Abstract: Provided is a new phosphor which can be excited by visible light in a wide band to emit a broad fluorescence spectrum, and also to emit near-infrared light with high intensity. Proposed is a phosphor, which is an oxide comprising Ca, Cu, and Si, wherein the containing molar ratios of the elements are 0.15?Ca/Si<0.25 and 0.13?Cu/Si<0.25.

Abstract: A method of forming a resist pattern including forming a resist film on a support using a resist composition; subjecting the resist film to exposure; and forming a resist pattern by developing the resist film having undergone the exposure, in which the developing is performed using a developer which contains a basic compound represented by the following formula (1) and tetrabutylammonium hydroxide, and in which the concentration of tetrabutylammonium hydroxide is equal to or greater than 2.5% by mass and less than 2.8% by mass: in which R1 to R4 each independently represent a linear or branched alkyl group, and the total number of carbon atoms contained in each of the alkyl groups represented by R1 to R4 is 4 to 15.

Abstract: A multicore fiber includes a plurality of unit multicore fibers each including: a plurality of core portions; and a clad portion which is formed in an outer circumference of the core portions and has a refractive index lower than a maximum refractive index of the core portions. The plurality of the core portions have substantially same refractive index profile and different group delays at same wavelength in same propagation mode. The core portions of the multicore fiber are configured so that the core portions of the plurality of the unit multicore fibers are connected in cascade, a maximum value of differential group delays between the core portions of the multicore fiber is smaller than a reduced value of a maximum value of differential group delays between the core portions of each unit multicore fiber as a value in terms of a length of the multicore fiber.

Abstract: A method of forming a resist pattern including forming a first resist pattern on a substrate; applying a cross-linking composition so as to cover the first resist pattern; heating the covered first resist pattern and crosslinking an isocyanate group in the cross-linking composition with the first resist pattern; and developing the covered first resist pattern, wherein the cross-linking composition includes a blocked isocyanate compound having a protected isocyanate group.

Abstract: Provided is a phosphor, which is excited by a wide band of visible light, capable of emitting near-infrared light of high intensity. The phosphor comprises a crystal phase represented by a formula (1): MCuSi2O6 (where M comprises one or more of Ba, Sr and Ca), and a crystal phase represented by a formula (2): MCuSi4O10 (where M comprises one or more of Ba, Sr and Ca), wherein a ratio ? of a diffraction peak intensity of MCuSi4O10 with respect to a diffraction peak intensity of MCuSi2O6 in an X-ray diffraction (XRD) pattern obtained by powder XRD measurement using CuK? rays is 0<??0.50.

Abstract: A method of forming a resist pattern, including: step A in which a first resist pattern is formed on a substrate, step B in which a basic composition is applied to cover the first resist pattern, step C in which a base contained in the basic composition and the first resist pattern are neutralized to form a developing solution insoluble region on a surface of the first resist pattern, and step D in which the covered first resist pattern is developed, the basic composition containing a basic component, and the basic component containing a polymeric compound having a structural unit (x0) represented by general formula (x0-1) (R is H, C1˜5 alkyl group, C1˜5 halogenated alkyl group; Vx01 is divalent hydrocarbon group having ether bond or amide bond or divalent aromatic hydrocarbon group; Yx01 is single bond or divalent linking group; Rx1 is substituent having nitrogen atom).

Abstract: A method for forming a resist pattern including forming a first contact hole pattern including a hole portion and a hole-unformed portion, which includes alkali developing the exposed positive-type resist film; preparing a structure including the first contact hole pattern and a first layer which covers the first contact hole pattern, which includes forming a first layer by applying a solution including an acid or a thermal acid generator onto a support on which the first contact hole pattern is formed; forming organic solvent-soluble and organic solvent-insoluble regions on the hole-unformed portion, which includes heating the structure; and forming a second contact hole pattern on the hole-unformed portion, which includes developing the heated structure with an organic solvent.

