Abstract: A semiconductor device includes an I/O circuit configured to be supplied with a first voltage, a second voltage higher than the first voltage, and a third voltage higher than the second voltage, and to receive an input signal based on the first voltage. The I/O circuit includes an enabler circuit configured to be supplied with the second voltage, and to generate a first signal based on the second voltage, and a first level shifter circuit coupled to the enabler circuit, and configured to, based on the first signal, level-shift a signal based on the second voltage to a signal based on the third voltage.

Abstract: According to one embodiment, a semiconductor device includes an I/O circuit. configured to be supplied with a first voltage, a second voltage higher than the first voltage, and a third voltage higher than the second voltage, and to receive an input signal based on the first voltage. The I/O circuit includes an enabler circuit configured to be supplied with the second voltage, and to generate a first signal based on the second voltage, and a first level shifter circuit coupled to the enabler circuit, and configured to, based on the first signal, level-shift a signal based on the second voltage to a signal based on the third voltage.

Abstract: A Schmitt trigger circuit includes a first circuit; a second circuit; a first switch; a third circuit; and a second switch. The first circuit output the output signal of a second or first logical level. The second circuit is coupled to a first potential node at a first end, and sends a current between the first end and a second end based on the output signal. The first switch electrically couples or uncouples the second end and a first node based on a selection signal. The third circuit is coupled to a second potential node at a third end, and sends a current exclusively with the second circuit between the third end and a fourth end based on the output signal. The second switch electrically couples or uncouples the fourth end and the first node based on the selection signal.

Abstract: A Schmitt trigger circuit includes a first circuit; a second circuit; a first switch; a third circuit; and a second switch. The first circuit output the output signal of a second or first logical level. The second circuit is coupled to a first potential node at a first end, and sends a current between the first end and a second end based on the output signal. The first switch electrically couples or uncouples the second end and a first node based on a selection signal. The third circuit is coupled to a second potential node at a third end, and sends a current exclusively with the second circuit between the third end and a fourth end based on the output signal. The second switch electrically couples or uncouples the fourth end and the first node based on the selection signal.

Abstract: A Schmitt trigger circuit includes a first circuit; a second circuit; a first switch; a third circuit; and a second switch. The first circuit output the output signal of a second or first logical level. The second circuit is coupled to a first potential node at a first end, and sends a current between the first end and a second end based on the output signal. The first switch electrically couples or uncouples the second end and a first node based on a selection signal. The third circuit is coupled to a second potential node at a third end, and sends a current exclusively with the second circuit between the third end and a fourth end based on the output signal. The second switch electrically couples or uncouples the fourth end and the first node based on the selection signal.

Abstract: A Schmitt trigger circuit includes a first circuit; a second circuit; a first switch; a third circuit; and a second switch. The first circuit output the output signal of a second or first logical level. The second circuit is coupled to a first potential node at a first end, and sends a current between the first end and a second end based on the output signal. The first switch electrically couples or uncouples the second end and a first node based on a selection signal. The third circuit is coupled to a second potential node at a third end, and sends a current exclusively with the second circuit between the third end and a fourth end based on the output signal. The second switch electrically couples or uncouples the fourth end and the first node based on the selection signal.

Abstract: The electrostatic protection circuit includes a first resistor connected between the power supply terminal and the grounding terminal. The electrostatic protection circuit includes a first capacitor connected in series with the first resistor. The electrostatic protection circuit includes a first inverter to which a signal based on a signal at a point of connection between the first resistor and the first capacitor is input. The electrostatic protection circuit includes a protecting MOS transistor that has a source and a drain connected between the power supply terminal and the grounding terminal and is controlled by a signal based on a first signal output to a gate thereof. The electrostatic protection circuit includes a second capacitor connected to the signal based on the first signal at a first end thereof and to the power supply terminal and/or the grounding terminal at a second end thereof.

Abstract: According to one embodiment, a first electrostatic protection circuit is connected between a first power supply wire and a second power supply wire, a second electrostatic protection circuit is connected between the first power supply wire and a third power supply wire, a first transistor is connected between the second power supply wire and the third power supply wire, a gate control circuit controls a gate potential of the first transistor based on a detection result of a second voltage, a second transistor is connected between the third power supply wire and a gate of the first transistor, and an abnormal voltage detection circuit controls on and off of the second transistor based on a detection result of a third voltage.

Abstract: A silicon-germanium non-formation region not formed with a silicon germanium layer and a silicon-germanium formation region formed with a silicon germanium layer are provided in a silicon chip, an internal circuit and an input/output buffer are arranged in the silicon-germanium formation region, and a pad electrode and an electrostatic protection element are arranged in the silicon-germanium non-formation region.

Abstract: A semiconductor device includes first and second MOSFETs corresponding to at least first power source voltage and second power source voltage lower than the first power source voltage, and non-silicide regions formed in drain portions of the first and second MOSFETs and having no silicide formed therein. The first MOSFET includes first diffusion layers formed in source/drain portions, a second diffusion layer formed below a gate portion and formed shallower than the first diffusion layer and a third diffusion layer formed with the same depth as the second diffusion layer in the non-silicide region, and the second MOSFET includes fourth diffusion layers formed in source/drain portions, a fifth diffusion layer formed below a gate portion and formed shallower than the fourth diffusion layer and a sixth diffusion layer formed shallower than the fourth diffusion layer and deeper than the fifth diffusion layer in the non-silicide region.

