Abstract: To provide a substrate material made of an aluminum/silicon carbide composite alloy which has a thermal conductivity of 100 W/m×K or higher and a thermal expansion coefficient of 20×10?6/° C. or lower and is lightweight and compositionally homogeneous. A substrate material made of an aluminum/silicon carbide composite ally which comprises Al—SiC alloy composition parts and non alloy composition part and dispersed therein from 10 to 70% by weight silicon carbide particles, and in which the fluctuations of silicon carbide concentration in the Al—SiC alloy composition parts therein are within 1% by weight. The substrate material is produced by sintering a compact of an aluminum/silicon carbide starting powder at a temperature not lower than 600° C. in a non-oxidizing atmosphere.

Abstract: A heat-resistant, creep-resistant aluminum alloy according to the present invention contains at least 10 mass % and not more than 30 mass % of silicon, at least 3 mass % and not more than 10 mass % of at least either iron or nickel in total, at least 1 mass % and not more than 6 mass % of at least one rare earth element in total and at least 1 mass % and not more than 3 mass % of zirconium with the rest substantially consisting of aluminum, while the mean crystal grain size of silicon is not more than 2 ?m, the mean grain size of compounds other than silicon is not more than 1 ?m, and the mean crystal grain size of an aluminum matrix is at least 0.2 ?m and not more than 2 ?m. Thus, an aluminum alloy excellent in heat resistance and creep resistance is obtained.

Abstract: To provide a substrate material made of an aluminum/silicon carbide composite alloy which has a thermal conductivity of 100 W/m×K or higher and a thermal expansion coefficient of 20×10?6/° C. or lower and is lightweight and compositionally homogeneous. A substrate material made of an aluminum/silicon carbide composite ally which comprises Al—SiC alloy composition parts and non alloy composition part and dispersed therein from 10 to 70% by weight silicon carbide particles, and in which the fluctuations of silicon carbide concentration in the Al—SiC alloy composition parts therein are within 1% by weight. The substrate material is produced by sintering a compact of an aluminum/silicon carbide starting powder at a temperature not lower than 600° C. in a non-oxidizing atmosphere.

Abstract: A heat-resistant, creep-resistant aluminum alloy containing from 10 to 30 mass % of silicon, from 3 to 10 mass % of at least either iron or nickel in total, from 1 to 6 mass % of at least one rare earth element in total, and from 1 to 3 mass % of zirconium, preferably excluding titanium, magnesium and copper, with the rest substantially consisting of aluminum, is prepared by a method including providing a rapidly cooled aluminum alloy powder, molding the powder into a pressurized powder compact, and performing hot plastic working on the compact to form a product shape such as a billet. The compact is exposed to a temperature of at least 450° C. for at least 10 seconds and not more than 30 minutes before forming the product shape by the hot plastic working.

Abstract: A heat-resistant, creep-resistant aluminum alloy according to the present invention contains at least 10 mass % and not more than 30 mass % of silicon, at least 3 mass % and not more than 10 mass % of at least either iron or nickel in total, at least 1 mass % and not more than 6 mass % of at least one rare earth element in total and at least 1 mass % and not more than 3 mass % of zirconium with the rest substantially consisting of aluminum, while the mean crystal grain size of silicon is not more than 2 &mgr;m, the mean grain size of compounds other than silicon is not more than 1 &mgr;m, and the mean crystal grain size of an aluminum matrix is at least 0.2 &mgr;m and not more than 2 &mgr;m. Thus, an aluminum alloy excellent in heat resistance and creep resistance is obtained.

Abstract: To provide a substrate material made of an aluminum/silicon carbide composite alloy which has a thermal conductivity of 100 W/m×K or higher and a thermal expansion coefficient of 20×10−6/° C. or lower and is lightweight and compositionally homogeneous. A substrate material made of an aluminum/silicon carbide composite ally which comprises Al—SiC alloy composition parts and non alloy composition part and dispersed therein from 10 to 70% by weight silicon carbide particles, and in which the fluctuations of silicon carbide concentration in the Al—SiC alloy composition parts therein are within 1% by weight. The substrate material is produced by sintering a compact of an aluminum/silicon carbide starting powder at a temperature not lower than 600° C. in a non-oxidizing atmosphere.

