Abstract: Improving reliability of a semiconductor device including a transistor and resistance portion. Providing a semiconductor device including: a transistor including a gate portion and second conductivity type well layer, provided on a substrate having a first conductivity type drift region; a resistance portion provided close to a well layer of the transistor in the substrate; and two terminals connected to the resistance portion. The resistance portion is not of a second conductivity type region formed on the substrate. The semiconductor device further includes: an output transistor portion to switch whether or not the semiconductor device outputs current; a control transistor portion provided to a control protection circuit for controlling the output transistor portion; and a detection transistor portion to detect whether or not a power supply short-circuit is occurring to the semiconductor device.

Abstract: Improving reliability of a semiconductor device including a transistor and resistance portion. Providing a semiconductor device including: a transistor including a gate portion and second conductivity type well layer, provided on a substrate having a first conductivity type drift region; a resistance portion provided close to a well layer of the transistor in the substrate; and two terminals connected to the resistance portion. The resistance portion is not of a second conductivity type region formed on the substrate. The semiconductor device further includes: an output transistor portion to switch whether or not the semiconductor device outputs current; a control transistor portion provided to a control protection circuit for controlling the output transistor portion; and a detection transistor portion to detect whether or not a power supply short-circuit is occurring to the semiconductor device.

Abstract: An open load and a supply fault are differentiated between and detected with a simple configuration. A switching element (Q1) connected between the positive electrode of a direct current power supply and an output terminal (9) is caused to carry out a switching operation, thereby driving a load (7) connected to the output terminal (9). A load trouble detection circuit (21) that detects an opening of the load (7) or a supply fault when the voltage of the output terminal (9) is higher than the value of a first threshold voltage, and a supply fault detection circuit (25) that detects a failure of supply to the power supply of the load (7) when the voltage of the output terminal (9) is higher than the value of a second threshold value voltage subtracted from the power supply voltage when the switching element (Q1) is in an off-state, are included.

Abstract: An open load and a supply fault are differentiated between and detected with a simple configuration. A switching element (Q1) connected between the positive electrode of a direct current power supply and an output terminal (9) is caused to carry out a switching operation, thereby driving a load (7) connected to the output terminal (9). A load trouble detection circuit (21) that detects an opening of the load (7) or a supply fault when the voltage of the output terminal (9) is higher than the value of a first threshold voltage, and a supply fault detection circuit (25) that detects a failure of supply to the power supply of the load (7) when the voltage of the output terminal (9) is higher than the value of a second threshold value voltage subtracted from the power supply voltage when the switching element (Q1) is in an off-state, are included.

Abstract: The invention provides a low cost semiconductor device with which it is possible to easily select IGBT soft shutdown characteristics appropriate to a system. The drive IC (100) is configured of an output stage circuit (1), a shutdown circuit (2), a logic circuit (3), and an alarm signal processing circuit (4), the shutdown circuit (2) is configured of a resistor circuit (5) and an n-MOSFET (8), and the resistor circuit (5) is formed by an n-MOSFET (9), a resistor (10), and a switching conductor (11). By switching the switching conductor (11) of the resistor circuit (5) among A, B, and C conditions, it is possible to easily select shutdown characteristics of an IGBT (61) appropriate to a system.

Abstract: A method of forming a device in each of vertical trench gate MOSFET region and control lateral planar gate MOSFET region of a semiconductor substrate is disclosed. A trench is formed in the substrate in the vertical trench gate MOSFET region, a first gate oxide film is formed along the internal wall of the trench, and the trench is filled with a polysilicon film. A LOCOS oxide film is formed in a region isolating the devices. A second gate oxide film is formed on the substrate in the lateral planar gate MOSFET region. Advantages are that number of steps is suppressed, the gate threshold voltage of an output stage MOSFET is higher than the gate threshold voltage of a control MOSFET, the thickness of the LOCOS oxide film does not decrease, and no foreign object residue remains inside the trench.

Abstract: The invention provides a low cost semiconductor device with which it is possible to easily select IGBT soft shutdown characteristics appropriate to a system. The drive IC (100) is configured of an output stage circuit (1), a shutdown circuit (2), a logic circuit (3), and an alarm signal processing circuit (4), the shutdown circuit (2) is configured of a resistor circuit (5) and an n-MOSFET (8), and the resistor circuit (5) is formed by an n-MOSFET (9), a resistor (10), and a switching conductor (11). By switching the switching conductor (11) of the resistor circuit (5) among A, B, and C conditions, it is possible to easily select shutdown characteristics of an IGBT (61) appropriate to a system.