Abstract: A backing plate of Ti for supporting a Ti sputtering target is formed of at least two components welded together. The backing plate is welded by interposing a Cu or Zr foil or powder between faces to be welded, and then heating the assembly to a reaction temperature high enough to melt one of the Ti and Cu or Zr to produce a liquid phase. The heating temperature is retained for a time long enough to permit diffusion of the Cu or Zr into the Ti to produce a liquid phase diffusion weld. By permitting diffusion to occur, a separate metallic compound is not produced at the welding face. In effect welding is accomplished without producing a welding face, whereby no interface exists in the finished weld. The resulting weld has a strength substantially equal to the strength of the Ti material, and very good welding qualities.

Abstract: A welding process for welding a Cu material to a Ti material includes interposing a tertiary component between the Ti material and the Cu material. The tertiary component is of a type of metal that, with Cu, forms a compound which is liquified at a temperature below the eutectic temperature of Ti and Cu. The above materials are heated and welded at temperature of (700 through 887° C.). The temperature selected is below the eutectic temperature of the Ti and Cu. The finished material forms a sputtering backing plate for a sputtering. A target member, bonded to the Cu material side of the backing plate, completes the sputtering target. In one embodiment, the proportion of the tertiary metal is achieved by controlling a thickness of the tertiary metal deposited on the Cu material. In another embodiment, the proportion of the tertiary metal is achieved by controlling the thickness of a layer of powder of the tertiary material deposited between the Cu and Ti materials.

Abstract: A backing plate of Ti for supporting a Ti sputtering target is formed of at least two components welded together. The backing plate is welded by interposing a Cu or Zr foil or powder between faces to be welded, and then heating the assembly to a reaction temperature high enough to melt one of the Ti and Cu or Zr to produce a liquid phase. The heating temperature is retained for a time long enough to permit diffusion of the Cu or Zr into the Ti to produce a liquid phase diffusion weld. By permitting diffusion to occur, a separate metallic compound is not produced at the welding face. In effect welding is accomplished without producing a welding face, whereby no interface exists in the finished weld. The resulting weld has a strength substantially equal to the strength of the Ti material, and very good welding qualities.

Abstract: Si material, which has been considered to be very brittle, and hard to bend, is heated to at least its brittle-ductile transition temperature. A bending moment is applied to a heated portion of the Si material so that a slip deformation is generated. Whereby it is possible to perform bending, and to greatly improve a degree of freedom for machining the Si material. The Si material has a brittle-ductile transition temperature which transfers from a brittle to a ductile state at its brittle-ductile transition temperature. At the transition temperature or more, the Si material is in a state that a slip can to be generated between its crystals in response to a bending torque applied thereto. Thus, when a bending moment is applied to the heated portion of the Si material which is heated to the transition temperature or more, a slip is generated between lattices or between crystal grains in the heated portion, so that the Si material is deformed.

Abstract: Si material, which has been considered to be very brittle, and hard to bend, is heated to at least its brittle-ductile transition temperature. A bending moment is applied to a heated portion of the Si material so that a slip deformation is generated. Whereby it is possible to perform bending, and to greatly improve a degree of freedom for machining the Si material. The Si material has a brittle-ductile transition temperature which transfers from a brittle to a ductile state at its brittle-ductile transition temperature. At the transition temperature or more, the Si material is in a state that a slip can to be generated between its crystals in response to a bending torque applied thereto. Thus, when a bending moment is applied to the heated portion of the Si material which is heated to the transition temperature or more, a slip is generated between lattices or between crystal grains in the heated portion, so that the Si material is deformed.

Abstract: A backing plate of Ti for supporting a Ti sputtering target is formed of at least two components welded together. The backing plate is welded by interposing a Cu or Zr foil or powder between faces to be welded, and then heating the assembly to a reaction temperature high enough to melt one of the Ti and Cu or Zr to produce a liquid phase. The heating temperature is retained for a time long enough to permit diffusion of the Cu or Zr into the Ti to produce a liquid phase diffusion weld. By permitting diffusion to occur, a separate metallic compound is not produced at the welding face. In effect welding is accomplished without producing a welding face, whereby no interface exists in the finished weld. The resulting weld has a strength substantially equal to the strength of the Ti material, and very good welding qualities.

Abstract: A welding process for welding a Cu material to a Ti material includes interposing a tertiary component between the Ti material and the Cu material. The tertiary component is of a type of metal that, with Cu, forms a compound which is liquified at a temperature below the eutectic temperature of Ti and Cu. The above materials are heated and welded at temperature of (700 through 887° C.). The temperature selected is below the eutectic temperature of the Ti and Cu. The finished material forms a sputtering backing plate for a sputtering. A target member, bonded to the Cu material side of the backing plate, completes the sputtering target. In one embodiment, the proportion of the tertiary metal is achieved by controlling a thickness of the tertiary metal deposited on the Cu material. In another embodiment, the proportion of the tertiary metal is achieved by controlling the thickness of a layer of powder of the tertiary material deposited between the Cu and Ti materials.

Abstract: A normal operating condition restoration device which comprises: (a) taught point memory device for storing successive taught points that constitute a work line on which a tool travels in relation to a workpiece and storing taught points for retraction which are among the taught points constituting the work line and to which the tool can be retracted from the workpiece; (b) tool abnormality detecting device for detecting abnormal conditions which have occurred in the tool traveling on the work line relative to the workpiece; and (c) controlling device for performing control.