Abstract: A liquid crystal display capable of improving the brightness without depending on the aperture ratio. By setting a lower polarization plate between an array substrate and a color filter substrate, the light reflected from a metal film formed on the array substrate can directly return to a light guide plate. Therefore, the light recycling efficiency is improved and the brightness of the liquid crystal display is improved.

Abstract: A liquid crystal display capable of improving the brightness without depending on the aperture ratio. By setting a lower polarization plate between an array substrate and a color filter substrate, the light reflected from a metal film formed on the array substrate can directly return to a light guide plate. Therefore, the light recycling efficiency is improved and the brightness of the liquid crystal display is improved.

Abstract: An EL display (10a) of the invention includes a substrate (12), a wall (14) arranged on the substrate (12) to form a plurality of openings corresponding to pixel areas, a plurality of pixel patterns (16) formed in the openings and a first lubrication layer (18a) formed on the wall (14).

Abstract: A method and an apparatus are provided for manufacturing an active matrix device including a top gate type TFT. A manufacturing process of the top gate type TFT includes the steps of forming an oxide film on the inner wall of a CVD processing chamber and arranging a substrate having source and drain electrodes formed thereon in the processing chamber. Additional steps include doping the source and drain electrodes with P, and forming an a-Si layer and a gate insulating film in the processing chamber. Furthermore, an apparatus is provided for manufacturing an active matrix device including a top gate type TFT having the inner surface of the processing chamber coated with the oxide film.

Abstract: A method and apparatus of forming a microcrystalline thin film comprises supplying a first gas and a second gas into a chamber containing a substrate during a first process, and supplying the second gas but not the first gas into the chamber during a second process. The first and second processes are performed plural times to form the microcrystalline thin film.

Abstract: A liquid crystal display capable of improving the brightness without depending on the aperture ratio. By setting a lower polarization plate between an array substrate and a color filter substrate, the light reflected from a metal film formed on the array substrate can directly return to a light guide plate. Therefore, the light recycling efficiency is improved and the brightness of the liquid crystal display is improved.

Abstract: A image display device includes a light-emitting device that emits light with a luminance depending on an electric current flowing therethrough, a driver that includes at least a first terminal and a second terminal and that supplies an electric current whose value is defined based on a potential difference between the first terminal and the second terminal to the light-emitting device, a potential difference supply unit that supplies the potential difference between the first terminal and the second terminal, a potential adjusting unit that adjusts so that the potential of the second terminal becomes reference potential while the potential difference supply unit supplies the potential difference, and a capacitor that is arranged between the first terminal and the second terminal and that holds the potential difference supplied from the potential difference supply unit.

Abstract: A method and an apparatus are provided for manufacturing an active matrix device including a top gate type TFT. A manufacturing process of the top gate type TFT includes the steps of forming an oxide film on the inner wall of a CVD processing chamber and arranging a substrate having source and drain electrodes formed thereon in the processing chamber. Additional steps include doping the source and drain electrodes with P, and forming an a-Si layer and a gate insulating film in the processing chamber. Furthermore, an apparatus is provided for manufacturing an active matrix device including a top gate type TFT having the inner surface of the processing chamber coated with the oxide film.

Abstract: A liquid crystal display capable of improving the brightness without depending on the aperture ratio. By setting a lower polarization plate between an array substrate and a color filter substrate, the light reflected from a metal film formed on the array substrate can directly return to a light guide plate. Therefore, the light recycling efficiency is improved and the brightness of the liquid crystal display is improved.

Abstract: Active matrix circuitry includes a light emission selection element is disposed between a source electrode of a driver element and an anode of a light emitting element. By turning the light emission selection element off, an electric current of the driver element can be turned off, whereby the threshold voltage of the driver element can be stored in the driver characteristics storage capacitor.

Abstract: An image display apparatus according to the present invention includes a data line that supplies a voltage determined based on emission brightness, a first switching unit that controls writing of the voltage supplied from the data line, a driver element that controls a current flowing through a current-controlled light emitting element, an organic electro-luminescence element that emits light of brightness corresponding to current applied, a reference-voltage writing unit that supplies a predetermined reference voltage, and a threshold-voltage detecting unit that detects a threshold voltage of the driver element.

Abstract: A liquid crystal display capable of improving the brightness without depending on the aperture ratio. By setting a lower polarization plate between an array substrate and a color filter substrate, the light reflected from a metal film formed on the array substrate can directly return to a light guide plate. Therefore, the light recycling efficiency is improved and the brightness of the liquid crystal display is improved.

