Abstract: A semiconductor device includes a semiconductor substrate; and a temperature sense diode fixed on the semiconductor substrate. The temperature sense diode includes: an anode electrode; a p-type semiconductor layer being in contact with the anode electrode; an n-type semiconductor layer being in contact with the p-type semiconductor layer; and a cathode electrode being in contact with the n-type semiconductor layer; and the anode electrode. The p-type semiconductor layer, the n-type semiconductor layer, and the cathode electrode are stacked along a thickness direction of the semiconductor substrate. An electric resistivity of the anode electrode or the cathode electrode whichever is located closer to the semiconductor substrate is lower than an electric resistivity of the n-type semiconductor layer and an electric resistivity of the p-type semiconductor layer.

Abstract: A semiconductor device includes a semiconductor substrate; and a temperature sense diode fixed on the semiconductor substrate. The temperature sense diode includes: an anode electrode; a p-type semiconductor layer being in contact with the anode electrode; an n-type semiconductor layer being in contact with the p-type semiconductor layer; and a cathode electrode being in contact with the n-type semiconductor layer; and the anode electrode. The p-type semiconductor layer, the n-type semiconductor layer, and the cathode electrode are stacked along a thickness direction of the semiconductor substrate. An electric resistivity of the anode electrode or the cathode electrode whichever is located closer to the semiconductor substrate is lower than an electric resistivity of the n-type semiconductor layer and an electric resistivity of the p-type semiconductor layer.