Abstract: A film deposition apparatus according to an embodiment is a film deposition apparatus including a depressurized processing vessel in which a film deposition chamber and a cooling chamber communicating with the film deposition chamber are provided, the film deposition chamber being configured to perform vacuum deposition on a substrate, the cooling chamber being configured to cool the substrate. The cooling chamber includes a passage through which the substrate moves, and a cooling device placed on an inner wall of the processing vessel, the cooling device including a surface-area expansion structure portion facing the passage and a refrigerant passage for refrigerant. The surface-area expansion structure portion includes a plurality of projecting portions provided to project toward the passage from the inner wall of the processing vessel. The refrigerant passage is formed along the projecting portions.

Abstract: A film forming apparatus includes a cylindrical evaporation source, an electrode, and a gas passage. The evaporation source is composed of metal and includes an internal space for accommodating a workplace. The electrode is arranged in the internal space of the evaporation source, The gas passage supplies gas to the internal space of the evaporation source from a space outside the evaporation source. The gas passage includes an end portion located in the internal space. The end portion of the gas passage includes a first section composed of a first material and a second section composed of a second material. The first material and the second material have different thermal expansion coefficients.

Abstract: A PCVD apparatus includes a waveguide member which supports the workpiece with a portion of the waveguide member positioned in a reactor and causes microwaves output from a high-frequency output device to propagate to the workpiece. In a process of gradually increasing an intensity of the microwaves propagating to the workpiece through the waveguide member from “0”, the intensity of the microwaves output from the high-frequency output device when step-up of a bias current of the workpiece occurs is referred to as a first intensity, and in a process of gradually increasing the intensity of the microwaves from the first intensity, the intensity of the microwaves when step-up of the bias current occurs again is referred to as a second intensity. During film formation, the microwaves having an intensity of higher than the first intensity and lower than the second intensity are output from the high-frequency output device.

Abstract: A PCVD apparatus includes a waveguide member which supports the workpiece with a portion of the waveguide member positioned in a reactor and causes microwaves output from a high-frequency output device to propagate to the workpiece. In a process of gradually increasing an intensity of the microwaves propagating to the workpiece through the waveguide member from “0”, the intensity of the microwaves output from the high-frequency output device when step-up of a bias current of the workpiece occurs is referred to as a first intensity, and in a process of gradually increasing the intensity of the microwaves from the first intensity, the intensity of the microwaves when step-up of the bias current occurs again is referred to as a second intensity. During film formation, the microwaves having an intensity of higher than the first intensity and lower than the second intensity are output from the high-frequency output device.

Abstract: A plasma chemical vapor deposition device includes a chamber, a first conductor having an elongated shape, a second conductor having a tubular shape, a high-frequency output device, and a direct-current power supply. A first connecting portion of the first conductor with the high-frequency output device and a second connecting portion of the first conductor with the direct-current power supply are both placed outside the chamber. A distance from one end of the first conductor to the first connecting portion is shorter than a distance from the one end of the first conductor to the second connecting portion. An impedance change portion is provided between the first connecting portion and the second connecting portion in the first conductor, the impedance change portion having an impedance different from an impedance between the one end of the first conductor and the first connecting portion.

Abstract: A film forming device includes a cylindrical evaporation source, closing members, and an auxiliary electrode. The cylindrical evaporation source is configured to accommodate a workpiece in an internal space of the cylindrical evaporation source. The cylindrical evaporation source is configured to discharge ions from the cylindrical evaporation source by arc discharge such that the ions are deposited on a surface of the workpiece. The closing members close the internal space. The auxiliary electrode is disposed along an inner wall surface of the cylindrical evaporation source. The auxiliary electrode is configured to be grounded or to be applied with a positive voltage such that electrons of the internal space flow to the auxiliary electrode.

Abstract: A high-frequency wave supplying structure includes a center conductor that extends in a specified direction, an outer conductor that is coaxial with the center conductor and grounded, and a cylindrical insulating member that is provided between the center conductor and the outer conductor. The distal end of the center conductor is a support portion that supports a workpiece W. A shield member is provided outward of the outer conductor to be coaxial with the outer conductor and the center conductor. The distal end of the shield member is located closer to the support portion in the specified direction than the distal end of the outer conductor. The insulating member includes a protruding portion that protrudes toward the support portion from an opening of the outer conductor. The protruding portion is opposed to the distal end of the outer conductor in the specified direction.

Abstract: An ultrasonic cleaner is provided. The ultrasonic cleaner includes: a first ultrasonic vibrator configured to generate a first ultrasonic wave; a first oscillator configured to drive the first ultrasonic vibrator; a wash tank configured to store a detergent solution; and an attenuation mechanism configured to damp vibration of the wash tank. The wash tank includes a parabolic surface which is a recessed surface facing a vibration surface of the first ultrasonic vibrator, and is configured to reflect the first ultrasonic wave to a focal position where an object to be cleaned is placed. The vibration of the wash tank is generated by the first ultrasonic wave impinging on the wash tank.

Abstract: A film forming apparatus includes a cylindrical evaporation source, an electrode, and a gas passage. The evaporation source is composed of metal and includes an internal space for accommodating a workplace. The electrode is arranged in the internal space of the evaporation source, The gas passage supplies gas to the internal space of the evaporation source from a space outside the evaporation source. The gas passage includes an end portion located in the internal space. The end portion of the gas passage includes a first section composed of a first material and a second section composed of a second material. The first material and the second material have different thermal expansion coefficients.

