Abstract: An object of the present invention is to provide a float assembly that can prevent the floats from flipping. The present invention provides a float assembly including a plurality of floats connected together comprising: a filled float having a hollow portion, wherein the hollow portion has a part filled with a filler, and the filled float is arranged at a position facing an assembly periphery surrounding the float assembly.

Abstract: A bearing device is configured to rotatably support a rotational shaft of a rotating machine and includes: a semi-floating bearing supported by a bearing housing; and an anti-rotation pin fixed to the bearing housing and having an insertion portion inserted from an outer peripheral side into an insertion hole formed on an outer surface of the semi-floating bearing. At least one of the insertion hole or the insertion portion has at least one protrusion that protrudes toward the other of the insertion hole or the insertion portion in a plan view perpendicular to an axis of the rotational shaft.

Abstract: A semiconductor device includes an IGBT region in which an IGBT element is formed and an FWD region in which an FWD element is formed. The IGBT region includes a first region and a second region different from the first region. The FWD region and the first region of the IGBT region have a carrier extraction portion that facilitates extraction of carriers injected from a second electrode compared to the second region when a forward bias for causing the FWD element to operate as a diode is applied between a first electrode and the second electrode.

Abstract: A semiconductor device may include a semiconductor substrate. A semiconductor substrate may include a diode region and an IGBT region provided adjacent to the diode region. The IGBT region may include a plurality of first conductive-type low concentration regions provided between a buffer region and a collector region, arranged with intervals therebetween in a direction parallel to the semiconductor substrate, and having a lower impurity concentration than the collector region. The collector region may include a first contact portion that is in contact with the buffer region between the low concentration regions adjacent to each other.

Abstract: A semiconductor device may include a semiconductor substrate. A semiconductor substrate may include a diode region and an IGBT region provided adjacent to the diode region. The IGBT region may include a plurality of first conductive-type low concentration regions provided between a buffer region and a collector region, arranged with intervals therebetween in a direction parallel to the semiconductor substrate, and having a lower impurity concentration than the collector region. The collector region may include a first contact portion that is in contact with the buffer region between the low concentration regions adjacent to each other.

Abstract: A high-voltage transformer includes a core, a secondary coil bobbin surrounding the core, and a secondary winding which is wound on the secondary coil bobbin. The secondary winding includes a first partial secondary winding and a second partial secondary winding which are wound on the secondary coil bobbin. Between the first and second partial secondary windings of the secondary winding, there are provided insulators and parallel-connected diodes. The diodes are arranged in a direction away from the core. These diodes are not required to be resistant to high current, thus achieving a compact high-voltage transformer.

Abstract: A high-voltage transformer includes a core, a coil part, a diode holder, a component block, and a substantially rectangular parallelepiped shaped outer case for accommodating the coil part, the diode holder, and the component block. The coil part includes a coil bobbin into which the core is inserted, and windings wound around the coil bobbin. The diode block includes a plurality of diodes connected to the windings, and a member for holding the diodes. The component block includes electrical components connected to the windings, and a member on which the electrical components are fixedly arranged. The high-voltage transformer is low-profile and small in size.