Abstract: An image forming apparatus includes an exposure part forming an electrostatic latent image on a charge region, a developer carrier developing the electrostatic latent image into two types of development images (printing developer image and no-printing developer image), a supply member supplying developer to the developer carrier, a first detection part detecting a first physical quantity correlating to the density of the no-printing developer image, a setting part performing a setting, based on the first physical quantity, for a development voltage applied to the developer carrier or a supply voltage applied to the supply member, a second detection part detecting a second physical quantity correlating to a number of rotations after the print of the printing developer image starts, a correction part correcting, based on the second physical quantity, the development voltage or the supply voltage set by the setting part, and a power source part applying the development voltage to the developer carrier and applie

Abstract: An image forming apparatus includes an exposure part forming an electrostatic latent image on a charge region, a developer carrier developing the electrostatic latent image into two types of development images (printing developer image and no-printing developer image), a supply member supplying developer to the developer carrier, a first detection part detecting a first physical quantity correlating to the density of the no-printing developer image, a setting part performing a setting, based on the first physical quantity, for a development voltage applied to the developer carrier or a supply voltage applied to the supply member, a second detection part detecting a second physical quantity correlating to a number of rotations after the print of the printing developer image starts, a correction part correcting, based on the second physical quantity, the development voltage or the supply voltage set by the setting part, and a power source part applying the development voltage to the developer carrier and applie

Abstract: An image formation unit includes an image carrier, a developer carrier configured to supply developer to the image carrier to form a developer image on the image carrier, first and second developer supply members configured to supply the developer to the developer carrier, a first developer container room configured to contain therein the developer and accommodating therein the first developer supply member, and a second developer container room configured to contain therein the developer and accommodating therein the second developer supply member.

Abstract: An image forming device having an detachable image forming unit that has an image carrier and an opening that exposes a part of the surface of the image carrier includes a determination unit that determines a cleaning time for the image carrier; and a rotation control unit that rotates the image carrier by a rotation unit that is less than or equal to a width of the opening, during the cleaning time.

Abstract: An image formation unit includes an image carrier, a developer carrier configured to supply developer to the image carrier to form a developer image on the image carrier, first and second developer supply members configured to supply the developer to the developer carrier, a first developer container room configured to contain therein the developer and accommodating therein the first developer supply member, and a second developer container room configured to contain therein the developer and accommodating therein the second developer supply member.

Abstract: An image forming device includes an imaging apparatus configured to form an image according to image data and to maintain information associated with performance of the imaging apparatus, a replaceable member that is mounted in the imaging apparatus and used for forming an image, a consumed amount calculation unit configured to calculate a usage value of the replaceable member, and a notification control unit configured to control a replacement notification. Wherein the notification control unit controls a timing of the replacement notification based on the usage value calculated by the consumed amount calculation unit and the information associated with performance of the imaging apparatus.

Abstract: An image forming apparatus includes a latent image bearing body that bears a latent image, a charging member applied with a charging voltage and configured to charge a surface of the latent image bearing body, a developer bearing body applied with a developing voltage and configured to develop the latent image with a developer, a developer regulating member applied with a regulating-member-application voltage and configured to form a layer of the developer on the developer bearing body, and a voltage switching unit configured to switch the regulating-member-application voltage. In a non-image-forming period, the voltage switching unit switches the regulating-member-application voltage from a voltage set for an image forming period to a different voltage.

Abstract: An image forming device having an detachable image forming unit that has an image carrier and an opening that exposes a part of the surface of the image carrier includes a determination unit that determines a cleaning time for the image carrier; and a rotation control unit that rotates the image carrier by a rotation unit that is less than or equal to a width of the opening, during the cleaning time.

Abstract: An image forming device includes an imaging apparatus configured to form an image according to image data and to maintain information associated with performance of the imaging apparatus, a replaceable member that is mounted in the imaging apparatus and used for forming an image, a consumed amount calculation unit configured to calculate a usage value of the replaceable member, and a notification control unit configured to control a replacement notification. Wherein the notification control unit controls a timing of the replacement notification based on the usage value calculated by the consumed amount calculation unit and the information associated with performance of the imaging apparatus.

Abstract: An image forming apparatus is provided capable of preventing fog from happening and obtaining more stable image density, which includes an image carrier; a charging section for charging surface of the image carrier; an exposing section for forming an electrostatic latent image on the image carrier; a developing section for making developer adhere to the electrostatic latent image formed on the image carrier so as to form a visible image; a transferring section to transfer the visible image onto a transfer member; a density detecting section to detect a density of the visible image; a development voltage setting section to set a development; a charge voltage setting section to set a difference between the charge voltage and the development into a value in a predetermined range; and an exposure quantity setting section to set an appointed exposure quantity with respect to the charge voltage.

Abstract: An image forming apparatus includes a latent image bearing body that bears a latent image, a charging member applied with a charging voltage and configured to charge a surface of the latent image bearing body, a developer bearing body applied with a developing voltage and configured to develop the latent image with a developer, a developer regulating member applied with a regulating-member-application voltage and configured to form a layer of the developer on the developer bearing body, and a voltage switching unit configured to switch the regulating-member-application voltage. In a non-image-forming period, the voltage switching unit switches the regulating-member-application voltage from a voltage set for an image forming period to a different voltage.

