Abstract: In one embodiment, a method of manufacturing a semiconductor device includes etching a film with etching gas that includes a chain hydrocarbon compound expressed as CxHyFz where C, H and F respectively denote carbon, hydrogen and fluorine, “x” denotes an integer of three or more, and “y” and “z” respectively denote integers of one or more. Furthermore, the CxHyFz is the chain hydrocarbon compound in which each of terminal carbon atoms on a carbon chain of the chain hydrocarbon compound is bonded only to fluorine atoms out of hydrogen and fluorine atoms.

Abstract: In one embodiment, a method of manufacturing a semiconductor device includes forming a first film on a substrate. The method further includes performing a first process of forming a concave portion in the first film and forming a second film on a surface of the first film that is exposed in the concave portion by using a first gas containing a carbon element and a fluorine element. The method further includes performing a second process of exposing the second film to a second gas containing a hydrogen element or a fluid generated from the second gas.

Abstract: A method of manufacturing a semiconductor device according to an embodiment includes: forming a multilayer structure in which first insulating layers and second insulating layers are alternately stacked; and forming a plurality of contact holes in the multilayer structure, each of the contract holes having a different aspect ratio, the forming of one of the plurality of contact holes including a first step of etching at least one of the first insulating layers and a second step of etching at least one of the second insulating layers, and the second step is performed by using a mixed gas including a CHF gas which contains carbon, hydrogen, and fluorine and hydrogen gas.

Abstract: In one embodiment, a method of manufacturing a semiconductor device includes forming a first film on a substrate. The method further includes performing a first process of forming a concave portion in the first film and forming a second film on a surface of the first film that is exposed in the concave portion by using a first gas containing a carbon element and a fluorine element. The method further includes performing a second process of exposing the second film to a second gas containing a hydrogen element or a fluid generated from the second gas.

Abstract: In one embodiment, a method of manufacturing a semiconductor device includes etching a film with etching gas that includes a chain hydrocarbon compound expressed as CxHyFz where C, H and F respectively denote carbon, hydrogen and fluorine, “x” denotes an integer of three or more, and “y” and “z” respectively denote integers of one or more. Furthermore, the CxHyFz is the chain hydrocarbon compound in which each of terminal carbon atoms on a carbon chain of the chain hydrocarbon compound is bonded only to fluorine atoms out of hydrogen and fluorine atoms.

Abstract: According to one embodiment, a semiconductor device includes: a substrate; a stacked body that includes a conductive layer and an insulating layer which are alternately stacked in a first direction with respect to the substrate; a memory film that extends through the stacked body in the first direction and includes a charge storage layer; a separating section that extends in a second direction perpendicular to the first direction and includes an insulating film dividing the stacked body; and an insulating element that extends in a third direction perpendicular to the first direction and the second direction and has an upper end whose area is larger than the area of an upper end of the memory film.

Abstract: In one embodiment, a method of manufacturing a semiconductor device includes forming a first film on a substrate. The method further includes performing a first process of forming a concave portion in the first film and forming a second film on a surface of the first film that is exposed in the concave portion by using a first gas containing a carbon element and a fluorine element. The method further includes performing a second process of exposing the second film to a second gas containing a hydrogen element or a fluid generated from the second gas.