Abstract: A solid electrolyte glass at least including: at least one alkali metal element; a phosphorus (P) element; a sulfur (S) element; and one or more halogen elements selected from I, Cl, Br and F; wherein the solid electrolyte glass has two exothermic peaks that are separated from each other in a temperature range of 150° C. to 350° C. as determined by differential scanning calorimetry (in a dry nitrogen atmosphere at a temperature-elevating speed of 10° C./min from 20 to 600° C.).

Abstract: A method for producing an ionic conductive substance, including a step of contacting raw materials in a solvent, wherein the raw materials include: one or more compounds selected from phosphorus sulfide, germanium sulfide, silicon sulfide and boron sulfide; a sulfide of a metal element belonging to group I or group II of the periodic table; and a halogen compound represented by MwXx wherein M is Li, B, Na, K, Rb, Cs, Ca, Mg, Sr, Ba, Al, Si, P, S, Ge, As, Se, Sn, Sb, Te, Pb or Bi, w is 1 or 2, X is F, Cl, Br or I, and x is an arbitrary integer selected from 1 to 10.

Abstract: A positive electrode mix including a solid electrolyte and a sulfur-based active material, wherein the solid electrolyte comprises a Li element or a Na element; a S element; and a halogen element selected from the group consisting of I, Br, Cl and F.

Abstract: A solid electrolyte including an alkali metal element, phosphorous, sulfur and halogen as constituent components.

Abstract: An organic thin film transistor including a substrate having thereon at least three terminals of a gate electrode, a source electrode and a drain electrode, an insulator layer and an organic semiconductor layer, with a current between a source and a drain being controlled upon application of a voltage to the gate electrode, wherein the foregoing organic semiconductor layer includes a specified organic compound having an aromatic hydrocarbon group or an aromatic heterocyclic group and an acetylene structure in the center thereof; an organic thin film light emitting transistor in which in the organic thin film transistor, light emission is obtained utilizing a current flowing between the source and the drain, and the light emission is controlled upon application of a voltage to the gate electrode; an organic thin film transistor which is made high with respect to the response speed and has a large ON/OFF ratio by a compound suitable therefor; and an organic film light emitting transistor utilizing it, and a com