Abstract: What is provided is a transistor including a gate electrode, a gate insulating film, a semiconductor film, a source electrode, and a drain electrode, in which the gate insulating film is a laminated film in which a SiOx film and a SiCyNz film are alternately formed, the total number of films constituting the laminated film is 3 or more and 18 or less, and the thickness of each film constituting the laminated film is 25 nm or more and 150 nm or less.

Abstract: A method for forming a sealing film, in which a buffer layer and a barrier layer whose density is higher than that of the buffer layer are alternately formed on a substrate, includes forming a first buffer layer on a surface of the substrate, forming a first barrier layer on a surface of the first buffer layer, and forming a second buffer layer on a surface of the first barrier layer. A ratio of a thickness of a portion of the first buffer layer in a thickness direction of the substrate relative to a thickness of a portion of the first buffer layer in an inclined direction that is inclined with respect to the thickness direction is closer to 1 than a ratio of a thickness of a portion of the second buffer layer in the thickness direction relative to a thickness of a portion of the second buffer layer in the inclined direction.

Abstract: A thin-film forming device forms a thin film on a strip-shaped substrate by subjecting the strip-shaped substrate to a surface treatment while conveying the strip-shaped substrate in a state of being laid along an outer peripheral face of a main roll. The thin-film forming device comprises: a main roll chamber accommodating the main roll; a plurality of film formation chambers arranged in a peripheral direction of the main roll, the film formation chambers having partitions disposed radially outward of the main roll; and a main roll cover covering the outer peripheral face of the main roll over which the strip-shaped substrate travels, the main roll cover being provided to the partitions, the main roll cover having a film formation chamber communication component that communicates with the film formation chambers.

Abstract: In an LED module, modes to solve such a problem that a loss in the output of light discharged into the atmosphere occurs are embodied. Specifically, in an LED module in which an LED chip is sealed with a sealing resin, a surface of the sealing resin is covered with a thin film, the thin film is made of a material having a smaller linear expansion coefficient than the sealing resin, and an irregular surface is provided on a surface of the thin film such that light from the LED chip is multiply reflected.

Abstract: In an LED module, modes to solve such a problem that a loss in the output of light discharged into the atmosphere occurs are embodied. Specifically, in an LED module in which an LED chip is sealed with a sealing resin, a surface of the sealing resin is covered with a thin film, the thin film is made of a material having a smaller linear expansion coefficient than the sealing resin, and an irregular surface is provided on a surface of the thin film such that light from the LED chip is multiply reflected.

Abstract: A method for forming a sealing film, in which a buffer layer and a barrier layer whose density is higher than that of the buffer layer are alternately formed on a substrate, includes forming a first buffer layer on a surface of the substrate, forming a first barrier layer on a surface of the first buffer layer, and forming a second buffer layer on a surface of the first barrier layer. A ratio of a thickness of a portion of the first buffer layer in a thickness direction of the substrate relative to a thickness of a portion of the first buffer layer in an inclined direction that is inclined with respect to the thickness direction is closer to 1 than a ratio of a thickness of a portion of the second buffer layer in the thickness direction relative to a thickness of a portion of the second buffer layer in the inclined direction.

Abstract: A thin-film forming device forms a thin film on a strip-shaped substrate by subjecting the strip-shaped substrate to a surface treatment while conveying the strip-shaped substrate in a state of being laid along an outer peripheral face of a main roll. The thin-film forming device comprises: a main roll chamber accommodating the main roll; a plurality of film formation chambers arranged in a peripheral direction of the main roll, the film formation chambers having partitions disposed radially outward of the main roll; and a main roll cover covering the outer peripheral face of the main roll over which the strip-shaped substrate travels, the main roll cover being provided to the partitions, the main roll cover having a film formation chamber communication component that communicates with the film formation chambers.

Abstract: A chemical vapor deposited film includes silicon atoms, oxygen atoms, carbon atoms, and hydrogen atoms. The chemical vapor deposited film is formed by a plasma CVD method such that the concentration of the oxygen atoms is 10-35% by element.

