Patents by Inventor Takayasu Horasawa

Takayasu Horasawa has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor apparatus and fabrication method thereof
    Patent number: 8338954
    Abstract: A semiconductor apparatus includes an aluminum electrode film formed on a semiconductor chip; and a nickel plated layer formed on the aluminum electrode film, wherein a concentration of sodium and potassium present in the nickel plated layer and at an interface between the nickel plated layer and the aluminum electrode film is 3.20×1014 atoms/cm2 or less.
    Type: Grant
    Filed: August 18, 2010
    Date of Patent: December 25, 2012
    Assignees: Fuji Electric Co., Ltd., C. Uyemura & Co., Ltd.
    Inventors: Hitoshi Fujiwara, Takayasu Horasawa, Kenichi Kazama
  • Method of manufacturing a semiconductor device
    Patent number: 8198104
    Abstract: A method of manufacturing a semiconductor device on a semiconductor substrate, includes the steps of forming a first metal film on a front surface of the semiconductor substrate; forming a second metal film on the surface of the first metal film; activating a surface of the second metal film to provide an activated surface; and forming a plated film on the activated surface by a wet plating method in a plating bath that includes a reducing agent that is oxidized during plating and that has a rate of oxidation, wherein the second metal film is a metal film mainly composed of a first substance that enhances the rate of oxidation of the reducing agent in the plating bath. Wet plating is preferably an electroless process.
    Type: Grant
    Filed: March 22, 2010
    Date of Patent: June 12, 2012
    Assignee: Fuji Electric Co., Ltd.
    Inventors: Yuichi Urano, Takayasu Horasawa
  • SEMICONDUCTOR APPARATUS AND FABRICATION METHOD THEREOF
    Publication number: 20110042816
    Abstract: A semiconductor apparatus includes an aluminum electrode film formed on a semiconductor chip; and a nickel plated layer formed on the aluminum electrode film, wherein a concentration of sodium and potassium present in the nickel plated layer and at an interface between the nickel plated layer and the aluminum electrode film is 3.20×1014 atoms/cm2 or less.
    Type: Application
    Filed: August 18, 2010
    Publication date: February 24, 2011
    Applicants: FUJI ELECTRIC SYSTEMS CO., LTD., C. UYEMURA & CO., LTD.
    Inventors: Hitoshi Fujiwara, Takayasu Horasawa, Kenichi Kazama
  • Method of manufacturing a semiconductor device
    Publication number: 20100240213
    Abstract: A method of manufacturing a semiconductor device on a semiconductor substrate, includes the steps of forming a first metal film on a front surface of the semiconductor substrate; forming a second metal film on the surface of the first metal film; activating a surface of the second metal film to provide an activated surface; and forming a plated film on the activated surface by a wet plating method in a plating bath that includes a reducing agent that is oxidized during plating and that has a rate of oxidation, wherein the second metal film is a metal film mainly composed of a first substance that enhances the rate of oxidation of the reducing agent in the plating bath. Wet plating is preferably an electroless process.
    Type: Application
    Filed: March 22, 2010
    Publication date: September 23, 2010
    Applicant: FUJI ELECTRIC SYSTEMS CO., LTD.
    Inventors: Yuichi Urano, Takayasu Horasawa