Abstract: A first high frequency processing unit detects a first broadcasting wave transmitted using a first frequency band, and extracts a first high frequency signal. Further, a second high frequency processing unit detects a second broadcasting wave transmitted using a second frequency band different from the first frequency band, and extracts a second high frequency signal. Furthermore, at least one local oscillator generates a local oscillation signal used in the first high frequency processing unit and the second high frequency processing unit.

Abstract: There are provided a high frequency module and a receiver capable of exhausting an electric field and a magnetic field to the outside of a shield, more closely arranging electronic components inside the shield, and being downsized. The high frequency module has integrated circuits (IC) 112, 113 each incorporating an oscillator including an inductor, and a shield case 114 as a shield for covering the ICs 112, 113, and the shield case 114 as a shield is formed with openings 116A, 116B having a size equal to or more than half the shape size of the ICs 112, 113 in areas opposed to the arrangement positions of the ICs 112, 113.

Abstract: A reception device includes a first input terminal receiving a first television broadcast signal of a first frequency band or a mixed wave of the first television broadcast signal and a second television broadcast signal of a second frequency band; a second input terminal receiving the second television broadcast signal; first and second tuner; a matching unit extracting a second broadcast signal from a broadcast signal received from a first circuit terminal and outputting the extracted second broadcast signal from a second circuit terminal; a first connection portion selectively performing a connection between the first input terminal and the first circuit terminal of the matching unit; and a second connection portion setting an input path of the second television broadcast signal to the second tuner to a path from the second input terminal or a path from the second circuit terminal of the matching unit.

Abstract: A first high frequency processing unit detects a first broadcasting wave transmitted using a first frequency band, and extracts a first high frequency signal. Further, a second high frequency processing unit detects a second broadcasting wave transmitted using a second frequency band different from the first frequency band, and extracts a second high frequency signal. Furthermore, at least one local oscillator generates a local oscillation signal used in the first high frequency processing unit and the second high frequency processing unit.

Abstract: There are provided a high frequency module and a receiver capable of exhausting an electric field and a magnetic field to the outside of a shield, more closely arranging electronic components inside the shield, and being downsized. The high frequency module has integrated circuits (IC) 112, 113 each incorporating an oscillator including an inductor, and a shield case 114 as a shield for covering the ICs 112, 113, and the shield case 114 as a shield is formed with openings 116A, 116B having a size equal to or more than half the shape size of the ICs 112, 113 in areas opposed to the arrangement positions of the ICs 112, 113.

Abstract: A reception device includes a first input terminal receiving a first television broadcast signal of a first frequency band or a mixed wave of the first television broadcast signal and a second television broadcast signal of a second frequency band; a second input terminal receiving the second television broadcast signal; first and second tuner; a matching unit extracting a second broadcast signal from a broadcast signal received from a first circuit terminal and outputting the extracted second broadcast signal from a second circuit terminal; a first connection portion selectively performing a connection between the first input terminal and the first circuit terminal of the matching unit; and a second connection portion setting an input path of the second television broadcast signal to the second tuner to a path from the second input terminal or a path from the second circuit terminal of the matching unit.

Abstract: A solid-state image sensor capable of improving detection sensitivity for an output signal is provided. This solid-state image sensor comprises a first gate electrode formed on a semiconductor substrate, a first impurity region formed on the semiconductor substrate at a first distance from the first gate electrode for receiving the signal charges and a second gate electrode formed at a second distance from the first impurity region for discharging unnecessary signal charges after extraction of a voltage signal from the first impurity region. The first distance between the first impurity region and the first gate electrode is larger than the second distance between the first impurity region and the second gate electrode.

Abstract: Receiving method and apparatus of analog television signals where analog television signals receiving is performed by digital processing are proposed. A high frequency signal supplied to an input terminal 1 is supplied to a mixer circuit 2 and mixed with a local oscillation signal from a local oscillator circuit 3. The intermediate frequency signal from the mixer circuit 2 is supplied to an A/D converter circuit 4. Thereafter the digital converted signal is supplied to a video carrier wave reproducer circuit 5 and a video demodulator circuit 6 by digital processing, and a demodulated video signal is derived at an output terminal 7. At the same time the digital signal from the A/D converter circuit 4 is supplied to a phase comparator circuit 11 and phase compared with an oscillation signal from a variable frequency oscillator (VCO) 12 and further the phase compared output is supplied to the VCO 12.

Abstract: A compact semiconductor device having a contact hole that improves stability of electric connection between a wire and an electrode. The semiconductor device includes an insulation layer formed on a semiconductor substrate, first electrodes formed on the insulation layer and spaced from one another by an interval, an insulation film covering the first electrodes, and spaced second electrodes formed on the insulation film. Each second electrode includes an intermediate portion filling the space between two adjacent first electrodes, two edge portions respectively laid above the two adjacent first electrodes in an overlapping manner, and an upper surface connected to a wire by a contact. Thickness, t1, of the insulation film, thickness, t2, of each edge portion of the second electrode, and interval, S, between the first electrodes are adjusted to satisfy the expression of S<(2t1+2t2).