Abstract: An image forming apparatus is provided capable of preventing fog from happening and obtaining more stable image density, which includes an image carrier; a charging section for charging surface of the image carrier; an exposing section for forming an electrostatic latent image on the image carrier; a developing section for making developer adhere to the electrostatic latent image formed on the image carrier so as to form a visible image; a transferring section to transfer the visible image onto a transfer member; a density detecting section to detect a density of the visible image; a development voltage setting section to set a development; a charge voltage setting section to set a difference between the charge voltage and the development into a value in a predetermined range; and an exposure quantity setting section to set an appointed exposure quantity with respect to the charge voltage.

Abstract: A light-emitting-diode array is formed on a substrate having an upper layer of a semiconducting material and a lower layer of an insulating or semi-insulating material. The upper layer is divided into blocks by isolation channels that cut completely through the upper layer. The light-emitting diodes, which are formed by selective diffusion of an impurity into the upper layer, are arranged in a single row, with at least two light-emitting diodes in each block of the upper layer. Each block has a block electrode that drives the light-emitting diodes in the block. The row of light-emitting diodes is paralleled by a number of shared lines which cross the isolation channels. Each shared line is coupled to a plurality of light-emitting diodes in different blocks.

Abstract: An LED array head includes a circuit board and a plurality of LED array chips mounted thereon. Each of the plurality of LED array chips has a plurality of light-emitting elements aligned and exposed on a surface thereof. The plurality of LED array chips are aligned on the circuit board in a direction in which the plurality of light-emitting elements are aligned, so that the plurality of light-emitting elements lie on a single straight line. The LED array chips are bonded to the circuit board by an epoxy resin type soft adhesive.

Abstract: According to the present invention, a plurality of p-type semiconductor layers 13 are formed in a single row and a first layer insulating film 12 having first opening portions 16a and an n-side opening portion 17 is formed on the layers in an n-type semiconductor block 11. On the first layer insulating film 12, p-side electrodes 14 to connect to the p-type semiconductor layers 13 at the first opening portions 16a and an n-side electrode 55 (an n-side contact electrode 55a and an n-side pad electrode 55b) to connect with the n-type semiconductor block 11 at the n-side opening portion 17 are formed. Furthermore, p-side common wirings 4 to connect with specific p-side electrodes 14 are formed via a second layer insulating film 18. The p-side electrodes 14 and the n-side electrode 55 are formed using the same conductive film material through a single film formation and patterning process.

Abstract: A print head has an array of surface-emitting light-emitting diodes formed in a chip, near one edge of the chip. The chip is mounted on a conductive pattern on the component surface of a printed circuit board. The printed circuit board includes a material, exposed on the component surface throughout a region adjacent to the above-mentioned edge of the chip, that is less optically reflective than the conductive pattern. Emitted light that leaks through the chip edge is partly or completely absorbed by the exposed material, instead of being reflected by the conductive pattern. The exposed material may be a dielectric coating, a dielectric substrate, or a conductive paste that also bonds the chip to the conductive pattern.

Abstract: A light-emitting diode includes a first semiconductor epitaxial layer of a first conduction type, a second semiconductor epitaxial layer of the first conduction type laminated upon the first semiconductor epitaxial layer and having an energy band gap greater than that of the first semiconductor epitaxial layer, and an area of impurities formed within the first semiconductor epitaxial layer and the second semiconductor epitaxial layer by doping impurity of a second conduction type from the side of the second semiconductor epitaxial layer. A front of the diode is located within the first semiconductor epitaxial layer.

Abstract: A 1200 dpi LED may be manufactured without highly accurate mask alignment and provide good light radiation efficiency. A first interlayer dielectric is formed on a semiconductor substrate and has a plurality of first windows formed therein and aligned in a row. A diffusion region is formed in the semiconductor substrate through each of the first windows. An electrode is formed to have an area in contact with the corresponding diffusion region. Another electrode is formed on the other side of the substrate. A second interlayer dielectric is formed on the first interlayer dielectric such that the second interlayer dielectric does not overlap the area of the electrode and does not extend to a first perimeter of the area.

Abstract: A light-emitting-diode array is formed on a substrate having an upper layer of a semiconducting material and a lower layer of an insulating or semi-insulating material. The upper layer is divided into blocks by isolation channels that cut completely through the upper layer. The light-emitting diodes, which are formed by selective diffusion of an impurity into the upper layer, are arranged in a single row, with at least two light-emitting diodes in each block of the upper layer. Each block has a block electrode that drives the light-emitting diodes in the block. The row of light-emitting diodes is paralleled by a number of shared lines which cross the isolation channels. Each shared line is coupled to a plurality of light-emitting diodes in different blocks.

Abstract: A high-density semiconductor device and semiconductor device array exhibiting high light emission efficiency which can be mass-produced at low cost with high yield is provided. An LED array comprises a structure wherein an n-type GaAs buffer layer 102 is formed on an n-type GaAs substrate 101, on which are then stacked an n-type AlzGa1−zAs layer 103, an n-type AlyGa1−yAs layer 104, a semi-insulating AlxGa1−xAs layer 105, and a semi-insulating GaAs layer 106. The energy band gaps of the AlzGa1−zAs layer 103 and AlxGa1−xAs layer 105 are at least larger than the energy band gap of the AlyGa1−yAs layer 104. A pn junction is formed by selective diffusion, having a diffusion front in the semiconductor layer having the smaller energy band gap sandwiched between the semiconductor layers having the larger energy band gaps. The outermost layer forming ohmic contact is made a p-type GaAs region formed by zinc diffusion in a semi-insulating GaAs layer.