Abstract: According to this invention, it is possible to reduce the load of the user in a work of operating a model described in a hardware description language, and allow the user to readily make a change. This invention provides an information processing apparatus including a hardware processor that emulates, by hardware, operations corresponding to a model described in a hardware description language, and a control unit that controls, in accordance with instructions of a user received from a user terminal, at least one of inputs to the hardware processor and outputs from the hardware processor.

Abstract: According to this invention, it is possible to reduce the load of the user in a work of operating a model described in a hardware description language, and allow the user to readily make a change. This invention provides an information processing apparatus including a hardware processor that emulates, by hardware, operations corresponding to a model described in a hardware description language, and a control unit that controls, in accordance with instructions of a user received from a user terminal, at least one of inputs to the hardware processor and outputs from the hardware processor.

Abstract: A method of verifying photomask-pattern-correction results includes steps of cutting away photomask patterns of a region to be subjected to correction, forming photoresist models used for execution of an optical-proximity-effect-correction operation, executing the optical-proximity-effect-correction operation of the photomask patterns with respect to the photoresist models, executing an exposure simulation for simulating photoresist patterns formed on a photoresist film to which the photomask patterns are transferred after the optical-proximity-effect-correction operation, and designating parameters required for executions of the cutting away the photomask patterns of the region, the forming of the photoresist models, the optical-proximity-effect-correction operation, and the exposure simulation.

Abstract: A method of verifying photomask-pattern-correction results includes steps of cutting away photomask patterns of a region to be subjected to correction, forming photoresist models used for execution of an optical-proximity-effect-correction operation, executing the optical-proximity-effect-correction operation of the photomask patterns with respect to the photoresist models, executing an exposure simulation for simulating photoresist patterns formed on a photoresist film to which the photomask patterns are transferred after the optical-proximity-effect-correction operation, and designating parameters required for executions of the cutting away the photomask patterns of the region, the forming of the photoresist models, the optical-proximity-effect-correction operation, and the exposure simulation.