Abstract: To provide a substrate material made of an aluminum/silicon carbide composite alloy which has a thermal conductivity of 100 W/m×K or higher and a thermal expansion coefficient of 20×10−6/° C. or lower and is lightweight and compositionally homogeneous. A substrate material made of an aluminum/silicon carbide composite ally which comprises Al—SiC alloy composition parts and non alloy composition part and dispersed therein from 10 to 70% by weight silicon carbide particles, and in which the fluctuations of silicon carbide concentration in the Al—SiC alloy composition parts therein are within 1% by weight. The substrate material is produced by sintering a compact of an aluminum/silicon carbide starting powder at a temperature not lower than 600° C. in a non-oxidizing atmosphere.

Abstract: An electromagnetic actuator for an automotive internal combustion engine is provided which has a stator, the weight of which is reduced. The electromagnetic actuator has a pair of electromagnets each made up of a stator and a coil, an armature disposed between the pair of electromagnets so as to be reciprocable therebetween, and a first stem provided on one side of the armature for transmitting the movement of the armature to external. The stator is formed by powder molding.

Abstract: It is proposed to lessen the weight and improve the mechanical strength of a retainer of a valve open-close mechanism driven by an electromagnetic actuator used in an automotive internal combustion engine. The electromagnetic actuator is mounted in a housing mounted on an internal combustion engine body. A first stem has its tip abutting the valve, which is provided with a retainer and carries a first coil spring. A second stem is provided on the other side of an armature. The second stem has a retainer. Between this retainer and the housing, a second coil spring is mounted. At least one of these parts is made of a metal smaller in specific weight than iron or its alloy. Each retainer has a boss and an arcuate corner portion having a radius of curvature R of 1.0 mm or over between a spring abutting surface and the boss to relieve stress concentration.

Abstract: In a combination of the shim 5 and cam 1 for use in a reciprocating mechanism portion, the shim 5 is made of a material having a hardness higher than that of the sliding surface of the cam 1 and the sliding surface of the shim 5 is finished to within a range of the surface roughness of Rz0.07-0.2 &mgr;m in 10-point mean surface roughness and further the sliding surface of the cam 1 is provided with open pores 1b. In the above combination, the generated torque and the wear of sliding portion are minimized by selecting a shim member whose surface roughness is difficult to deteriorate due to plastic deformation by a injection pump contact with a mating member and corrosion by various impurities mixed in lubricant and the like, and providing the surface of a cam member with an oil film holding function so as to maintain fluid lubrication of the sliding surface.

Abstract: To provide a substrate material made of an aluminum/silicon carbide composite alloy which has a thermal conductivity of 100 W/m×K or higher and a thermal expansion coefficient of 20×10−6/° C. or lower and is lightweight and compositionally homogeneous. A substrate material made of an aluminum/silicon carbide composite ally which comprises Al—SiC alloy composition parts and non alloy composition part and dispersed therein from 10 to 70% by weight silicon carbide particles, and in which the fluctuations of silicon carbide concentration in the Al—SiC alloy composition parts therein are within 1% by weight. The substrate material is produced by sintering a compact of an aluminum/silicon carbide starting powder at a temperature not lower than 600° C. in a non-oxidizing atmosphere.

Abstract: An electromagnetic actuator for an automotive internal combustion engine is provided which has a stator, the weight of which is reduced. The electromagnetic actuator has a pair of electromagnets each made up of a stator and a coil, an armature disposed between the pair of electromagnets so as to be reciprocable therebetween, and a first stem provided on one side of the armature for transmitting the movement of the armature to external. The stator is formed by powder molding.

