Abstract: A sound absorber includes at least one cavity and at least one mouth to communicate the at least one cavity with an outside of the sound absorber. The at least one cavity includes a top surface, a bottom surface, and a side wall. The top surface includes the mouth. The bottom surface opposes the top surface. The side wall is extended to connect the top surface with the bottom surface. At least one of the top surface and the bottom surface is inclined with respect to the side wall.

Abstract: A photoelectric conversion element includes a composite passivation film disposed on a second surface of a semiconductor substrate that is opposite to a first surface on which light is incident. The composite passivation film includes a first passivation film having negative fixed charges and a protection film that protects the first passivation film. This allows the carrier collection efficiency of the photoelectric conversion element to be improved.

Abstract: A sound absorber includes at least one cavity and at least one mouth to communicate the at least one cavity with an outside of the sound absorber. The at least one cavity includes a top surface, a bottom surface, and a side wall. The top surface includes the mouth. The bottom surface opposes the top surface. The side wall is extended to connect the top surface with the bottom surface. At least one of the top surface and the bottom surface is inclined with respect to the side wall.

Abstract: A sound absorber includes at least one cavity and at least one mouth to communicate the at least one cavity with an outside of the sound absorber. The at least one cavity includes a top surface, a bottom surface, and a side wall. The top surface includes the mouth. The bottom surface opposes the top surface. The side wall is extended to connect the top surface with the bottom surface. At least one of the top surface and the bottom surface is inclined with respect to the side wall.

Abstract: An image forming apparatus includes multiple image bearers, multiple image bearer gears, a drive source, an output gear, a drive transmission body, multiple relay gears, and multiple drive gears. A center of rotation of each of the multiple drive gears to which a driving force is transmitted from the drive source is located downstream from a corresponding one of the multiple relay gears in a rotation direction of the corresponding one of the multiple relay gears, relative to a virtual line segment connecting a center of rotation of the corresponding one of the multiple relay gears connected to the multiple drive gears and the center of rotation of a corresponding one of the multiple image bearer gears.

Abstract: An image forming apparatus includes multiple image bearers, multiple image bearer gears, a drive source, an output gear, a drive transmission body, multiple relay gears, and multiple drive gears. A center of rotation of each of the multiple drive gears to which a driving force is transmitted from the drive source is located downstream from a corresponding one of the multiple relay gears in a rotation direction of the corresponding one of the multiple relay gears, relative to a virtual line segment connecting a center of rotation of the corresponding one of the multiple relay gears connected to the multiple drive gears and the center of rotation of a corresponding one of the multiple image bearer gears.

Abstract: A photoelectric conversion element includes a composite passivation film disposed on a second surface of a semiconductor substrate that is opposite to a first surface on which light is incident. The composite passivation film includes a first passivation film having negative fixed charges and a protection film that protects the first passivation film. This allows the carrier collection efficiency of the photoelectric conversion element to be improved.

Abstract: A sound absorber includes at least one cavity and at least one mouth to communicate the at least one cavity with an outside of the sound absorber. The at least one cavity includes a top surface, a bottom surface, and a side wall. The top surface includes the mouth. The bottom surface opposes the top surface. The side wall is extended to connect the top surface with the bottom surface. At least one of the top surface and the bottom surface is inclined with respect to the side wall.

Abstract: Provided is a photoelectric conversion device with an excellent conversion efficiency in which a series resistance between a semiconductor substrate and an electrode is reduced. The photoelectric conversion device includes a semiconductor substrate; a first conductivity region formed on the semiconductor substrate; and an electrode electrically connected to the first conductivity region, in which the first conductivity region includes an electrode region which faces the electrode, and crystal defects in the semiconductor substrate which faces the electrode region.

Abstract: A method for fabricating a back electrode type solar cell include the steps of applying a solution including a compound containing first conductivity type impurities, titanium alkoxide, and alcohol to a surface of a first conductivity type silicon substrate, and forming a light-receiving face diffusion layer and an anti-reflection film by subjecting the solution to heat treatment in a nitrogen atmosphere. There is also provided a back electrode type solar cell including a light-receiving face diffusion layer having a sheet resistance greater than or equal to 100 ?/ and less than 250 ?/.

Abstract: Disclosed is a solar cell including a passivation film formed on a light-receiving surface of a silicon substrate, and an antireflection film formed on the passivation film, wherein the passivation film has a refractive index higher than that of the antireflection film. The passivation film and the antireflection film can each be made of a silicon nitride film.

Abstract: There is provided a back electrode type solar cell including: a silicon substrate of a first conductivity type; an electrode for the first conductivity type and an electrode for a second conductivity type provided at a back surface opposite to a light-receiving surface of the silicon substrate; and a first conductivity type impurity diffusion layer and a second conductivity type impurity diffusion layer provided at the back surface of the silicon substrate, the first conductivity type impurity diffusion layer and the second conductivity type impurity diffusion layer being adjacently provided, the first conductivity type impurity diffusion layer being provided at a peripheral edge of the back surface of the silicon substrate, and a method for producing the back electrode type solar cell.

Abstract: A back surface contact type solar cell having a first conductivity type region and second conductivity type region formed alternately at one surface of a semiconductor substrate, includes an electrode for first conductivity type arranged on the first conductivity type region, and an electrode for second conductivity type arranged on the second conductivity type region. The back surface contact type solar cell includes a first non-connection region between electrodes for second conductivity type adjacent in an aligning direction of the first conductivity type region and the second conductivity type region, impeding electrical connection with the electrode for first conductivity type, and a second non-connection region between electrodes for first conductivity type adjacent in the aligning direction, impeding electrical connection with the electrode for second conductivity type . A back surface contact type solar cell with a wiring board, a solar cell string, and a solar cell module are also provided.

Abstract: A solar cell (10) including a passivation film having a high effect for both a p region and an n region on a surface of a silicon substrate of the solar cell is provided. In the solar cell, a first passivation film made of a silicon nitride film is formed on a surface opposite to a light-receiving surface of the silicon substrate, and the first passivation film has a refractive index of not less than 2.6. Preferably, in the solar cell, a second passivation film including a silicon oxide film and/or an aluminum oxide film is formed between the silicon substrate and the first passivation film. Preferably, the solar cell is a back surface junction solar cell having a pn junction formed on the surface opposite to the light-receiving surface of the silicon substrate.

Abstract: Disclosed is a solar cell including a passivation film (2) formed on a light-receiving surface of a silicon substrate (1), and an antireflection film (3) formed on the passivation film (2), wherein the passivation film (2) has a refractive index higher than that of the antireflection film (3). The passivation film (2) and the antireflection film (3) can each be made of a silicon nitride film.