Abstract: A terminal component for a secondary battery disclosed herein has a platelike head portion with a bottom surface and an upper surface in an opposite side to the bottom surface and a shaft portion extending from the bottom surface. The terminal component includes a first metal, and a second metal joined to the first metal and having a higher ductility than that of the first metal. The bottom surface of the head portion is formed of the first metal. The upper surface of the head portion is formed of the second metal. A circumferentially continuous chamfered portion is provided in an outer end portion of the bottom surface of the head portion. A boundary between the first metal and the second metal is formed in the chamfered portion.

Abstract: Provided is an airtightly sealing cap, by which a use quantity of Au is reduced in a soldering material for sealing a miniaturized electronic component storing package. An airtightly sealing cap (10) is used for an electronic component storing package (100) which includes an electronic component storing member (20) for storing an electronic component (40). The airtightly sealing cap is provided with a base material (1); a base layer (2) which is formed on the surface of the base material and contains Ni; and a soldering material layer (6), which is formed on the base layer, has a thickness of 10 ?m or less and composed of Au and Sn. The content percentage of Au in the soldering material layer is 43 mass % or more but not more than 64 mass %.

Abstract: Provided is an airtightly sealing cap, by which a use quantity of Au is reduced in a soldering material for sealing a miniaturized electronic component storing package. An airtightly sealing cap (10) is used for an electronic component storing package (100) which includes an electronic component storing member (20) for storing an electronic component (40). The airtightly sealing cap is provided with a base material (1); a base layer (2) which is formed on the surface of the base material and contains Ni; and a soldering material layer (6), which is formed on the base layer, has a thickness of 10 ?m or less and composed of Au and Sn. The content percentage of Au in the soldering material layer is 43 mass % or more but not more than 64 mass %.