Abstract: A film-forming surface reforming method includes the steps of bringing a gas or an aqueous solution containing ammonia, hydrazine, an amine, an amino compound or a derivative thereof into contact with the film-forming surface before an insulating film is formed on the film-forming surface, and bringing a gas or an aqueous solution containing Hydrogen peroxide, ozone, Oxygen, nitric acid, sulfuric acid or a derivative thereof into contact with the film-forming surface.

Abstract: There is provided a semiconductor manufacturing system and a method for cleaning the same. Silicon oxide adhering to Elements, which constitute the system, is removed by a cleaning gas containing an HF gas and a water vapor together with by heating the elements.

Abstract: There is provided a film-forming surface reforming method that comprises the steps of bringing a gas or an aqueous solution containing ammonia, hydrazine, amine, amino compound or their derivative into contact with a film-forming surface before an insulating film is formed on the film-forming surface of a substrate, and

Abstract: Disclosed is a method for modifying a film-forming surface of a substrate, which is capable removing a base surface dependency in forming a film on the film-forming surface of the substrate prior to formation of a film by a thermal CVD method using a reactant gas containing an ozone-containing gas containing ozone (O3) in oxygen (O2) and Tetra-Ethyl-Ortho-Silicate. The method comprises the step of modifying the film-forming surface 12a of the substrate 102 by allowing any one of ammonia, hydrazine, an amine, gases thereof and aqueous solutions thereof to contact with the surface of the substrate before forming an insulating film 13 on the surface 12a of the substrate 102.

Abstract: There is provided a semiconductor device manufacturing system capable of carrying out resist stripping or surface pre-treatment of a substrate by use of a gas such as chlorosulfuric acid with high reactivity The manufacturing system comprises a process vessel 101 formed integrally of a process chamber 1 for treating respective surfaces of substrates 202 with a chemical vapor and a chemical storage chamber 2 for storing chemical for generating the chemical vapor, and a chemical heating means 5 for heating the chemicals stored in the chemical storage chamber 2 to evaporation.

Abstract: A method of processing waste gas exhausted from chemical vapor deposition equipment, which entails:a) contacting a waste gas containing viscous substances with a filtering aid agent,b) passing the waste gas containing the viscous substances exhausted from the chemical vapor deposition equipment, and which has been contacted with the filtering aid agent, through a filtering and dust collecting unit, whereby the viscous substances are condensed with the filtering aid agent on the filtering and dust collecting unit, andc) removing the condensed matter from the surface of the filter, thereby preventing clogging thereof.

Abstract: A process for producing a protein-rich fish meal and a fish oil which comprises treating fish bodies with a protease acting at a relatively low temperature to give a slurry and dividing and drying said slurry at a relatively low temperature. The products thus obtained scarcely undergo thermal denaturation and contain a large amount of partially decomposed protein. Thus they are highly useful as a protein source for, e.g., feeds, baits and pet foods.