Abstract: When a fourth sun gear is held stationary so as to be unrotatable, a Ravigneaux type planetary gear mechanism transfers power, which has been transferred from an input shaft to a third carrier, to a third sun gear and a third ring gear with the speed of the power increased such that the rotational speed of the third sun gear is higher than the rotational speed of the third ring gear. A clutch, which corresponds to the third sun gear which rotates at a higher speed than that of the third ring gear, is disposed between the Ravigneaux type planetary gear mechanism and a second planetary gear disposed in proximity to the Ravigneaux type planetary gear mechanism with respect to a first planetary gear.

Abstract: An automatic transmission apparatus that includes a first planetary gear mechanism, a second planetary gear mechanism, a third planetary gear mechanism, a fourth planetary gear mechanism, a first coupling element, a second coupling element, a third coupling element, a fourth coupling element, a first clutch, a second clutch, a third clutch, a fourth clutch, a first brake and a second brake.

Abstract: An automatic transmission 20 includes: a Simpson type complex planetary gear train 25 including single pinion type first and second planetary gears 21 and 22 and single pinion type third and fourth planetary gears 23 and 24; first through fourth clutches C1 to C4; and first and second brakes B1 and B2. A first carrier 21c of the first planetary gear 21 is coupled to an input shaft 20i. A first ring gear 21r of the first planetary gear 21 is selectively connected to an output shaft 20o by the first clutch C1.

Abstract: A display unit includes a plurality of first electrodes provided to respective pixels; an insulating layer having an opening facing each of the first electrodes and having an overhang at an edge of the opening; a charge injection-transport layer being cut or having higher resistance at the overhang of the insulating layer to exhibit one or both of a charge injection property and a charge transport property; an organic layer including one light-emitting layer or a plurality of light-emitting layers common to all of the pixels; and a second electrode formed on an entire surface of the organic layer, the first electrodes, the insulating layer, the charge injection-transport layer, the organic layer, and the second electrode being disposed in this order from a substrate side.

Abstract: An automatic transmission that shifts power applied to an input member and outputs the shifted power to an output member, the automatic transmission including a first planetary gear mechanism, a third planetary gear mechanism, a compound planetary gear mechanism, a first clutch, a second clutch, a third clutch, a fourth clutch a first brake, and a second brake.

Abstract: An automatic transmission that shifts power applied to an input member and outputs the shifted power to an output member, the automatic transmission including a first planetary gear mechanism, a second planetary gear mechanism, a third planetary gear mechanism, a fourth planetary gear mechanism, a first coupling element, a second coupling element, a third coupling element, a fourth coupling element, a first clutch, a second clutch, a third clutch, a fourth clutch, a first brake and a second brake.

Abstract: A display unit includes a plurality of first electrodes provided to respective pixels; an insulating layer having an opening facing each of the first electrodes and having an overhang at an edge of the opening; a charge injection-transport layer being cut or having higher resistance at the overhang of the insulating layer to exhibit one or both of a charge injection property and a charge transport property; an organic layer including one light-emitting layer or a plurality of light-emitting layers common to all of the pixels; and a second electrode formed on an entire surface of the organic layer, the first electrodes, the insulating layer, the charge injection-transport layer, the organic layer, and the second electrode being disposed in this order from a substrate side.

Abstract: The present invention is aimed to provide a carrier assembly which can be made small in size while securing a sufficient fixing strength between a first carrier plate and a second carrier plate. The second carrier plate (8) has a plurality of connection elements (23) bent toward the first carrier plate (7) to weld and fix the outwardly projected end portions (23b) of the connection elements with the outwardly projected end portion of the first carrier plate (7) by electron beam welding. The connection elements each have a base portions (23a) formed with a notch (28). The notch (28) thus formed makes a gap S between the base portion of the connection element and the corner portion (29) of the pinion gear.

Abstract: In a power transmission device, a breather chamber having an opening on its one end side and extending coaxially with the countershaft is formed in a countershaft that transmits power from an output shaft of an automatic transmission to a differential mechanism. An inner end of a vent pipe placed so as to extend through a transmission case and that includes the inner end and an outer end each having an opening is inserted in the opening of the breather chamber. A plug, which closes a gap between an inner peripheral surface of the breather chamber and an outer peripheral surface of the inner end of the vent pipe so as to allow air to flow between the inside of the transmission case and the breather chamber and so as to restrict entrance of hydraulic oil into the breather chamber, is placed in the opening of the breather chamber.

