Patents by Inventor Takatoshi Hirota
Takatoshi Hirota has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 7339319Abstract: In a flat display device having a pair of substrates for defining a gas discharge space in which a gas used to generate discharge luminance is sealed, means for absorbing or reflecting near infrared rays is included.Type: GrantFiled: February 2, 2007Date of Patent: March 4, 2008Assignee: Fujitsu LimitedInventors: Takatoshi Hirota, Hideo Kimura, Kazuo Imaoka, Satoshi Yokoyama, Mitsuharu Sato, Shiro Naoi, Takaaki Onoe
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Publication number: 20070126362Abstract: In a flat display device having a pair of substrates for defining a gas discharge space in which a gas used to generate discharge luminance is sealed, means for absorbing or reflecting near infrared rays is included.Type: ApplicationFiled: February 2, 2007Publication date: June 7, 2007Applicant: FUJITSU LIMITEDInventors: Takatoshi HIROTA, Hideo Kimura, Kazuo Imaoka, Satoshi Yokoyama, Mitsuharu Sato, Shiro Naoi, Takaaki Onoe
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Patent number: 7196471Abstract: In a flat display device having a pair of substrates for defining a gas discharge space in which a gas used to generate discharge luminance is sealed, means for absorbing or reflecting near infrared rays is included.Type: GrantFiled: April 14, 2006Date of Patent: March 27, 2007Assignee: Fujitsu LimitedInventors: Takatoshi Hirota, Hideo Kimura, Kazuo Imaoka, Satoshi Yokoyama, Mitsuharu Sato, Shiro Naoi, Takaaki Onoe
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Publication number: 20060181213Abstract: In a flat display device having a pair of substrates for defining a gas discharge space in which a gas used to generate discharge luminance is sealed, means for absorbing or reflecting near infrared rays is included.Type: ApplicationFiled: April 14, 2006Publication date: August 17, 2006Applicant: FUJITSU LIMITEDInventors: Takatoshi Hirota, Hideo Kimura, Kazuo Imaoka, Satoshi Yokoyama, Mitsuharu Sato, Shiro Naoi, Takaaki Onoe
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Patent number: 7088042Abstract: In a flat display device having a pair of substrates for defining a gas discharge space in which a gas used to generate discharge luminance is sealed, means for absorbing or reflecting near infrared rays is included.Type: GrantFiled: October 1, 2003Date of Patent: August 8, 2006Assignee: Fujitsu LimitedInventors: Takatoshi Hirota, Hideo Kimura, Kazuo Imaoka, Satoshi Yokoyama, Mitsuharu Sato, Shiro Naoi, Takaaki Onoe
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Publication number: 20060152127Abstract: A display filter is provided that can realize price reduction without lowering electromagnetic wave shielding ability and near infrared rays shielding ability. A conductive mesh is used for shielding electromagnetic waves. A multilayered film and a coloring layer are used for shielding near infrared rays. The multilayered film reflects near infrared rays selectively and the coloring layer absorbs near infrared rays selectively. The use of the multilayered film significantly reduces near infrared rays absorption ability that is required for the coloring layer compared to the case where no multilayered film is used.Type: ApplicationFiled: September 29, 2005Publication date: July 13, 2006Applicant: FUJITSU HITACHI PLASMA DISPLAY LIMITEDInventors: Yoshimi Kawanami, Takatoshi Hirota, Nobuyuki Hori
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Publication number: 20040095068Abstract: In a flat display device having a pair of substrates for defining a gas discharge space in which a gas used to generate discharge luminance is sealed, means for absorbing or reflecting near infrared rays is included.Type: ApplicationFiled: October 1, 2003Publication date: May 20, 2004Applicant: Fujitsu LimitedInventors: Takatoshi Hirota, Hideo Kimura, Kazuo Imaoka, Satoshi Yokoyama, Mitssuharu Sato, Shiro Naoi, Takaaki Onoe
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Patent number: 6630789Abstract: In a flat display device having a pair of substrates for defining a gas discharge space in which a gas used to generate discharge luminance is sealed, means for absorbing or reflecting near infrared rays is included.Type: GrantFiled: March 29, 2001Date of Patent: October 7, 2003Assignee: Fujitsu LimitedInventors: Takatoshi Hirota, Hideo Kimura, Kazuo Imaoka, Satoshi Yokoyama, Mitsuharu Sato, Shiro Naoi, Takaaki Onoe
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Patent number: 6297582Abstract: In a flat display device having a pair of substrates for defining a gas discharge space in which a gas used to generate discharge luminance is sealed, means for absorbing or reflecting near infrared rays is included.Type: GrantFiled: June 3, 1997Date of Patent: October 2, 2001Assignee: Fujitsu LimitedInventors: Takatoshi Hirota, Hideo Kimura, Kazuo Imaoka, Satoshi Yokoyama, Mitsuharu Sato, Shiro Naoi, Takaaki Onoe
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Publication number: 20010019236Abstract: In a flat display device having a pair of substrates for defining a gas discharge space in which a gas used to generate discharge luminance is sealed, means for absorbing or reflecting near infrared rays is included.Type: ApplicationFiled: March 29, 2001Publication date: September 6, 2001Inventors: Takatoshi Hirota, Hideo Kimura, Kazuo Imaoka, Satoshi Yokoyama, Mitsuharu Sato, Shiro Naoi, Takaaki Onoe
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Patent number: 5578166Abstract: The method to etch an electrically conductive film comprises the steps of: forming a metal conductor film comprising copper or copper alloy, upon a substrate; and forming a mask pattern upon the metal conductor film; and etching an exposed part of the metal conductor film by the use of the mask pattern and a reactive ion-etching (RIE) employing a plasma of a gas mixture comprising a silicon tetra-chloride (SiCl.sub.4) gas, a nitrogen (N.sub.2) gas and a carbon compound gas, so that the exposed part of the metal conductor film is removed so as to leave the masked part. The metal conductor film may further comprise a diffusion protection layer formed of a refractory metal or its alloy upon and/or underneath the copper/mainly-copper layer. The mask pattern may be typically formed of silicon dioxide (SiO.sub.2). The substrate may further comprise an insulating layer thereon, typically formed of silicon dioxide (SiO.sub.2), for contacting said metal conductor film.Type: GrantFiled: May 24, 1995Date of Patent: November 26, 1996Assignee: Fujitsu LimitedInventor: Takatoshi Hirota