Abstract: It is proposed to lessen the weight and improve the mechanical strength of a retainer of a valve open-close mechanism driven by an electromagnetic actuator used in an automotive internal combustion engine. The electromagnetic actuator is mounted in a housing mounted on an internal combustion engine body. A first stem has its tip abutting the valve, which is provided with a retainer and carries a first coil spring. A second stem is provided on the other side of an armature. The second stem has a retainer. Between this retainer and the housing, a second coil spring is mounted. At least one of these parts is made of a metal smaller in specific weight than iron or its alloy. Each retainer has a boss and an arcuate corner portion having a radius of curvature R of 1.0 mm or over between a spring abutting surface and the boss to relieve stress concentration.

Abstract: To provide a substrate material made of an aluminum/silicon carbide composite alloy which has a thermal conductivity of 100 W/m×K or higher and a thermal expansion coefficient of 20×10−6/° C. or lower and is lightweight and compositionally homogeneous. A substrate material made of an aluminum/silicon carbide composite ally which comprises Al—SiC alloy composition parts and non alloy composition part and dispersed therein from 10 to 70% by weight silicon carbide particles, and in which the fluctuations of silicon carbide concentration in the Al—SiC alloy composition parts therein are within 1% by weight. The substrate material is produced by sintering a compact of an aluminum/silicon carbide starting powder at a temperature not lower than 600° C. in a non-oxidizing atmosphere.

Abstract: A process for manufacturing a plastic package type semiconductor device composed of a rolled metal substrate made of copper or copper alloy and an insulating film formed on the surface of the substrate. The film may be a single-layer film made of silicon oxynitride or a composite film formed by laminating a silicon oxide layer and a silicon oxynitride layer (or a silicon nitride layer). A semiconductor element is mounted on the film or on the exposed surface of the substrate. Other passive elements are provided on the film. After connecting these elements with bonding wires, the entire device is sealed in a resin molding. This device is thus free of cracks due to difference in thermal expansion between the film and the substrate, or peeling due to moisture absorption.

Abstract: A method and resulting structure for constructing an IC package utilizing thin film technology. The package has a bottom conductive plate that has a layer of ceramic vapor deposited onto the plate in a predetermined pattern. Adjacent to the insulative layer of ceramic is a layer of conductive metal vapor deposited onto the ceramic. The layer of metal can be laid down onto the ceramic in a predetermined pattern to create a power plane, a plurality of signal lines, or a combination of power planes and signal lines. On top of the layer of conductive material is a lead frame separated by a layer of insulative polyimide material. The polyimide material has a plurality of holes filled with a conductive material, which electrically couple the layer of conductive material with the leads of the lead frame.

Abstract: A plastic package type semiconductor device is composed of a rolled metal substrate made of copper or copper alloy and an insulating film formed on the surface of the substrate. The film may be a single-layer film made of silicon oxynitride or a composite film formed by laminating a silicon oxide layer and a silicon oxynitride layer (or a silicon nitride layer). A semiconductor element is mounted on the film or on the exposed surface of the substrate. Other passive elements are provided on the film. After connecting these elements with bonding wires, the entire device is sealed in a resin molding. This device is thus free of cracks due to difference in thermal expansion between the film and the substrate, or peeling due to moisture absorption.

Abstract: A wiring board has a wiring circuit which is reliable and which can be easily miniaturized, and used for the production of a highly integrated, lighter, thinner, shorter, smaller and low-cost semiconductor device. This wiring board can be sealed in a plastic package. The wiring board has a metal plate and a thin-film dielectric layer formed on the surface of the metal plate. A semiconductor device is mounted on the surface of the dielectric layer or the exposed surface of the metal plate. Film wirings are formed on the dielectric layer. Each film wiring is in the form of a laminate formed by laminating, by vapor phase deposition or by plating, a an aluminum conductive layer, an adhesive layer of chromium, titanium or a laminate thereof, a diffusion barrier layer of nickel, copper or a laminate thereof, and a corrosion-preventive and wire bonding layer of gold.