Patents by Inventor Takasumi Ooyanagi

Takasumi Ooyanagi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • SIC semiconductor device and method for manufacturing the same
    Patent number: 7855384
    Abstract: A SiC semiconductor device includes: a SiC substrate having a drain layer, a drift layer and a source layer stacked in this order; multiple trenches penetrating the source layer and reaching the drift layer; a gate layer on a sidewall of each trench; an insulation film on the sidewall of each trench covering the gate layer; a source electrode on the source layer; and a diode portion in or under the trench contacting the drift layer to provide a diode. The drift layer between the gate layer on the sidewalls of adjacent two trenches provides a channel region. The diode portion is coupled with the source electrode, and insulated from the gate layer with the insulation film.
    Type: Grant
    Filed: April 10, 2007
    Date of Patent: December 21, 2010
    Assignees: DENSO CORPORATION, Hitachi Ltd.
    Inventors: Tsuyoshi Yamamoto, Toshio Sakakibara, Hiroki Nakamura, Toshiyuki Morishita, Takasumi Ooyanagi, Atsuo Watanabe
  • SIC semiconductor device and method for manufacturing the same
    Publication number: 20070241338
    Abstract: A SiC semiconductor device includes: a SiC substrate having a drain layer, a drift layer and a source layer stacked in this order; multiple trenches penetrating the source layer and reaching the drift layer; a gate layer on a sidewall of each trench; an insulation film on the sidewall of each trench covering the gate layer; a source electrode on the source layer; and a diode portion in or under the trench contacting the drift layer to provide a diode. The drift layer between the gate layer on the sidewalls of adjacent two trenches provides a channel region. The diode portion is coupled with the source electrode, and insulated from the gate layer with the insulation film.
    Type: Application
    Filed: April 10, 2007
    Publication date: October 18, 2007
    Applicants: DENSO CORPORATION, HITACHI, LTD.
    Inventors: Tsuyoshi Yamamoto, Toshio Sakakibara, Hiroki Nakamura, Toshiyuki Morishita, Takasumi Ooyanagi, Atsuo Watanabe