Abstract: A solar battery module has a structure in which a solar battery cell formed by a transparent electrode, a power generating element, and a back electrode is formed on a substrate, and it is sealed with a resin material such as EVA. However, there has been a problem that water enters from a gap between the substrate and a resin sealing material, thereby resulting in the corrosion of the resin or the solar battery cell. A barrier layer made of inorganic substances having portions in contact with the substrate and the second electrode is provided. Here, the barrier layer is formed by laminating at least SiO2 and an inorganic layer having a lower density than SiO2, and the film having a lower density than SiO2 is directly formed on the substrate and the second electrode.

Abstract: A chemical vapor deposited film includes silicon atoms, oxygen atoms, carbon atoms, and hydrogen atoms. The chemical vapor deposited film is formed by a plasma CVD method such that the concentration of the oxygen atoms is 10-35% by element.

Abstract: A silicon-containing film includes a first chemical vapor deposition layer and a second chemical vapor deposition layer. The first chemical vapor deposition layer includes elemental silicon. The first chemical vapor deposition layer is formed by a plasma CVD method such that oxygen concentration is greater than or equal to 0% by element and less than 10% by element. The second chemical vapor deposition layer includes elemental silicon. The second chemical vapor deposition layer is formed by the plasma CVD method such that oxygen concentration is greater than 35% by element and less than or equal to 70% by element. A ratio of the thickness of the second chemical vapor deposition layer relative to the thickness of the first chemical vapor deposition layer is 1.5-9.

Abstract: A solar battery module has a structure in which a solar battery cell formed by a transparent electrode, a power generating element, and a back electrode is formed on a substrate, and it is sealed with a resin material such as EVA. However, there has been a problem that water enters from a gap between the substrate and a resin sealing material, thereby resulting in the corrosion of the resin or the solar battery cell. A barrier layer made of inorganic substances having portions in contact with the substrate and the second electrode is provided. Here, the barrier layer is formed by laminating at least SiO2 and an inorganic layer having a lower density than SiO2, and the film having a lower density than SiO2 is directly formed on the substrate and the second electrode.

Abstract: The present invention provides an antifouling coating material which can be used to form an antifouling coating film excellent in long-term antifouling performance and physical properties, and which is excellent in long-term storage stability. The present invention provides an antifouling coating composition containing a copolymer [A] obtained by copolymerizing a monomer represented by a general formula (1) (wherein, X represents acryloyloxy, methacryloyloxy, crotonoyloxy, or isocrotonoyloxy, R1 represents a hydrogen atom or methyl, and R2 represents an alkyl group having a carbon number of 1 to 6), and a polymerizable monomer represented by a general formula (2) (wherein, R3 represents a hydrogen atom or methyl, R4 represents an alkyl group having a carbon number of 1 to 10, or an alkyl group having a carbon number of 2 to 5 to which an alkoxy group having a carbon number of 1 to 4 is bonded.).

Abstract: An object of the present invention is to provide a composition for forming an environment friendly antifouling coating film that is unlikely to cause a hairline crack and like coating film defects even when immersed in seawater for a long time, and that prevents or inhibits attachment of slime.

Abstract: An object of the present invention is to provide a composition for forming an environment friendly antifouling coating film that is unlikely to cause a hairline crack and like coating film defects even when immersed in seawater for a long time, and that prevents or inhibits attachment of slime.

Abstract: An object of the present invention is to provide a composition for forming an environment friendly antifouling coating film that can effectively exhibit an antifouling effect in seawater for a long period of time and furthermore exhibits a small temperature dependency of the coating film dissolving amount.

Abstract: An object of the present invention is to provide a composition for forming an environment friendly antifouling coating film that can effectively exhibit an antifouling effect in seawater for a long period of time and furthermore exhibits a small temperature dependency of the coating film dissolving amount.

Abstract: A wiring circuit board and a method of producing the same are provided in which a desired pattern of wiring is provided at higher density while permitting no overflow from the grooves of an electroless plating catalyst containing solution and an electric conductor forming liquid such as silver ink. The pattern of electric conductor is deposited by applying the electric conductor forming liquid into the grooves provided in a substrate and distributing the same along the grooves with the action of capillarity. The method starts with patterning the grooves in the surface of the substrate (S1), applying the electric conductor forming liquid into the grooves (S2), and coating the surface of the substrate with a layer of repellent liquid which is lower in the affinity with the electric conductor forming liquid (S3). This is followed by cleaning at least the grooves (S4) and then filling the grooves with the electric conductor forming liquid once again (S5).