Abstract: A silicon-germanium non-formation region not formed with a silicon germanium layer and a silicon-germanium formation region formed with a silicon germanium layer are provided in a silicon chip, an internal circuit and an input/output buffer are arranged in the silicon-germanium formation region, and a pad electrode and an electrostatic protection element are arranged in the silicon-germanium non-formation region.

Abstract: A semiconductor device includes first and second MOSFETs corresponding to at least first power source voltage and second power source voltage lower than the first power source voltage, and non-silicide regions formed in drain portions of the first and second MOSFETs and having no silicide formed therein. The first MOSFET includes first diffusion layers formed in source/drain portions, a second diffusion layer formed below a gate portion and formed shallower than the first diffusion layer and a third diffusion layer formed with the same depth as the second diffusion layer in the non-silicide region, and the second MOSFET includes fourth diffusion layers formed in source/drain portions, a fifth diffusion layer formed below a gate portion and formed shallower than the fourth diffusion layer and a sixth diffusion layer formed shallower than the fourth diffusion layer and deeper than the fifth diffusion layer in the non-silicide region.

Abstract: A semiconductor integrated circuit includes: an internal circuit formed on a semiconductor chip, power being supplied thereto via a first power supply wire and a second power supply wire; input and output pads that exchange an input signal or an output signal with the internal circuit; input and output cells including first electrostatic protection elements that protect the internal circuit from electrostatic discharge between the input and output pads and the first or second power supply wire; and second power supply protection elements provided adjacent to the input and output cells and including diode strings connected between the first power supply wire and the second power supply wire.

Abstract: A semiconductor device including a semiconductor substrate having on its surface a recess and at least one projection formed in the recess. The projection has a channel region and an element isolating insulating film is formed in the recess. A MIS type semiconductor element is formed on the semiconductor substrate and includes a gate electrode formed on the channel region of the projection via a gate insulating film. Source and drain regions are formed to pinch the channel region of the projection therebetween. A channel region of the MIS type semiconductor element is formed to reach the at least one projection located adjacent to the MIS type semiconductor element in its channel width direction via the recess. A top surface of the at least one projection is located higher than the top surface of the element isolating insulating film by 20 nm or more.

Abstract: A silicon-germanium non-formation region not formed with a silicon germanium layer and a silicon-germanium formation region formed with a silicon germanium layer are provided in a silicon chip, an internal circuit and an input/output buffer are arranged in the silicon-germanium formation region, and a pad electrode and an electrostatic protection element are arranged in the silicon-germanium non-formation region.

Abstract: A semiconductor device includes first and second MOSFETs corresponding to at least first power source voltage and second power source voltage lower than the first power source voltage, and non-silicide regions formed in drain portions of the first and second MOSFETs and having no silicide formed therein. The first MOSFET includes first diffusion layers formed in source/drain portions, a second diffusion layer formed below a gate portion and formed shallower than the first diffusion layer and a third diffusion layer formed with the same depth as the second diffusion layer in the non-silicide region, and the second MOSFET includes fourth diffusion layers formed in source/drain portions, a fifth diffusion layer formed below a gate portion and formed shallower than the fourth diffusion layer and a sixth diffusion layer formed shallower than the fourth diffusion layer and deeper than the fifth diffusion layer in the non-silicide region.

Abstract: An electrostatic protection circuit includes a thyristor that discharges an excess charge generated between a first power supply terminal and a second power supply terminal having a lower voltage than the first power supply terminal, a trigger device that supplies a current turning on the thyristor, and an electrostatic discharge element placed between the first power supply terminal and the second power supply terminal in parallel with thyristor and having a higher current supply capability than the trigger device at the same inter-power-terminal voltage, the electrostatic element changing to an on state in a time shorter than a turn-on time of the thyristor connected to the trigger device and at a voltage lower than a turn-on voltage of the thyristor.

Abstract: In using an epitaxial growth method to selectively grow on a silicon substrate an epitaxial layer on which an element is to be formed, the epitaxial layer is formed so as to extend upward above a thermal oxide film that is an element isolating insulating film, in order to prevent formation of facets. Subsequently, unwanted portions of the epitaxial layer are removed by means of CMP to complete an STI element isolating structure.

Abstract: An electrostatic protection circuit including: a first power supply terminal 110; a second power supply terminal 112; an input-output terminal 111 for an external connection; a P-type MOSFET for a buffer 108 for pulling up input and output to a high-level potential; an N-type MOSFET for the buffer 107 for pulling down the input and output to a low-level potential; a rectifying element 109 connected between the first and second power supply terminals; a detector 101 for comparing the potential of the input-output terminal 111 to the potential of the first power supply terminal 110 to detect whether or not an electrostatic surge is flowing in; and controllers 105 and 106, wherein the controllers 105 and 106 control a gate potential of the N-type MOSFET 107 for the buffer when the detector 101 detects inflow of the electrostatic surge and turn off the N-type MOSFET 107 for the buffer.

Abstract: A semiconductor device is disclosed, which includes first, second and third power supply pads arranged in a peripheral area of a semiconductor chip, the second pad applied with a higher potential than the first pad, and the third pad applied with a higher potential than the second pad, first, second and third power supply wirings arranged in the peripheral area, the first wiring connected to the first pad, the second wiring connected to the second pad, and the third wiring connected to the third pad, a plurality of first electrostatic protection circuits arranged in the peripheral area and connected between the first and second wirings in correspondence to the first, second and third pads, and a plurality of second electrostatic protection circuits arranged in the peripheral area and connected between the second and third wirings in correspondence to the first, second and third pads.