Abstract: Provided are a data obtaining section (21) that obtains a time-series data fluctuating in accordance with the plasma conditions, a translation error calculation section (24) that calculates a determinism providing an indicator of whether the time-series data in the plasma are deterministic or stochastic, from the time-series data that have been obtained in the data obtaining unit (21), and an abnormal discharge determination section (26) that determines that the plasma is under the abnormal discharge conditions, in the case that the value representing the determinism calculated in the determinism derivation unit is less than or equal to a given threshold value, during the plasma generation. Examples of the value representing the determinism include translation error or permutation entropy. In the case the permutation entropy is used as a value representing the determinism, a permutation entropy calculation section is provided.

Abstract: Provided are a data obtaining section (21) that obtains a time-series data fluctuating in accordance with the plasma conditions, a translation error calculation section (24) that calculates a determinism providing an indicator of whether the time-series data in the plasma are deterministic or stochastic, from the time-series data that have been obtained in the data obtaining unit (21), and an abnormal discharge determination section (26) that determines that the plasma is under the abnormal discharge conditions, in the case that the value representing the determinism calculated in the determinism derivation unit is less than or equal to a given threshold value, during the plasma generation. Examples of the value representing the determinism include translation error or permutation entropy. In the case the permutation entropy is used as a value representing the determinism, a permutation entropy calculation section is provided.

Abstract: An apparatus for detecting an impedance variable in response to a sensed physical amount of a sensor is provided which comprises an impedance-frequency conversion unit and a counter. The impedance-frequency conversion unit converts the sensor impedance to an oscillation signal a frequency of which corresponds to the sensor impedance. The impedance-frequency conversion unit comprises an impedance-voltage converter for providing a voltage corresponding to the sensor impedance, and a Wien bridge oscillator including an element an impedance of which varies in response to the voltage from the impedance-voltage converter, for generating the oscillation signal. The Wien bridge oscillator is capable of generating a square wave signal as the oscillation signal. The counter counts the number of waves (or wave number) of the oscillation signal in a predetermined time period to output a count value which can be handled as a digital signal.

Abstract: The invention provides a method of detecting an end point, an end point detector, a computer memory product and a chemical mechanical polishing apparatus, in which a physical quantity changing in accordance with proceeding of a process is measured, first time series data and second time series data delayed by a predetermined time from the first time series data are extracted on the basis of the measured Physical quantity, and the end point of the process is detected on the basis of correlation between the first time series data and the second time series data. Thus, the end point can be detected in a shorter period of time without previously performing plural tests.

Abstract: A detection circuit which is capable of outputting a voltage proportional to a static capacitance of a sensor is provided, which comprises a voltage input terminal connected to receive an input voltage and an operational amplifier. The input voltage received at the voltage input terminal is changed between two different reference voltages. An inverting input terminal of the amplifier is connected to the voltage input terminal through a resistor, and a non-inverting input terminal of the amplifier is connected to the voltage input terminal through the sensor capacitance and to one of the reference voltages through a switch. An output voltage of the amplifier is connected to the inverting input terminal through a feedback circuit including a resistor and a switch. The switches are closed and the one of the reference voltages is supplied to the input terminal during an initialization cycle. The switches are opened and the other reference voltage is supplied to the input terminal during a measurement cycle.

Abstract: A vibration wave detector, having a receiver for receiving vibration waves such as sound waves and so on to be propagated in a medium, a resonant unit having a plurality of cantilever resonators each having such a length as to resonate at an individual predetermined frequency, a retaining rod for retaining the resonant unit, a vibration intensity detector for detecting the vibration intensity, for each predetermined frequency, of each of the resonators, by the vibration waves received by the receiver and propagated to the resonant unit by way of the retaining rod.

Abstract: A vibration wave detector, having a receiver for receiving vibration waves such as sound waves and so on to be propagated in a medium, a resonant unit having a plurality of cantilever resonators each having such a length as to resonate at an individual predetermined frequency, a retaining rod for retaining the resonant unit, a vibration intensity detector for detecting the vibration intensity, for each predetermined frequency, of each of the resonators, by the vibration waves received by the receiver and propagated to the resonant unit by way of the retaining rod.

Abstract: This invention comprises a Pd layer formed on an n-type GaAs semiconductor crystals, and a Ge layer being formed on the Pd layer, characterized in that the thickness of the Pd layer is between 300 .ANG. and 1500 .ANG. and the thickness of the Ge layer is between 500 .ANG. and 1500 .ANG..In addition, this invention provides an ohmic electrode forming process for compound semiconductor crystals for forming an ohmic electrode on an n-type GaAs semiconductor crystal, comprising a first layer forming step for forming a palladium (pd) layer on a compound semiconductor crystal; a second layer forming step for forming a germanium layer (Ge) on the Pd layer; and an annealing step for annealing the Pd layer and the Ge layer by a rapid thermal annealing treatment.The Pd layer is formed between 300 .ANG. and 1500 .ANG. in the first layer forming step; the Ge layer is between 500 .ANG. and 1500 .ANG.

Abstract: This invention comprises a Pd layer formed on an n-type GaAs semiconductor crystals, and a Ge layer being formed on the Pd layer, characterized in that the thickness of the Pd layer is between 300 .ANG. and 1500 .ANG. and the thickness of the Ge layer is between 500 .ANG. and 1500 .ANG..And this invention provides an ohmic electrode forming process for compound semiconductor crystals for forming an ohmic electrode on n-type GaAs semiconductor crystals, comprising a first layer forming step for forming a palladium (Pd) layer on a compound semiconductor crystal; a second layer forming step for forming a germanium layer (Ge) on the Pd layer; and a annealing step for annealing the Pd layer and the Ge layer by a rapid thermal annealing treatment.The Pd layer is formed between 300 .ANG. and 1500 .ANG. in the first layer forming step; the Ge layer is between 500 .ANG. and 1500 .ANG.