Patents by Inventor Takasi Kato

Takasi Kato has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor luminescent device and manufacturing method thereof
    Patent number: 7202510
    Abstract: A first principal plane faces a second principal plane of a p-type Ga N compound semiconductor that is in contact with an MQW luminescent layer. On the surface of the first principal plane, a first region made up of the p-type Ga N compound semiconductor including at least Ni is formed. On the surface of the first region, an electrode composed of an alloy including Ni and Aluminum is formed. On the electrode, a pad electrode for external connection consisting of Al or Au is formed.
    Type: Grant
    Filed: October 13, 2005
    Date of Patent: April 10, 2007
    Assignee: Sanken Electric Co., Ltd.
    Inventors: Yoshiki Tada, Tetsuji Moku, Arei Niwa, Yasuhiro Kamii, Junji Sato, Takasi Kato
  • Semiconductor device having hall-effect and manufacturing method thereof
    Patent number: 7067923
    Abstract: A first insulation film is made of a silicon material and is provided on a semiconductor base. A second insulation film is made of an organic material and is provided on the first insulation film. The second insulation film is thicker than the first insulation film. A third insulation film is thinner than the second insulation film and is provided on the second insulation film. The third insulation film is made of a silicon material and has a moisture resistance property. A fourth insulation film is made of an organic material. The fourth insulation film is provided on the third insulation film to prevent a damage on the third insulation film. A wiring layer is provided on the fourth insulation film.
    Type: Grant
    Filed: December 2, 2003
    Date of Patent: June 27, 2006
    Assignee: Sanken Electric Co., Ltd.
    Inventors: Hiromichi Kumakura, Hirokazu Goto, Takasi Kato
  • Semiconductor luminescent device and manufacturing method thereof
    Publication number: 20060081834
    Abstract: A first principal plane faces a second principal plane of a p-type Ga N compound semiconductor that is in contact with an MQW luminescent layer. On the surface of the first principal plane, a first region made up of the p-type Ga N compound semiconductor including at least Ni is formed. On the surface of the first region, an electrode composed of an alloy including Ni and Aluminum is formed. On the electrode, a pad electrode for external connection consisting of Al or Au is formed.
    Type: Application
    Filed: October 13, 2005
    Publication date: April 20, 2006
    Applicant: Sanken Electric Co., Ltd.
    Inventors: Yoshiki Tada, Tetsuji Moku, Arei Niwa, Yasuhiro Kamii, Junji Sato, Takasi Kato
  • Semiconductor device and manufacturing method thereof
    Publication number: 20040110367
    Abstract: A first insulation film is made of a silicon material and is provided on a semiconductor base. A second insulation film is made of an organic material and is provided on the first insulation film. The second insulation film is thicker than the first insulation film. A third insulation film is thinner than the second insulation film and is provided on the second insulation film. The third insulation film is made of a silicon material and has a moisture resistance property. A fourth insulation film is made of an organic material. The fourth insulation film is provided on the third insulation film to prevent a damage on the third insulation film. A wiring layer is provided on the fourth insulation film.
    Type: Application
    Filed: December 2, 2003
    Publication date: June 10, 2004
    Inventors: Hiromichi Kumakura, Hirokazu Goto, Takasi Kato
  • Current detector utilizing hall effect
    Patent number: 6545457
    Abstract: A Hall-effect semiconductor device is formed on a metal-made baseplate, as of nickel-plated copper, via a magnetic layer of Permalloy or the like. Higher in magnetic permeability than the baseplate, the magnetic layer is designed to reduce the magnetic resistance of the flux path. A plastic encapsulation thoroughly encloses the semiconductor device, magnetic layer, and baseplate.
    Type: Grant
    Filed: June 29, 2001
    Date of Patent: April 8, 2003
    Assignee: Sanken Electric Co., Ltd.
    Inventors: Hirokazu Goto, Koji Ohtsuka, Takasi Kato, Hiromichi Kumakura
  • Hall-effect magnetoelectric converter
    Publication number: 20020011841
    Abstract: A Hall-effect semiconductor device is formed on a metal-made baseplate, as of nickel-plated copper, via a magnetic layer of Permalloy or the like. Higher in magnetic permeability than the baseplate, the magnetic layer is designed to reduce the magnetic resistance of the flux path. A plastic encapsulation thoroughly encloses the semiconductor device, magnetic layer, and baseplate.
    Type: Application
    Filed: June 29, 2001
    Publication date: January 31, 2002
    Applicant: Sanken Electric Co., Ltd.
    Inventors: Hirokazu Goto, Koji Ohtsuka, Takasi Kato, Hiromichi Kumakura