Abstract: A multicore fiber includes a plurality of unit multicore fibers each including: a plurality of core portions; and a clad portion which is formed in an outer circumference of the core portions and has a refractive index lower than a maximum refractive index of the core portions. The plurality of the core portions have substantially same refractive index profile and different group delays at same wavelength in same propagation mode. The core portions of the multicore fiber are configured so that the core portions of the plurality of the unit multicore fibers are connected in cascade, a maximum value of differential group delays between the core portions of the multicore fiber is smaller than a reduced value of a maximum value of differential group delays between the core portions of each unit multicore fiber as a value in terms of a length of the multicore fiber.

Abstract: Proposed is a phosphor capable of effectively inhibiting the occurrence of adverse influence of a sulfur-based gas while improving water resistance of the phosphor and effectively inhibiting the corrosion of a metallic member. A phosphor is proposed, which includes particles or a layer provided on the surface of a sulfur-containing phosphor, which contains sulfur in a host material, and containing a crystalline metal borate containing an IIA-Group element, boron, and oxygen.

Abstract: A method of forming a resist pattern, including: a step A in which a positive resist composition is applied to a substrate to form a positive resist film, the positive resist film is exposed and the positive resist film is subjected to an alkali development to form a first resist pattern; a step B in which a solution containing an acid or a thermoacid generator is applied to the substrate whereon the first resist pattern is formed, so as to cover the first resist pattern, to form a structure having the first resist pattern and a first layer covering the first resist pattern; a step C in which the structure is heated and the solubility of the first resist pattern in an organic solvent is changed under action of the acid or under action of acid generated from the thermoacid generator; and a step D in which the structure after heating is developed with the organic solvent to remove a region of the first resist pattern other than the region of the first resist pattern where the solubility in the organic solvent i

Abstract: A method of forming a resist pattern including forming a resist film on a support using a resist composition; subjecting the resist film to exposure; and forming a resist pattern by developing the resist film having undergone the exposure, in which the developing is performed using a developer which contains a basic compound represented by the following formula (1) and tetrabutylammonium hydroxide, and in which the concentration of tetrabutylammonium hydroxide is equal to or greater than 2.5% by mass and less than 2.8% by mass: in which R1 to R4 each independently represent a linear or branched alkyl group, and the total number of carbon atoms contained in each of the alkyl groups represented by R1 to R4 is 4 to 15.

Abstract: A method of forming a resist pattern including forming a first resist pattern on a substrate; applying a cross-linking composition so as to cover the first resist pattern; heating the covered first resist pattern and crosslinking an isocyanate group in the cross-linking composition with the first resist pattern; and developing the covered first resist pattern, wherein the cross-linking composition includes a blocked isocyanate compound having a protected isocyanate group.

Abstract: A method of forming a resist pattern, including: step A in which a first resist pattern is formed on a substrate, step B in which a basic composition is applied to cover the first resist pattern, step C in which a base contained in the basic composition and the first resist pattern are neutralized to form a developing solution insoluble region on a surface of the first resist pattern, and step D in which the covered first resist pattern is developed, the basic composition containing a basic component, and the basic component containing a polymeric compound having a structural unit (x0) represented by general formula (x0-1) (R is H, C1˜5 alkyl group, C1˜5 halogenated alkyl group; Vx01 is divalent hydrocarbon group having ether bond or amide bond or divalent aromatic hydrocarbon group; Yx01 is single bond or divalent linking group; Rx1 is substituent having nitrogen atom).

Abstract: A resist pattern formation method with enhanced resolution and process margin in forming a resist pattern. The method includes using a resist composition containing a high-molecular weight compound having a constituent unit represented by the general formula (a0-1) and conducting patterning by negative type development with a developing solution containing an organic solvent to forma resist pattern in which R represents a hydrogen atom, an alkyl group having 1 to 5 carbon atoms, or a halogenated alkyl group having 1 to 5 carbon atoms; Va0 represents a divalent hydrocarbon group; na0 is an integer of 0 to 2; R1 represents a chain or cyclic aliphatic hydrocarbon group; R2 represents a group for forming a monocyclic group together with the carbon atom to which R1 is bonded; and R3 represents an optionally substituted cyclic group.

