Abstract: A pattern formation substrate comprising a substrate having thereon a hydrophobic region exhibiting repellency to liquid drops and a hydrophilic line exhibiting affinity with liquid drops. The hydrophilic line has such a surface treatment that upon landing of a liquid drop thereon, the liquid drop moves in the arrowed direction. Thus, attachment of liquid drops to regions to which liquid drops should not be adhered can be prevented, thereby enabling forming a pattern of desired characteristics.

Abstract: A manufacturing method of a thin film transistor of the present invention includes the steps of (i) forming an electrode formation area in which a source electrode and a drain electrode are formed by applying a droplet of an electrode raw material, (ii) applying the droplet of the electrode raw material on drop-on positions located off a forming area of a semiconductor layer and in the electrode formation area, and (iii) forming the source electrode and the drain electrode in the electrode formation area. With this arrangement, it is possible to surely prevent adherence of a splash droplet on a channel section between each electrode, in forming the source electrode and the drain electrode by applying the droplet of the electrode raw material.

Abstract: A manufacturing method of a thin film transistor of the present invention includes the steps of (i) forming an electrode formation area in which a source electrode and a drain electrode are formed by applying a droplet of an electrode raw material, (ii) applying the droplet of the electrode raw material on drop-on positions located off a forming area of a semiconductor layer and in the electrode formation area, and (iii) forming the source electrode and the drain electrode in the electrode formation area. With this arrangement, it is possible to surely prevent adherence of a splash droplet on a channel section between each electrode, in forming the source electrode and the drain electrode by applying the droplet of the electrode raw material.

Abstract: A pattern forming method of the present invention includes the steps of forming, on a substrate before droplets are ejected onto the substrate, a water repelling area, in which a contact angle between the droplet and the target surface is a first contact angle, and a water attracting line, which is adjacent to the water repelling area and in which a second contact angle is smaller than the first contact angle and which is to be the pattern to be formed; and landing droplets onto the target surface such that part of the droplet landed is in a water repelling area and part of the droplet landed is in a water attracting line, the equation (1) is satisfied, D?L×{1+2(cos ?2?cos ?1)}??(1) where D is a droplet diameter, L is a pattern width, ?1 is a first contact angle, and ?2 is a second contact angle. By decreasing the number of discharged droplets, it is possible to prevent increase of a tact time and decrease of an inkjet operating life.

Abstract: A TFT array substrate includes a thin film transistor section in which a gate electrode is formed on a substrate, and a semiconductor layer is formed on the gate electrode via a gate insulation layer. The semiconductor layer of this TFT array substrate has a shape formed by dropping a droplet. Accordingly, it is possible to directly forming a semiconductor layer, or a resist layer for forming the semiconductor layer, by dropping a droplet(s). On this account, the present invention allows the use of an inkjet method, thus reducing costs and numbers of manufacturing processes.

Abstract: A manufacturing method of a thin film transistor of the present invention includes the steps of (i) forming an electrode formation area in which a source electrode and a drain electrode are formed by applying a droplet of an electrode raw material, (ii) applying the droplet of the electrode raw material on drop-on positions located off a forming area of a semiconductor layer and in the electrode formation area, and (iii) forming the source electrode and the drain electrode in the electrode formation area. With this arrangement, it is possible to surely prevent adherence of a splash droplet on a channel section between each electrode, in forming the source electrode and the drain electrode by applying the droplet of the electrode raw material.

Abstract: A pattern formation substrate comprising a substrate having thereon a hydrophobic region exhibiting repellency to liquid drops and a hydrophilic line exhibiting affinity with liquid drops. The hydrophilic line has such a surface treatment that upon landing of a liquid drop thereon, the liquid drop moves in the arrowed direction. Thus, attachment of liquid drops to regions to which liquid drops should not be adhered can be prevented, thereby enabling forming a pattern of desired characteristics.

Abstract: A pattern forming method of the present invention includes the steps of forming, on a substrate before droplets are ejected onto the substrate, a water repelling area, in which a contact angle between the droplet and the target surface is a first contact angle, and a water attracting line, which is adjacent to the water repelling area and in which a second contact angle is smaller than the first contact angle and which is to be the pattern to be formed; and landing droplets onto the target surface such that part of the droplet landed is in a water repelling area and part of the droplet landed is in a water attracting line, the equation (1) is satisfied, D?Lx{1+2(cos ?2?cos ?1)}??(1) where D is a droplet diameter, L is a pattern width, ?1 is a first contact angle, and ?2 is a second contact angle. By decreasing the number of discharged droplets, it is possible to prevent increase of a tact time and decrease of an inkjet operating life.

Abstract: A molecular beam source comprising a crucible having an opening, and a heater mounted to the crucible for evaporating by heating a molecular beam generating material accommodated in the crucible to emit a molecular beam from the opening, wherein the crucible has an accommodating section for accommodating the molecular beam generating material, a bent portion provided between the opening and the accommodating section so that the molecular beam generating material accommodated in the accommodating section does not face the opening directly, and a narrowed portion between the bent portion and the opening.

Abstract: A molecular beam source comprising a crucible having an opening, and a heater mounted to the crucible for evaporating by heating a molecular beam generating material accommodated in the crucible to emit a molecular beam from the opening, wherein the crucible has an accommodating section for accommodating the molecular beam generating material, a bent portion provided between the opening and the accommodating section so that the molecular beam generating material accommodated in the accommodating section does not face the opening directly, and a narrowed portion between the bent portion and the opening.

Abstract: A magnetoresistive effect device is formed by layering a nonmagnetic Co oxide film, a pinned magnetization layer made of Co, a nonmagnetic layer made of Cu, a free magnetization layer made of NiFe in this order on a substrate made of glass or Si. By arranging the nonmagnetic Co oxide film in contact with the pinned magnetization layer, it is possible to produce a magnetoresistive effect device with a high saturation field and a high sensitivity.