Abstract: A high-frequency wave supplying structure includes a center conductor that extends in a specified direction, an outer conductor that is coaxial with the center conductor and grounded, and a cylindrical insulating member that is provided between the center conductor and the outer conductor. The distal end of the center conductor is a support portion that supports a workpiece W. A shield member is provided outward of the outer conductor to be coaxial with the outer conductor and the center conductor. The distal end of the shield member is located closer to the support portion in the specified direction than the distal end of the outer conductor. The insulating member includes a protruding portion that protrudes toward the support portion from an opening of the outer conductor. The protruding portion is opposed to the distal end of the outer conductor in the specified direction.

Abstract: An arc discharge generation device energizes an evaporation source with the power supply device so that the evaporation source functions as a negative electrode to have a striker chip contact the evaporation source and then separate the striker chip from the evaporation source to generate an arc discharge in the chamber. When extinguishing the arc discharge generated in the chamber, the arc discharge generation device has the striker chip contact the evaporation source and de-energizes the evaporation source with the power supply device in a situation in which the striker chip is in contact with the evaporation source.

Abstract: A PCVD apparatus includes a waveguide member which supports the workpiece with a portion of the waveguide member positioned in a reactor and causes microwaves output from a high-frequency output device to propagate to the workpiece. In a process of gradually increasing an intensity of the microwaves propagating to the workpiece through the waveguide member from “0”, the intensity of the microwaves output from the high-frequency output device when step-up of a bias current of the workpiece occurs is referred to as a first intensity, and in a process of gradually increasing the intensity of the microwaves from the first intensity, the intensity of the microwaves when step-up of the bias current occurs again is referred to as a second intensity. During film formation, the microwaves having an intensity of higher than the first intensity and lower than the second intensity are output from the high-frequency output device.

Abstract: A plasma chemical vapor deposition device includes an adhesion suppressing sheet suppressing a processing gas from adhering to an inner wall of a reactor. The adhesion suppressing sheet is arranged between a placement position of a workpiece and the inner wall of the reactor. The adhesion suppressing sheet is a fabric that includes first fiber bundles and second fiber bundles that extend in directions different from each other. In the first fiber bundles, front side portions and rear side portions are alternately arranged in a first direction. In the second fiber bundles, front side portions and rear side portions are alternately arranged in a second direction.

Abstract: An ultrasonic cleaner is provided. The ultrasonic cleaner includes: a first ultrasonic vibrator configured to generate a first ultrasonic wave; a first oscillator configured to drive the first ultrasonic vibrator; a wash tank configured to store a detergent solution; and an attenuation mechanism configured to damp vibration of the wash tank. The wash tank includes a parabolic surface which is a recessed surface facing a vibration surface of the first ultrasonic vibrator, and is configured to reflect the first ultrasonic wave to a focal position where an object to be cleaned is placed. The vibration of the wash tank is generated by the first ultrasonic wave impinging on the wash tank.

Abstract: A plasma chemical vapor deposition device includes a chamber, a first conductor having an elongated shape, a second conductor having a tubular shape, a high-frequency output device, and a direct-current power supply. A first connecting portion of the first conductor with the high-frequency output device and a second connecting portion of the first conductor with the direct-current power supply are both placed outside the chamber. A distance from one end of the first conductor to the first connecting portion is shorter than a distance from the one end of the first conductor to the second connecting portion. An impedance change portion is provided between the first connecting portion and the second connecting portion in the first conductor, the impedance change portion having an impedance different from an impedance between the one end of the first conductor and the first connecting portion.

Abstract: Cascaded buck boost DC to DC conversion systems, controllers and methods are presented, in which a buck converter stage is pulse width modulated in a first mode and a boost converter stage is pulse width modulated in a second mode, with the pulse width modulation using a first one of peak current control in valley current control in the first mode, and using the other of peak current control in valley current control in the second mode, and operation is switched between the first and second modes based on an on-time of a low side driver switch of the buck converter stage or the boost converter stage.

Abstract: A DC to DC converter includes an inductor having a first terminal and a second terminal, the first terminal coupled to an input of the DC to DC converter and the second terminal being coupled to an output of the DC to DC converter. A first switch is coupled between the second terminal and a current sensor. The switch controls current flow through the inductor and generates an inductor current signal representative of the current flow through the sensor. A slope generator generates a slope compensation signal. A first mixer adds the slope compensation signal to the inductor current signal. A sample and hold circuit samples a portion of the slope compensation signal. A second mixer subtracts the sampled portion of the slope compensation signal from the output of the first mixer, wherein inductor charging is terminated in response to the output of the first mixer.

Abstract: A film forming device includes a cylindrical evaporation source, closing members, and an auxiliary electrode. The cylindrical evaporation source is configured to accommodate a workpiece in an internal space of the cylindrical evaporation source. The cylindrical evaporation source is configured to discharge ions from the cylindrical evaporation source by arc discharge such that the ions are deposited on a surface of the workpiece. The closing members close the internal space. The auxiliary electrode is disposed along an inner wall surface of the cylindrical evaporation source. The auxiliary electrode is configured to be grounded or to be applied with a positive voltage such that electrons of the internal space flow to the auxiliary electrode.

Abstract: Cascaded buck boost DC to DC conversion systems, controllers and methods are presented, in which a buck converter stage is pulse width modulated in a first mode and a boost converter stage is pulse width modulated in a second mode, with the pulse width modulation using a first one of peak current control in valley current control in the first mode, and using the other of peak current control in valley current control in the second mode, and operation is switched between the first and second modes based on an on-time of a low side driver switch of the buck converter stage or the boost converter stage.

Abstract: A method of manufacturing a battery current collector foil includes: applying wet etching (electrolytic etching) to a surface of a metal foil (aluminum foil) (step S1); and forming a conductive coating (carbon coating) on the surface of the metal foil (aluminum foil 33), which has been subjected to the wet etching, by vapor depostion (AIP) (step S2).