Abstract: A pipeline computing apparatus (110) comprises: a computing unit (120) configured as a pipeline; a node monitoring unit (161) that obtains a node processing time; a queue monitoring unit (162) that obtains an accumulated message amount; a priority variable calculating unit (163) that, on the basis of the node processing time and the accumulated message amount in a reception queue in a stage previous to the node, calculates a priority variable of the node; and a time allocating unit (164) that allocates operating time to each of nodes in accordance with the priority variable.

Abstract: A film forming method includes: repeatedly performing a source gas adsorption process including supplying a source gas containing a metal element to form a nitride film on a substrate in a chamber and purging a residual gas, and a nitriding process including supplying a nitriding gas onto the substrate and purging a residual gas; and supplying a hydrazine-based compound gas as a part or all of the nitriding gas.

Abstract: A film forming method includes: repeatedly performing a source gas adsorption process including supplying a source gas containing a metal element to form a nitride film on a substrate in a chamber and purging a residual gas, and a nitriding process including supplying a nitriding gas onto the substrate and purging a residual gas; and supplying a hydrazine-based compound gas as a part or all of the nitriding gas.

Abstract: Provided is a vehicular headlamp including: a first light source that emits a first light serving as a low beam; a second light source that emits a second light serving as a high beam; a projection lens that transmits the first light and the second light; a third light source that emits a third light in response to at least one of an operation of a steering and an operation of a direction indicator; and an optical member that adjusts a light distribution of the third light. The first light source, the second light source, and the third light source share a single heat sink.

Abstract: A lamp includes a plurality of light sources arranged in parallel, a projection lens through which light emitted from the plurality of light sources is transmitted, and a first inter-light source reflector and a second inter-light source reflector which are disposed so as to sandwich a line connecting the light sources adjacent to each other and which are configured to reflect a part of the light emitted from the light sources toward the projection lens.

Abstract: A lamp includes a plurality of light sources arranged in parallel, a projection lens through which light emitted from the plurality of light sources is transmitted, and a first inter-light source reflector and a second inter-light source reflector which are disposed so as to sandwich a line connecting the light sources adjacent to each other and which are configured to reflect a part of the light emitted from the light sources toward the projection lens.

Abstract: A method of forming a Ti film on a substrate disposed in a chamber by introducing a processing gas containing a TiCl4 gas as a Ti source and a H2 gas as a reducing gas and by generating plasma in the chamber, includes introducing an Ar gas as a plasma generation gas into the chamber, converting the Ar gas into plasma to generate Ar ions, and acting the Ar ions on the Ti film to promote desorption of Cl from the Ti film.

Abstract: A method of forming a contact layer on a substrate having a contact hole to make a contact between the substrate and a buried metal material, includes disposing the substrate in a chamber, introducing a Ti source gas, a reducing gas and an Si source gas into the chamber, and converting the Ti source gas, the reducing gas and the Si source gas into plasma to form a TiSix film on the substrate. A portion of the TiSix film in a bottom of the contact hole corresponds to the contact layer.

Abstract: A method of forming a contact layer on a substrate having a contact hole to make a contact between the substrate and a buried metal material, includes disposing the substrate in a chamber, introducing a Ti source gas, a reducing gas and an Si source gas into the chamber, and converting the Ti source gas, the reducing gas and the Si source gas into plasma to form a TiSix film on the substrate. A portion of the TiSix film in a bottom of the contact hole corresponds to the contact layer.

Abstract: A method of forming a Ti film on a substrate disposed in a chamber by introducing a processing gas containing a TiCl4 gas as a Ti source and a H2 gas as a reducing gas and by generating plasma in the chamber, includes introducing an Ar gas as a plasma generation gas into the chamber, converting the Ar gas into plasma to generate Ar ions, and acting the Ar ions on the Ti film to promote desorption of Cl from the Ti film.

Abstract: This invention includes a processing vessel capable of being evacuated to make a vacuum therein and a stage placed in the processing vessel capable of supporting an object to be processed thereon. A guide ring is placed on or above the stage so as to surround the outer circumference of the object to be processed mounted on the stage, is adapted to guide the object to be processed onto the stage when mounting the object to be processed onto the stage. A particle generation preventing space is formed between an inner peripheral part of the lower surface of the guide ring and the upper surface of the stage.

Abstract: A substrate treatment device includes: a treatment chamber in which a substrate is to be placed; a supply system configured to supply at least two kinds of treatment gases into the treatment chamber; an exhaust system having a pump, configured to exhaust the treatment gases from the treatment chamber; and a capturing unit interposed between the treatment chamber and the pump and containing fine grains, configured to capture by the fine grains at least one kind of the treatment gas exhausted from the treatment chamber.

Abstract: This invention includes a processing vessel capable of being evacuated to make a vacuum therein and a stage placed in the processing vessel capable of supporting an object to be processed thereon. A guide ring is placed on or above the stage so as to surround the outer circumference of the object to be processed mounted on the stage, is adapted to guide the object to be processed onto the stage when mounting the object to be processed onto the stage. A particle generation preventing space is formed between an inner peripheral part of the lower surface of the guide ring and the upper surface of the stage.

Abstract: A CVD film forming method, includes the steps of placing a silicon wafer on a susceptor equipped with a heating member therein which is, situated in a chamber, evacuating the chamber, pre-annealing the silicon wafer while keeping pressure in the chamber substantially constant by supplying an anneal gas and a purge gas into the chamber and while exhausting gases from the chamber at a fixed rate, and heating the silicon wafer, there forming a metal film on the silicon wafer by CVD while keeping pressure in the chamber substantially constant by supplying a process gas into the chamber along with a purge gas with a controllable total supply rate while exhausting these gases from the chamber at a fixed rate, and heating the silicon wafer by the heating member, to follow immediately after the pre-annealing step, and then after-annealing the silicon wafer by heating the silicon wafer while maintaining pressure in the chamber substantially constant, by stopping supply of the process gas, supplying an anneal gas and a

Abstract: A method for forming a CVD film, comprising the steps of loading at least one object to be processed into a processing chamber and positioning the object on a support base in the processing chamber, after positioning the object in the processing chamber, introducing a process gas from a corresponding gas supply source via a corresponding gas introducing pipe into the processing chamber and forming a film by a chemical vapor deposition method on the object in the processing chamber, after forming the film on the object, unloading the object from the processing chamber, after unloading the object from the processing chamber, dry-cleaning an inside of the processing chamber, and after dry-cleaning the inside of the processing chamber, introducing an inert gas via a corresponding gas introducing pipe into the chamber to purge those particles deposited as a residue in the gas introducing pipe and inside of the chamber.