Abstract: An occupant protection device includes an airbag mounted on a seat of a vehicle and attached to a belt body of a seat belt in a folded state. The airbag is inflated so as to allow an inflation gas discharged from an inflator to flow into the airbag and protect an occupant seated on the seat while protruding forward. An airbag cover is formed in an elongated shape that can cover an outer periphery of part of the belt body and a folding completion body corresponding to a state where the airbag is folded, and is closed such that at least the belt body is allowed to be inserted therethrough at both ends in the longitudinal direction.

Abstract: A SGPMOS transistor includes a base, a P-type diffusion layer, a gate electrode, and a LOCOS oxide film. The base includes at least one of a N-type semiconductor substrate, a P-type semiconductor substrate, and a N-type well. The P-type diffusion layer includes a P-type source and a P-type drain. At least the P-type drain includes a double diffusion structure including first and second P-type drain diffusion layers. The LOCOS oxide film is provided on the first P-type drain diffusion layer and covered by an end of the gate electrode. The first and the second P-type drain diffusion layers satisfy a relation of Y<Xj, in which Y represents a distance of the first P-type drain diffusion layer between the second P-type drain diffusion layer and the channel, and Xj represents a difference between depths of the second P-type drain diffusion layer and the first P-type drain diffusion layer.

Abstract: A SGPMOS transistor includes a base, a P-type diffusion layer, a gate electrode, and a LOCOS oxide film. The base includes at least one of a N-type semiconductor substrate, a P-type semiconductor substrate, and a N-type well. The P-type diffusion layer includes a P-type source and a P-type drain. At least the P-type drain includes a double diffusion structure including first and second P-type drain diffusion layers. The LOCOS oxide film is provided on the first P-type drain diffusion layer and covered by an end of the gate electrode. The first and the second P-type drain diffusion layers satisfy a relation of Y<Xj, in which Y represents a distance of the first P-type drain diffusion layer between the second P-type drain diffusion layer and the channel, and Xj represents a difference between depths of the second P-type drain diffusion layer and the first P-type drain diffusion layer.

Abstract: A cooking appliance in which food stored in a heating chamber is cooked by heating includes a detecting sensor for detecting completion of food to be cooked, a food weight measuring device for measuring weight of food to be cooked stored in the heating chamber, a detector for detecting a variation of the output of the detecting sensor, a comparison circuit for comparing the output of the detector with the output of the food weight measuring sensor, and a controller for controlling the heating operation depending upon on the output of the comparison circuit.

Abstract: A microwave oven includes a gas sensor for detecting a cooking condition. The resistance value of the gas sensor varies in response to the concentration of the gas generated from the foodstuff being cooked in the microwave oven. A resistance-to-frequency converter including an astable multivibrator is provided for converting the variation of the resistance value of the gas sensor into a frequency signal. A cooking constant setting circuit is provided for developing a signal of a reference frequency in response to a menu to be conducted. The frequency signal, indicative of the resistance value of the gas sensor, obtained by the resistance-to-frequency converter is compared with the reference frequency to terminate the cooking operation when the frequency signal reaches the reference frequency.