Abstract: In a power transmission device, a breather chamber having an opening on its one end side and extending coaxially with the countershaft is formed in a countershaft that transmits power from an output shaft of an automatic transmission to a differential mechanism. An inner end of a vent pipe placed so as to extend through a transmission case and that includes the inner end and an outer end each having an opening is inserted in the opening of the breather chamber. A plug, which closes a gap between an inner peripheral surface of the breather chamber and an outer peripheral surface of the inner end of the vent pipe so as to allow air to flow between the inside of the transmission case and the breather chamber and so as to restrict entrance of hydraulic oil into the breather chamber, is placed in the opening of the breather chamber.

Abstract: To provide a hybrid drive speed change device in which a rotation sensor can be disposed appropriately from the viewpoint of reducing the axial dimension of the device. A rotary electric machine MG is disposed coaxially with an input shaft M, and includes a stator St and a rotor Ro provided radially inwardly of the stator St. An oil pump 18 includes a pump case 90, 91 in which a pump chamber 18a is formed, and a pump rotor 18b rotatably housed in the pump chamber 18a. The pump rotor 18b is disposed coaxially with the input shaft M. A rotation sensor 19 is disposed radially outwardly of the pump chamber 18a and radially inwardly of the stator St of the rotary electric machine MG, and disposed to overlap the oil pump 18 as seen from the radial direction of the input shaft M.

Abstract: To provide a hybrid drive speed change device in which a rotation sensor can be disposed appropriately from the viewpoint of reducing the axial dimension of the device. A rotary electric machine MG is disposed coaxially with an input shaft M, and includes a stator St and a rotor Ro provided radially inwardly of the stator St. An oil pump 18 includes a pump case 90, 91 in which a pump chamber 18a is formed, and a pump rotor 18b rotatably housed in the pump chamber 18a. The pump rotor 18b is disposed coaxially with the input shaft M. A rotation sensor 19 is disposed radially outwardly of the pump chamber 18a and radially inwardly of the stator St of the rotary electric machine MG, and disposed to overlap the oil pump 18 as seen from the radial direction of the input shaft M.

Abstract: The present invention is aimed to provide a carrier assembly which can be made small in size while securing a sufficient fixing strength between a first carrier plate and a second carrier plate. The second carrier plate (8) has a plurality of connection elements (23) bent toward the first carrier plate (7) to weld and fix the outwardly projected end portions (23b) of the connection elements with the outwardly projected end portion of the first carrier plate (7) by electron beam welding. The connection elements each have a base portions (23a) formed with a notch (28). The notch (28) thus formed makes a gap S between the base portion of the connection element and the corner portion (29) of the pinion gear.

Abstract: A semiconductor device including: a semiconductor region having a first semiconductor face and a second semiconductor face connected to the first semiconductor face and having an inclination with respect to the first semiconductor face; a gate insulating film formed on the first and on the second semiconductor faces; a gate electrode formed on the gate insulating film including a part on a boundary between the first semiconductor face and the second semiconductor face; a source impurity region formed in the semiconductor region so as to overlap the gate electrode within the first semiconductor face with the gate insulating film interposed between the source impurity region and the gate electrode; and a drain impurity region formed in the semiconductor region directly under the second semiconductor face at least.

Abstract: A semiconductor device including: a semiconductor region having a first semiconductor face and a second semiconductor face connected to the first semiconductor face and having an inclination with respect to the first semiconductor face; a gate insulating film formed on the first and on the second semiconductor faces; a gate electrode formed on the gate insulating film including a part on a boundary between the first semiconductor face and the second semiconductor face; a source impurity region formed in the semiconductor region so as to overlap the gate electrode within the first semiconductor face with the gate insulating film interposed between the source impurity region and the gate electrode; and a drain impurity region formed in the semiconductor region directly under the second semiconductor face at least.

Abstract: A method for manufacturing a semiconductor device includes the steps of forming a nitrogen-containing oxide film on a substrate for use as a gate insulating film, annealing the gate insulating film in an atmosphere containing oxygen, annealing the gate insulating film in an oxygen-free, inert atmosphere, and forming an electrode film on the twice annealed gate insulating film. The method may further include the steps of forming a gate electrode by patterning of the electrode film, forming LDD, forming side wall insulating films and forming source/drain regions.