Abstract: A process for manufacturing a quartz crystal element consists of the steps of producing plural quartz layers on a surface of a crystalline substrate having a lattice constant differing from that of quartz crystal, in which each of the quartz layers consists of a crystalline phase and an amorphous phase, and percentage of the crystalline phase in the quartz layer farther from the substrate is larger than percentage of the crystalline phase in the quartz layer adjacent to the substrate; and producing an epitaxially grown quartz crystal film on the surface of the quartz layer farther from the substrate by a reaction between silicon alkoxide and oxygen.

Abstract: A single crystal of quartz thin film and a production method therefor are provided. A method for producing a quartz epitaxial thin film comprises the steps of vaporizing a silicon alkoxide as a silicon source under atmospheric pressure to introduce the silicon alkoxide to a substrate with hydrogen chloride as a reaction promoter, and reacting ethyl silicate with oxygen to deposit a quartz on the substrate. The single crystal of quartz thin film has excellent crystalinity, and optical properties.

Abstract: A quartz oscillator includes a base having a recessed portion provided on one face thereof by processing to have an inverse mesa shape, a quartz thin-film formed on the other face of the base by epitaxial growth to have a thickness of 10 &mgr;m or less, a vibrating reed portion, and excitation electrodes for mechanically supporting the quartz thin-film and for vibrating the vibrating reed portion.

Abstract: A quartz oscillator includes a base, a quartz thin-film formed on the base by epitaxial growth, a vibrating reed portion formed by processing the quartz thin-film, and excitation electrodes for vibrating the vibrating reed portion. At least one of the excitation electrodes may be formed by depositing a metal. The material for the base may include a single-element semiconductor, a compound semiconductor, and an oxide. When a semiconductor is used for the base, a semiconductor circuit may be provided to the base to form a module including a quartz oscillator.

Abstract: A single crystal thin film and a production method therefor are provided. A method for producing a crystal epitaxial thin film comprises the steps of vaporizing a silicon alkoxide as a silicon source under atmospheric pressure to introduce the silicon alkoxide to a substrate with hydrogen chloride as a reaction promoter, and reacting ethyl silicate with oxygen to deposit a crystal on the substrate. The single crystal thin film has excellent crystalinity, and optical properties.

Abstract: A crystal oscillator includes a base, a crystal thin-film formed on the base by epitaxial growth, a vibrating reed portion formed by processing the crystal thin-film, and excitation electrodes for vibrating the vibrating reed portion. At least one of the excitation electrodes may be formed by depositing a metal. The material for the base may include a single-element semiconductor, a compound semiconductor, and an oxide. When a semiconductor is used for the base, a semiconductor circuit may be provided to the base to form a module including a crystal oscillator.

Abstract: In reduction of an epoxy group-containing organic compound, for example, a C5-C20 saturated or unsaturated epoxy cycloaliphatic compound, in the presence of a nickel catalyst, by bringing the compound into contact with hydrogen, the target compound can be produced at a high yield by adding a basic substance (for example, an alkali metal hydroxide, an alkali metal carbonate, an alkali metal alkoxide, and an amine compound having 1 to 3 C1-C12 alkyl groups), to the reduction reaction system, to thereby restrict production of by-products due to a side deoxidation reaction.

Abstract: Cyclododecanone and cyclododecanol are produced each in high yield by reacting a epoxycyclododecane compound with hydrogen in the presence of a solid catalyst containing (a) catalytic component including a platinum group metal, (b) a promoter component including a VIII group, IIb group, IIIb group, IVb group, Vb group VIb group or VIIb group element or lanthanoid element or compound of the element, and (c) a carrier supporting the components (a) and (b) thereon.

Abstract: The present invention provides a method for the preparation of an iron nitride thin film by which an iron nitride thin film having a high growth rate can be epitaxially grown under atmospheric pressure without using any expensive vacuum system or raw materials, and an iron nitride thin film prepared by this method. This method for the preparation of an iron nitride thin film comprises the steps of vaporizing an iron halide used as a raw material 51 for the preparation of a thin film and reacting the resulting iron halide gas with a nitrogen source gas 7 containing nitrogen to produce an iron nitride gas; and preparing an epitaxial film of iron nitride 63 on a substrate 61 by allowing the iron halide gas to become adsorbed on the substrate 61 under atmospheric pressure and grow epitaxially thereon.

