Abstract: A light-emitting device includes a circuit board including a wiring on a surface of a substrate, the wiring including a raised portion, and a light-emitting element mounted on the raised portion. When the light-emitting element is of a flip-chip type, an element electrode thereof is connected to the raised portion such that an edge of the element electrode on an outer periphery side of the light-emitting element is located outside of the raised portion in a top view and an exposed portion of the element electrode is covered with a white or transparent resin. When the light-emitting element is of a face-up type, an element substrate thereof is bonded to the raised portion such that the raised portion is located inside the element substrate in the top view and an exposed portion of a bottom surface of the element substrate is covered with a white resin.

Abstract: A light emitting device includes: a base member; an insulating layer stacked in a surface of the base member, the insulating layer having excellent adhesion to a sealing glass; and a light emitting element mounted on the insulating layer, wherein: the insulating layer is formed by directly supplying a material to the surface of the base member; and porosity of the insulating layer is 10% or less.

Abstract: A light-emitting device includes a circuit board including a wiring on a surface of a substrate, the wiring including a raised portion, and a light-emitting element mounted on the raised portion. When the light-emitting element is of a flip-chip type, an element electrode thereof is connected to the raised portion such that an edge of the element electrode on an outer periphery side of the light-emitting element is located outside of the raised portion in a top view and an exposed portion of the element electrode is covered with a white or transparent resin. When the light-emitting element is of a face-up type, an element substrate thereof is bonded to the raised portion such that the raised portion is located inside the element substrate in the top view and an exposed portion of a bottom surface of the element substrate is covered with a white resin.

Abstract: A light-emitting device includes a first light-emitting element, a phosphor, and a second light-emitting element having a peak wavelength between peak wavelengths of two peaks that define a deepest dip in a composite emission spectrum of the first light-emitting element and the phosphor.

Abstract: A light-emitting device includes a first light-emitting element, a phosphor, and a second light-emitting element having a peak wavelength between peak wavelengths of two peaks that define a deepest dip in a composite emission spectrum of the first light-emitting element and the phosphor.

Abstract: A light emitting device manufacturing method includes: bonding a second film having an adhesive layer formed thereon to a substrate having bonded on a surface of a first film and transferring the adhesive layer onto the surface of the substrate; peeling off and removing the second film from the substrate; adhering and fixing a lead member to the adhesive layer; peeling off and removing the first film from the substrate; mounting a light emitting element on the lead member; and sealing the light emitting element and the lead member with a sealing material using a potting method to form a package.

Abstract: A light-emitting device includes a first light-emitting element disposed on a substrate, a convex-shaped first sealing resin that includes an annular portion formed in a closed annular shape in a top view and seals the first light-emitting element, a second light-emitting element disposed on the substrate in a region surrounded by the annular portion of the first sealing resin, and a second sealing resin filled in the region surrounded by the annular portion so as to seal the second light-emitting element. One of the first and second sealing resin includes a phosphor particle or the first and second sealing resins include a phosphor particle to emit a different fluorescent color from each other.

Abstract: A method for manufacturing a semiconductor light emitting device comprises a sealing step of sealing a semiconductor chip fixed on a lead frame with a sealing member, a removal step of removing the sealing member until a surface of the semiconductor chip becomes exposed, an irregularity formation step of forming fine irregularities on a bond surface formed in the removal step, and a bonding step of bonding a wavelength conversion member to the bond surface.

Abstract: A light-emitting device includes a first light-emitting element disposed on a substrate, a convex-shaped first sealing resin that includes an annular portion formed in a closed annular shape in a top view and seals the first light-emitting element, a second light-emitting element disposed on the substrate in a region surrounded by the annular portion of the first sealing resin, and a second sealing resin filled in the region surrounded by the annular portion so as to seal the second light-emitting element. One of the first and second sealing resin includes a phosphor particle or the first and second sealing resins include a phosphor particle to emit a different fluorescent color from each other.

Abstract: A method for manufacturing a semiconductor light emitting device comprises a sealing step of sealing a semiconductor chip fixed on a lead frame with a sealing member, a removal step of removing the sealing member until a surface of the semiconductor chip becomes exposed, an irregularity formation step of forming fine irregularities on a bond surface formed in the removal step, and a bonding step of bonding a wavelength conversion member to the bond surface.

Abstract: A method of making a light emitting element, the light emitting element with a semiconductor layer represented by: AlXInYGa1?X?YN (0?X?1, 0?Y?1, 0?X+Y?1), has the step of wet-etching a surface of the semiconductor layer by using an etching solution to have a roughened surface on the semiconductor layer. The wet-etching is conducted without irradiating the surface of the semiconductor layer with a light with a wavelength region corresponding to energy higher than bandgap energy of the semiconductor layer.

Abstract: A group III nitride-based compound semiconductor light emitting device includes a polarity inversion layer including a surface with a convex portion, and a transparent electrode formed on the polarity inversion layer. The polarity inversion layer may have a magnesium concentration of not less than 1×1020 atoms/cm3, or not less than 2×1020 atoms/cm3 and not more than 5×1021 atoms/cm3. The polarity inversion layer may be formed of AlxGa1?xN (0?x<1) doped with magnesium.

Abstract: A method of making a light emitting element, the light emitting element with a semiconductor layer represented by: AlxInyGa1-x-yN (0?X?1, 0?Y?1, 0?X+Y?1), has the step of wet-etching a surface of the semiconductor layer by using an etching solution to have a roughened surface on the semiconductor layer. The wet-etching is conducted without irradiating the surface of the semiconductor layer with a light with a wavelength region corresponding to energy higher than bandgap energy of the semiconductor layer.