Abstract: A semiconductor device allowing simplification of a fabrication process is provided. This semiconductor device comprises a first insulator film, consisting of a single material, formed to be in contact with the upper surface of a semiconductor chip including a circuit, a first wire formed to be in contact with the upper surface of the first insulator film and a second wire formed to extend along the side surface and the lower surface of the semiconductor chip and connected to the lower surface of the first wire exposed by partially removing the first insulator film.

Abstract: A solid-state image sensor capable of suppressing deterioration of a transfer efficiency of electrons is provided. The solid-state image sensor comprises a first conductive type first impurity region that can store electrons and holes; a second conductive type second impurity region that is formed so as to have a region where the first and second impurity regions overlap one another; and a transfer electrode that is formed to overlie and extend at least from the first impurity region to the region where the first and second impurity regions overlap one another.

Abstract: A solid-state image sensor capable of improving detection sensitivity for an output signal is provided. This solid-state image sensor comprises a first gate electrode formed on a semiconductor substrate, a first impurity region formed on the semiconductor substrate at a first distance from the first gate electrode for receiving the signal charges and a second gate electrode formed at a second distance from the first impurity region for discharging unnecessary signal charges after extraction of a voltage signal from the first impurity region. The first distance between the first impurity region and the first gate electrode is larger than the second distance between the first impurity region and the second gate electrode.

Abstract: A conventional image sensing device allowed significant amounts of unwanted electrons to flow upon pixel mixture, thereby providing a low transfer efficiency. An image sensing device has an image sensing section in which multiple light-receiving pixels for converting incident light into information charge for storage during an image sensing period are disposed in rows and columns in a light-receiving region on a semiconductor substrate. A storage section temporarily stores information charge that has been vertically transferred from the image sensing section. A horizontal transfer section vertically transfers row by row the information charges accumulated in the storage section. A driving section provides vertical transfer control.

Abstract: A compact semiconductor device having a contact hole that improves stability of electric connection between a wire and an electrode. The semiconductor device includes an insulation layer formed on a semiconductor substrate, first electrodes formed on the insulation layer and spaced from one another by an interval, an insulation film covering the first electrodes, and spaced second electrodes formed on the insulation film. Each second electrode includes an intermediate portion filling the space between two adjacent first electrodes, two edge portions respectively laid above the two adjacent first electrodes in an overlapping manner, and an upper surface connected to a wire by a contact. Thickness, t1, of the insulation film, thickness, t2, of each edge portion of the second electrode, and interval, S, between the first electrodes are adjusted to satisfy the expression of S<(2t1+2t2).

Abstract: A semiconductor device allowing simplification of a fabrication process is provided. This semiconductor device comprises a first insulator film, consisting of a single material, formed to be in contact with the upper surface of a semiconductor chip including a circuit, a first wire formed to be in contact with the upper surface of the first insulator film and a second wire formed to extend along the side surface and the lower surface of the semiconductor chip and connected to the lower surface of the first wire exposed by partially removing the first insulator film.

Abstract: Receiving method and apparatus of analog television signals where analog television signals receiving is performed by digital processing are proposed.

Abstract: A band-pass filter separates an audio intermediate frequency signal from an input intermediate frequency signal, and an A/D converter circuit converts the audio intermediate frequency signal into a digital signal. A DSP performs audio detection on the digital signal and forms an AGC signal based on the signal. A variable gain amplifier performs AGC on the audio intermediate frequency signal in response to the AGC signal. A bandpass filter separates and takes out a video intermediate frequency signal from the signal, and an A/D converter circuit converts the video intermediate frequency signal into a digital signal. A DSP performs video detection on the signal. An AGC signal is formed based on the signals and AGC is performed on the video intermediate frequency signals by using the AGC signal.

Abstract: A plurality of source/drain regions are formed on a surface of a silicon substrate at a prescribed space. Floating gate electrodes are formed on sides of a channel region closer to the source/drain regions respectively through a first insulator film. Projections are formed on peripheral edge portions of the floating gate electrodes respectively. A control gate electrode is formed over the channel region and the floating gate electrodes through a second insulator film. The control gate electrode is opposed to the floating gate electrodes at one surface through the second insulator film.

Abstract: A band-pass filter separates an audio intermediate frequency signal from an input intermediate frequency signal, and an A/D converter circuit converts the signal into a digital signal. A DSP performs audio detection on the signal and forms an AGC signal based on the signal. A variable gain amplifier performs AGC on the signal. A band-pass filter separates and takes out a video intermediate frequency signal from the signal, and an A/D converter circuit converts the signal into a digital signal. A DSP performs video detection on the signal. An AGC signal is formed based on the signals and AGC is performed on the signal by using the signal.

Abstract: A split gate transistor having a semiconductor substrate, a source region and a drain region formed on the semiconductor substrate. A channel region is formed between the source region and the drain region. A floating gate electrode is formed substantially above the channel region. The floating gate electrode has an end surface. A control gate electrode is provided over the semiconductor substrate so as to overlap the floating gate electrode. The control gate electrode has an end surface formed level with the end surface of the floating gate electrode.