Abstract: This invention is directed to a method for the production of a dislocation-free silicon single crystal by the Czochralski method. This method attains growth of the main body part of the dislocation-free silicon single crystal by immersing a seed crystal in a melt of silicon and then pulling the seed crystal without recourse to the necking. The seed crystal thus used is a dislocation-free silicon single crystal. The horizontal maximum length of the part of the seed crystal being immersed in the melt at the time of completing the immersion of the seed crystal in the melt is not less than 5 mm. The immersing rate of the seed crystal in the melt is not more than 2.8 mm/min and the part of the seed crystal to be immersed in the melt is a crystal as grown.

Abstract: A clear-mold solid-state imaging device using a charge coupled device, in which a solid-state imaging device is molded with a transparent resin. The solid-state imaging device includes a surface having a light receiving section; a light shielding film provided over the surface; a transparent passivation film for protecting the light shielding film; and a moving ion blocking layer provided between the transparent passivation film and the transparent resin.

Abstract: A solid state color imaging sensor develops a green color signal and a red color signal in the first line of an odd field, and develops a green color signal and a blue color signal in the second line of the odd field. A first one line (1H) delay circuit is included in a signal processing circuit so as to produce a high frequency component signal of a luminance signal. A second one line (1H) delay circuit is included in the signal processing circuit so as to produce a low frequency component of the luminance signal and the color information signal.