Abstract: There is provided an organic transistor having a bottom gate structure, composed of a substrate, a gate electrode, a gate insulating layer, source and drain electrodes and an organic semiconductor layer, wherein the gate insulating layer is formed so as to have a low surface energy in a portion thereof in proximity to the source and drain electrodes and a relatively high surface energy in a portion in proximity to the gate electrode, and consist of different compositions in a layer thickness direction, whereby an organic transistor has a short channel and high electric characteristics; as well as a method of manufacturing the organic semiconductor.

Abstract: In a method of manufacturing a liquid discharge head, liquid in a pressure generation chamber is pressurized by a piezoelectric driving force of a piezoelectric element, and is discharged from a nozzle communicated with the pressure generation chamber. The method is characterized by the steps of providing a flow passage substrate incorporating the pressure generation chamber, anodically joining a diaphragm to the flow passage substrate, forming electrode layers and a piezoelectric film of the piezoelectric element on the diaphragm, and crystallizing the piezoelectric film during or after the lamination at a crystallization temperature not higher than a strain point of the diaphragm.

Abstract: A device is formed by transferring a film onto a substrate when the film requires but the substrate is not adapted to a high temperature heat treatment process. The film having layers and formed on a first substrate having layers is transferred onto a second substrate having layers. The method of transferring the film comprises a first step of forming a lift-off layer and the film to be transferred on the first substrate, a second step of bonding the film to be transferred to the second substrate and a third step of separating the film to be transferred from the first substrate by etching the lift-off layer and transferring it onto the second substrate.

Abstract: A device is formed by transferring a film onto a substrate when the film requires but the substrate is not adapted to a high temperature heat treatment process. The film having layers and formed on a first substrate having layers is transferred onto a second substrate having layers. The method of transferring the film comprises a first step of forming a lift-off layer and the film to be transferred on the first substrate, a second step of bonding the film to be transferred to the second substrate and a third step of separating the film to be transferred from the first substrate by etching the lift-off layer and transferring it onto the second substrate.

Abstract: A liquid crystal device is formed by a pair of substrates each having thereon electrodes, and a liquid crystal disposed between the substrates so as to be movable along surfaces of the substrates. The liquid crystal is disposed over regions extending between the surfaces of the substrates including an effective optical modulation region, a first peripheral region outside the effective optical modulation region and a second peripheral region formed along a part or an entirety of outer periphery of the first peripheral region. The liquid crystal is disposed to have a higher liquid crystal molecular pretilt angle in the first peripheral region than in the effective optical modulation region. The liquid crystal is disposed in a random alignment state free from uniaxial alignment characteristic or in a layer structure in the second peripheral region.

Abstract: A ferroelectric liquid crystal device of a cell structure having a suppressed increase of cell thickness along a cell side is constituted by disposing a ferroelectric liquid crystal between a pair of electrode plates each sequentially provided with an electrode, an insulating film and an alignment film on a substrate. The alignment film is provided with a surface unevenness for suppressing a liquid crystal movement causing the increase in cell thickness. The surface unevenness is provided to the alignment film directly or to the insulating film below the alignment film, e.g., by wet forming the relevant film by using at least two solvents having different boiling points or dispersing fine particles within the relevant film, optionally followed by removal of the fine particles.

Abstract: A ferroelectric liquid crystal device of a cell structure having a suppressed increase of cell thickness along a cell side is constituted by disposing a ferroelectric liquid crystal between a pair of electrode plates each sequentially provided with an electrode, an insulating film and an alignment film on a substrate. The alignment film is provided with a surface unevenness for suppressing a liquid crystal movement causing the increase in cell thickness. The surface unevenness is provided to the alignment film directly or to the insulating film below the alignment film, e.g., by wet forming the relevant film by using at least two solvents having different boiling points or dispersing fine particles within the relevant film, optionally followed by removal of the fine particles.

Abstract: A ferroelectric liquid crystal device of a cell structure having a suppressed increase of cell thickness along a cell side is constituted by disposing a ferroelectric liquid crystal between a pair of electrode plates each sequentially provided with an electrode, an insulating film and an alignment film on a substrate. The aligment film is provided with a surface unevenness for suppressing a liquid crystal movement causing the increase in cell thickness. The surface unevenness is provided to the aligment film directly or to the insulating film below the alignment film, e.g., by wet forming the relevant film by using at least two solvents having different boiling points or dispersing fine particles within the relevant film, optionally followed by removal of the fine particles.

Abstract: A liquid crystal device, particularly a ferroelectric liquid crystal device, with improved homogeneity of initial alignment and bistability is provided by using an alignment film formed by rubbing with at least two rubbing rollers rotating at different speeds. Further a liquid crystal device, particularly a ferroelectric liquid crystal device, with improved drive characteristic as well as suppressed liquid crystal movement is provided by using an alignment film formed by plural times of rubbing under different conditions.

Abstract: A ferroelectric liquid crystal device of a cell structure having a suppressed increase of cell thickness along a cell side is constituted by disposing a ferroelectric liquid crystal between a pair of electrode plates each sequentially provided with an electrode, an insulating film and an alignment film on a substrate. The alignment film is provided with a surface unevenness for suppressing a liquid crystal movement causing the increase in cell thickness. The surface unevenness is provided to the alignment film directly or to the insulating film below the alignment film, e.g., by wet forming the relevant film by using at least two solvents having different boiling points or dispersing fine particles within the relavant film, optionally followed by removal of the fine particles.

Abstract: A liquid crystal device, particularly a ferroelectric liquid crystal device, is constituted by disposing a liquid crystal disposed between a pair of rubbing-treated substrates. The uniaxial alignment control force exerted by rubbing is gradually weakened as the rubbing treatment is successively applied to a large number of substrates. This is compensated by varying a rubbing condition, such as a relative moving speed, a rotational speed, or a pressing depth against the substrate of a rubbing roller. Alternatively, such a change in uniaxial alignment control force with time may be utilized for compensating for a difference in uniaxial alignment control force attributable to a difference in stripe electrode extension relative to the rubbing direction.