Abstract: A semiconductor device comprising a wiring circuit board and a semiconductor chip mounted through a bump electrode on the circuit board, a space between the circuit board and the semiconductor chip as well as a periphery of the semiconductor chip being encapsulated with a resin containing a filler. The resin is constituted by a first resin disposed in a region surrounded by bump electrodes positioned on the outermost periphery of the semiconductor chip, and by a second resin disposed in a region not surrounded by bump electrodes positioned on the outermost periphery of the semiconductor chip, the first and second resins being distinct from each other in at least one feature selected from a content, a maximum particle diameter and an average particle diameter of the filler.

Abstract: A semiconductor device comprising a wiring circuit board and a semiconductor chip mounted through a bump electrode on the circuit board, a space between the circuit board and the semiconductor chip as well as a periphery of the semiconductor chip being encapsulated with a resin containing a filler. The resin is constituted by a first resin disposed in a region surrounded by bump electrodes positioned on the outermost periphery of the semiconductor chip, and by a second resin disposed in a region not surrounded by bump electrodes positioned on the outermost periphery of the semiconductor chip, the first and second resins being distinct from each other in at least one feature selected from a content, a maximum particle diameter and an average particle diameter of the filler.

Abstract: An electronic circuit device includes a substrate, a wiring layer formed on the surface of the substrate and essentially consisting of at least one metal selected from the group consisting of gold, copper, tin, and aluminum, a bump formed on the wiring layer and essentially consisting of at least one metal selected from the group consisting of gold, copper, and aluminum, and a micro electronic element formed on the bump, wherein solid-phase diffusion bonding is performed at least either between the wiring layer and the bump or between the bump and an electrode of the micro electronic element.

Abstract: An electronic circuit device comprising a printed wiring board having a major surface and pads provided on the major surface of the printed wiring board, a plurality of electrodes provided partly on at least one major surface of the leadless component and partly on sides of the leadless component, a plurality of bumps provided on the pads, providing a gap between the major surface of the printed wiring board and the major surface of the leadless component, and electrically connecting those parts of the electrodes which are provided on the major surface of the leadless component to the pads, and a plurality of electrically conductive members integral with the bumps, extending from the bumps to those parts of the electrodes which are provided on the sides of the leadless component.

Abstract: A semiconductor device contains a semiconductor chip and a circuit board. The chip has a first surface at which the main region is formed. On the surface, a plurality of chip electrodes and a perimeter electrode surrounding the chip electrodes are formed. Bumps and a wall member made of solder metal are formed on the chip electrodes and frame-shaped electrode, respectively. The circuit board has a first surface facing the first surface of the chip. On the first surface of the circuit board, a plurality of board electrodes and a perimeter electrode are placed so as to correspond to the chip electrodes and the perimeter electrode. In a state where the chip and the board face each other, heat treatment is performed to connect the bumps and wall member to the board simultaneously by reflow. The wall member connects the chip to the board while surrounding the main region and the bumps continuously, to form essentially a closed space between the chip and the board.