Abstract: A frequency converter includes a transistor pair having a first transistor and a second transistor respectively having collector terminals commonly connected to each other and emitter terminals commonly connected to each other, the commonly-connected collector terminals of the transistor pair being connected to a power supply terminal by way of a first resistor, a third transistor having a collector terminal connected to the power supply terminal by way of a second resistor and an emitter terminal connected to the commonly-connected emitter terminals of the transistor pair, a third resistor having an end connected to the commonly-connected emitter terminals of the transistor pair, and another end grounded by way of a constant current source, and an output terminal connected to the commonly-connected collector terminals of the transistor pair.

Abstract: A mixer circuit mixes a target signal with a local oscillation signal to perform frequency conversion of the target signal. Since the mixer circuit uses a pseudo-sine wave as the local oscillation signal, it can carry out stable operation regardless of variations in the amplitude of the local oscillation signal.

Abstract: A frequency converter includes a transistor pair having a first transistor and a second transistor respectively having collector terminals commonly connected to each other and emitter terminals commonly connected to each other, the commonly-connected collector terminals of the transistor pair being connected to a power supply terminal by way of a first resistor, a third transistor having a collector terminal connected to the power supply terminal by way of a second resistor and an emitter terminal connected to the commonly-connected emitter terminals of the transistor pair, a third resistor having an end connected to the commonly-connected emitter terminals of the transistor pair, and another end grounded by way of a constant current source, and an output terminal connected to the commonly-connected collector terminals of the transistor pair.

Abstract: A high frequency amplifier in which a common emitter bipolar transistor is used, and in that a constant current source and a constant voltage source are switched to apply a DC bias to a base terminal of the bipolar transistor in accordance with a power level of a high frequency signal input to the bipolar transistor or a power level of a high frequency signal output therefrom, and a frequency mixer in that a DC bias is applied to a base of at least one of a bipolar transistor for the input of a high frequency signal and a bipolar transistor for the input of a local oscillation wave by using a configuration for applying the DC bias to a base of an amplifying bipolar transistor employed in the high frequency amplifier.

Abstract: A high frequency amplifier in which a common emitter bipolar transistor is used, and in that a constant current source and a constant voltage source are switched to apply a DC bias to a base terminal of the bipolar transistor in accordance with a power level of a high frequency signal input to the bipolar transistor or a power level of a high frequency signal output therefrom, and a frequency mixer in that a DC bias is applied to a base of at least one of a bipolar transistor for the input of a high frequency signal and a bipolar transistor for the input of a local oscillation wave by using a configuration for applying the DC bias to a base of an amplifying bipolar transistor employed in the high frequency amplifier.

Abstract: A plasma processing apparatus mainly comprises a processing chamber (10) formed by a vacuum vessel, a magnetic field forming coil (80) arranged around the processing chamber for forming a rotating magnetic field and gas supply means (101) supplying various gases to the processing chamber (10). The processing chamber (10) is divided into a reaction chamber (44) forming plasma with a partition wall (43) and a buffer chamber (45) discharging externally supplied gases with pressure difference. The reaction chamber (44) includes a high-frequency electrode arranged oppositely to the buffer chamber (45). The gas supply means (101) includes pulse gas valves (63a and 63b) for pulsatively supplying gases to the processing chamber (10). Thus provided are a plasma processing method and a plasma processing apparatus capable of uniformly processing a wafer having a large diameter and reducing RIE lag with respect to a fine etching pattern.

Abstract: Two electrodes are provided in a processing container so as to be opposed to each other. Main etching processing gases of Cl2 and BCl3 are introduced into the processing container, and a deposition-type gas composed by least two of C, H, and F, such as a CHF3 gas or a CF4 gas, is added thereto. A plasma is generated by applying a pulse-modulated high-frequency voltage between the two electrodes that hold a sample to be etched. The sample is etched by using the plasma.