Abstract: A transparent substrate is provided thereon with a first thin film transistor and a second thin film transistor to configure a driver circuit; a conductive layer to be connected to a data line or a scan line; a conductive layer to connect the first thin film transistor with the second thin film transistor; and an anode wire layer connected to the second thin film transistor. The anode wire layer is provided thereon with a light emitting diode including a plurality of light emitting layers and electron-hole pair generating layers alternately interposed between the light emitting layers.

Abstract: An organic light emitting diode display device includes a plurality of organic light emitting diode elements that are arranged in a matrix; a plurality of protective layers, each of the protective layers covering at least one of the organic light emitting diode elements; and a stress relaxation layer that is formed between the protective layers, for relaxing a stress caused by the protective layers. The stress relaxation layer may surround the protective layer. Moreover, the stress relaxation layer may be made of a shading material, and serve as a mask for forming the organic light emitting diode elements.

Abstract: An organic light-emitting display apparatus includes a substrate; an emission control circuit formed on the substrate; an insulating layer covering the control circuit; an organic light-emitting device including a first electrode and a second electrode and formed on the insulating layer; and a contact wiring structure for electrically connecting the emission control circuit and the organic light-emitting device. The contact wiring structure includes a first conductive layer made of the same material as the first electrode; a second conductive layer made of the same material as the second electrode; and a diamond-like carbon film between the first conductive layer and the second conductive layer.

Abstract: An organic light-emitting display apparatus includes a substrate; an emission control circuit formed on the substrate; an insulating layer covering the control circuit; an organic light-emitting device including a first electrode and a second electrode and formed on the insulating layer; and a contact wiring structure for electrically connecting the emission control circuit and the organic light-emitting device. The contact wiring structure includes a first conductive layer made of the same material as the first electrode; a second conductive layer made of the same material as the second electrode; and a diamond-like carbon film between the first conductive layer and the second conductive layer.

Abstract: A thin film transistor according to the present invention includes a gate electrode, a semiconductor layer having a channel forming region arranged on the gate electrode and an impurity region arranged on a part of the channel forming region, source and drain electrodes electrically connected to the impurity region, and a gate insulating film that electrically insulates the gate electrode and the semiconductor layer, wherein the distance between the upper end of the gate electrode and the upper end of the impurity region is larger than the distance between the upper end of the gate electrode and the upper end of the channel forming region.

Abstract: A thin film transistor according to the present invention includes a gate electrode, a semiconductor layer having a channel forming region arranged on the gate electrode and an impurity region arranged on a part of the channel forming region, source and drain electrodes electrically connected to the impurity region, and a gate insulating film that electrically insulates the gate electrode and the semiconductor layer, wherein the distance between the upper end of the gate electrode and the upper end of the impurity region is larger than the distance between the upper end of the gate electrode and the upper end of the channel forming region.

Abstract: The present invention improves a productivity in growing an a-Si film in a thin film transistor and to obtain an excellent thin film transistor characteristic. More specifically, disclosed is a thin film transistor in which an amorphous silicon film 2, a gate insulating film 3 and a gate electrode are sequentially stacked on an insulating substrate 1. The amorphous silicon film 2 includes a low defect-density amorphous silicon layer 5 formed at a low deposition rate and a high deposition rate amorphous silicon layer 6 formed at a deposition rate higher than that of the low defect-density amorphous silicon layer 5. The low defect-density amorphous silicon layer 5 in the amorphous silicon film 2 is grown closer to the insulating substrate 1, and the high deposition rate amorphous silicon layer 6 is grown closer to the gate insulating film 3.

Abstract: A display unit has an organic light emitting diode (OLED) 21 provided in correspondence with each of pixels and capable of emitting light by itself, a drive transistor 22 for driving the OLED 21, a twig transistor 23 which is formed so as to have a portion of an electrode of the drive transistor 22 independently formed, and which is used to detect a threshold voltage (Vth) of the drive transistor 22, a compensating capacitor 28 in which the threshold voltage (Vth) detected by the twig transistor 23 is written, a signal capacitor 27 in which a signal voltage to be supplied to the drive transistor 22 is written, a first transistor 24 provided between a data line and the signal capacitor 27, a second transistor 25 provided between the signal capacitor 27 and the compensating capacitor 28, and a third transistor 26 provided between a gate electrode and another electrode of the twig transistor 23.