Abstract: An epoxycyclododecane compound is produced by a catalytic hydrogenation reaction of 1,2-epoxy-5,9-cyclododecadiene, using a specific platinum-containing catalyst having a long life, under a hydrogen gas pressure of 0.8 to 9 MPa, and with a high yield of the target compound.

Abstract: A single crystal thin film and a production method therefor are provided. A method for producing a crystal epitaxial thin film comprises the steps of vaporizing a silicon alkoxide as a silicon source under atmospheric pressure to introduce the silicon alkoxide to a substrate with hydrogen chloride as a reaction promoter, and reacting ethyl silicate with oxygen to deposit a crystal on the substrate. The single crystal thin film has excellent crystalinity, and optical properties.

Abstract: An epoxycyclododecane compound is produced by a catalytic hydrogenation reaction of 1,2-epoxy-5,9-cyclododecadiene, using a specific platinum-containing catalyst having a long life, under a hydrogen gas pressure of 0.8 to 9 MPa, and with a high yield of the target compound.

Abstract: Epoxidized C6-C12 cyclohydrocarbon compounds, for example, epoxidized C6-C12 cycloalkanes, cycloalkenes and/or cycloalkadienes are converted to cycloalkanols, cycloalkanones and cycloalkanes by hydrogenating the epoxidized C6-C12 cyclohydrocarbon compounds with hydrogen under a pressure of 0.1 to 5.4 MPa at a temperature of 100 to 280° C. in the presence of a catalyst containing at least one platinum group metal, for example, Pd or Ru.

Abstract: A cycloalkylhydroperoxide, preferably having a C.sub.5-20 cycloalkyl group, is decomposed by bringing it into contact with a ruthenium complex of the formula:?RuCl.sub.2 L.sub.n !.sub.m (I)wherein L=a neutral ligand, n=1-4 and m.gtoreq.1, for example, ?RuCl.sub.2 (PPh.sub.3).sub.3 !, to produce a cycloalkanol and cycloalkanone.

Abstract: A printing blanket including a base fabric and a surface layer in a laminated structure wherein a surface reforming agent containing a perfluoroalkyl group is applied to the surface layer such that a critical surface tension ranging from 10 to 16 dyn/cm appears on the surface of the surface layer is disclosed. To practically manufacture a printing blanket of the foregoing type, there is also disclosed a method wherein a compressible layer is placed on a base fabric, a surface layer is then placed on the compressible layer thereby to form a laminated structure with the base fabric and the compressible layer, and thereafter, a surface modifier containing a perfluoroalkyl group is applied to the surface layer such that a critical surface tension ranging from 10 to 16 dyne/cm appears on the surface of the surface layer. It is preferable that the surface layer is molded of a compound based on a nitrile butadiene rubber.

Abstract: There is disclosed a 5-mercapto-1,2,3-thiadiazoles composition comprising a 5-mercapto-1,2,3-thiadiazole combined with (A) one or more compounds selected from the group consisting of water, an alcohol, an aromatic hydrocarbon and a halogenated hydrocarbon and (B) a halide of an alkali metal and process for preparing the same.Said composition can remarkably reduce the explosiveness of a 5-mercapto-1,2,3-thiadiazole to make its handling easy and to make it usable for various applications with a sense of security, for example, for manufacturing pharmaceuticals and agricultural chemicals.

Abstract: A process for preparing protocatechualdehyde or a 3-alkoxy-4-hydroxybenzaldehyde which comprises subjecting catechol or a 2-alkoxyphenol to reaction with glyoxylic acid in a basic aqueous medium in the presence of a catalyst containing one or more compounds selected from aluminium oxide, silicon oxide and hydrated aluminium oxide in an amount of not less than 0.01 g per 1 g of the starting catechol or 2-alkoxyphenol at a temperature of 0.degree. to 50.degree. C., and then oxidizing the thus obtained reaction mixture in a basic medium.

Abstract: The compound thiohumic acid resulting from replacing at least a part of the carboxyl groups in humic acid by thiocarboxyl groups, i.e., ##EQU1## as well as a heavy metal adsorbent containing thiohumic acid as its active ingredient. This new compound is obtained by treating humic acid with a halogenating agent to form humic acid halide and treating such halide with a thiolating agent.