on a main face of the supporting substrate, comprising a crystal of a nitride of a group 13 element and having a crystal growth surface. At lease one of a metal of a group 13 element and a reaction product of a material of the supporting substrate and the crystal of the nitride of the group 13 element is present between the raised part and the supporting substrate. The reaction product contains at least aluminum and a group 13 element.

Abstract: Provided are a light emitting device having a support layer having a surface with a three-dimensional shape, a light emitting functional layer formed on the surface with a three-dimensional shape of the support layer, and a translucent electrode layer provided on a side of the light emitting functional layer opposite to the support layer. The support layer functions as a reflective electrode, and a light emitting functional layer formed on the surface with a three-dimensional shape of the support layer. The light emitting functional layer has two or more layers composed of semiconductor single crystal grains. Each of the two or more layers has a single crystal structure in a direction approximately normal to the surface with a three-dimensional shape.

Abstract: It is provided a seed crystal layer, composed of a group 13 nitride crystal selected from gallium nitride, aluminum nitride, indium nitride or the mixed crystals thereof, on an alumina layer on a single crystal substrate. By annealing under reducing atmosphere at a temperature of 950° C. or higher and 1200° C. or lower, convex-concave morphology is formed on a surface of the seed crystal layer so as to have an RMS value of 180 nm to 700 nm measured by an atomic force microscope. On the surface of the seed crystal layer, it is grown a group 13 nitride crystal layer composed of a group 13 nitride crystal selected from gallium nitride, aluminum nitride, indium nitride or the mixed crystals thereof.

Abstract: A layer of a crystal of a nitride of a group 13 element selected from gallium nitride, aluminum nitride, indium nitride and the mixed crystals thereof includes an upper surface and a bottom surface. The upper surface includes a linear high-luminance light-emitting part and a low-luminance light-emitting region adjacent to the high-luminance light-emitting part, and the high-luminance light-emitting part has a portion extending along an m-plane of the crystal of the nitride of the group 13 element, when the upper surface is observed by cathode luminescence. The upper surface has an arithmetic average roughness Ra of 0.05 nm or more and 1.0 nm or less.

Abstract: A base substrate includes a supporting substrate and a base crystal layer provided on a main face of the supporting substrate composed of a crystal of a group 13 nitride and having a crystal growth surface. The base crystal layer includes a raised part. A reaction product of a material of the supporting substrate and the crystal of the group 13 nitride, metal of a group 13 element and/or void is present between the raised part and supporting substrate.

Abstract: A crystal of a group 13 nitride has an upper surface and lower surface and is composed of a crystal of a group 13 nitride selected from gallium nitride, aluminum nitride, indium nitride or the mixed crystals thereof. When the upper surface of the layer of the crystal of the group 13 nitride is observed by cathode luminescence, the upper surface includes a linear high-luminance light-emitting part and a low-luminance light-emitting region adjacent to the high-luminance light-emitting part. A half value width of reflection at the (0002) plane of a X-ray rocking curve on the upper surface is 3000 seconds or less and 20 seconds or more.