Abstract: Provided is a novel CaS-based phosphor with which chemical reactions can be inhibited even if said CaS-based phosphor is heated with a heterogeneous material. This phosphor includes: a crystalline parent material represented by the composition formula Ca1-xSrxS.yZnO (in the formula, 0?x<1, 0<y?0.5); and a luminescent center.

Abstract: A method of forming a resist pattern, including: a step A in which a positive resist composition is applied to a substrate to form a positive resist film, the positive resist film is exposed and the positive resist film is subjected to an alkali development to form a first resist pattern; a step B in which a solution containing an acid or a thermoacid generator is applied to the substrate whereon the first resist pattern is formed, so as to cover the first resist pattern, to form a structure having the first resist pattern and a first layer covering the first resist pattern; a step C in which the structure is heated and the solubility of the first resist pattern in an organic solvent is changed under action of the acid or under action of acid generated from the thermoacid generator; and a step D in which the structure after heating is developed with the organic solvent to remove a region of the first resist pattern other than the region of the first resist pattern where the solubility in the organic solvent i

Abstract: A positive resist composition including a base component, an acid-generator component and a fluorine-containing polymer component (F) in a specific amount, the fluorine-containing polymer component (F) including a fluorine-containing polymer (F1) consisting of a structural unit (F-1) represented by general formula (F-1) (RC represents a hydrogen atom or a methyl group, R1 and R2 represent a hydrogen atom, an alkyl group or a fluorinated alkyl group, R3 represents a fluorine atom or a fluorinated alkyl group, and R4 represents an alkyl group or a fluorinated alkyl group) or a fluorine-containing copolymer (F2) containing the structural unit (F-1) and at least one structural unit selected from the group consisting of a structural unit (F-2) derived from an acrylate ester containing an acid dissociable, dissolution inhibiting group and a structural unit (F-3) represented by general formula (F-3) (RC represents a hydrogen atom or a methyl group, Z represents a single bond or a divalent linking group, and r repres

Abstract: What is provided is a positive-type photoresist composition containing an acid generator (A) capable of generating an acid when irradiated with an active ray or radiation, a resin (B) whose solubility in alkali increases under the action of acid, and an organic solvent (S), the photoresist composition further containing an alkali-metal salt (C).

Abstract: A resist composition contains a high-molecular weight compound which has a partial structure represented by a general formula (a0-r-1) and has a constituent unit represented by a general formula (a0-1). In the formula (a0-r-1), Y1 represents a divalent linking group; each of R2 and R3 represents a group having 0 to 20 carbon atoms, which is not a fluorine atom, and either R2 or R3 may form a ring with Y1; m represents an integer of 1 or more; and Mm+ represents an m-valent organic cation. In the formula (a0-1), R represents a hydrogen atom, an alkyl group, or a halogenated alkyl group; Ya01 represents a single bond or a divalent linking group; X01 represents a sulfur atom or an oxygen atom; and Ra01 represents an optionally substituted cyclic group, chain alkyl group or chain alkenyl group.

Abstract: A resist pattern formation method with enhanced resolution and process margin in forming a resist pattern. The method includes using a resist composition containing a high-molecular weight compound having a constituent unit represented by the general formula (a0-1) and conducting patterning by negative type development with a developing solution containing an organic solvent to forma resist pattern in which R represents a hydrogen atom, an alkyl group having 1 to 5 carbon atoms, or a halogenated alkyl group having 1 to 5 carbon atoms; Va0 represents a divalent hydrocarbon group; na0 is an integer of 0 to 2; R1 represents a chain or cyclic aliphatic hydrocarbon group; R2 represents a group for forming a monocyclic group together with the carbon atom to which R1 is bonded; and R3 represents an optionally substituted cyclic group.