Patents by Inventor Takayuki Kamaishi
Takayuki Kamaishi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20220148980Abstract: A film forming apparatus includes: a processing container; a stage arranged inside the processing container and configured to place a substrate thereon, the stage including a plurality of film forming portions configured to form a film on a back surface of the substrate opposite to a surface of the substrate on which an element is formed, with a material gas supplied to the back surface via a supply port having a shape forming at least a portion of a film forming pattern for reducing stress applied to the substrate; and a control device configured to independently control film formations on the back surface by the plurality of film forming portions.Type: ApplicationFiled: March 25, 2020Publication date: May 12, 2022Inventors: Atsushi KUBO, Takayuki YAMAGISHI, Takayuki KAMAISHI, Tetsuya SAITO
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Patent number: 10950417Abstract: A substrate processing apparatus includes a process container; a process gas supply mechanism; a substrate loading table; a temperature adjusting medium passage; a temperature adjusting medium extraction mechanism; a heater; and a temperature controller. The temperature controller is configured to adjust a temperature of a target substrate to a first temperature by allowing a temperature adjusting medium to flow through the temperature adjusting medium passage of the substrate loading table; and adjust the temperature of the target substrate to a second temperature higher than the first temperature by extracting the temperature adjusting medium of the temperature adjusting medium passage using the temperature adjusting medium extraction mechanism while heating the target substrate using the heater.Type: GrantFiled: June 11, 2018Date of Patent: March 16, 2021Assignee: TOKYO ELECTRON LIMITEDInventors: Einosuke Tsuda, Seishi Murakami, Takayuki Kamaishi
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Publication number: 20180366303Abstract: A substrate processing apparatus includes a process container; a process gas supply mechanism; a substrate loading table; a temperature adjusting medium passage; a temperature adjusting medium extraction mechanism; a heater; and a temperature controller. The temperature controller is configured to adjust a temperature of a target substrate to a first temperature by allowing a temperature adjusting medium to flow through the temperature adjusting medium passage of the substrate loading table; and adjust the temperature of the target substrate to a second temperature higher than the first temperature by extracting the temperature adjusting medium of the temperature adjusting medium passage using the temperature adjusting medium extraction mechanism while heating the target substrate using the heater.Type: ApplicationFiled: June 11, 2018Publication date: December 20, 2018Inventors: Einosuke TSUDA, Seishi MURAKAMI, Takayuki KAMAISHI
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Patent number: 9984892Abstract: Disclosed is a method for removing, from a target substrate having an insulating film with a predetermined pattern formed thereon, a silicon-containing oxide film formed in a silicon portion at a bottom of the pattern. The method includes: forming a carbon-based protective film on the entire surface of the insulating film including the pattern by ALD using a carbon source gas; selectively removing the carbon-based protective film on an upper surface of the insulating film and on the bottom of the pattern by an anisotropic plasma processing; removing the silicon-containing oxide film formed on the bottom of the pattern by etching; and removing a remaining portion of the carbon-based protective film.Type: GrantFiled: May 16, 2017Date of Patent: May 29, 2018Assignee: Tokyo Electron LimitedInventors: Takashi Kobayashi, Seishi Murakami, Takashi Sakuma, Masahiko Tomita, Takamichi Kikuchi, Akitaka Shimizu, Takayuki Kamaishi, Einosuke Tsuda
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Publication number: 20170338120Abstract: Disclosed is a method for removing, from a target substrate having an insulating film with a predetermined pattern formed thereon, a silicon-containing oxide film formed in a silicon portion at a bottom of the pattern. The method includes: forming a carbon-based protective film on the entire surface of the insulating film including the pattern by ALD using a carbon source gas; selectively removing the carbon-based protective film on an upper surface of the insulating film and on the bottom of the pattern by an anisotropic plasma processing; removing the silicon-containing oxide film formed on the bottom of the pattern by etching; and removing a remaining portion of the carbon-based protective film.Type: ApplicationFiled: May 16, 2017Publication date: November 23, 2017Inventors: Takashi Kobayashi, Seishi Murakami, Takashi Sakuma, Masahiko Tomita, Takamichi Kikuchi, Akitaka Shimizu, Takayuki Kamaishi, Einosuke Tsuda
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Publication number: 20120145697Abstract: A heat treatment apparatus is configured to include: a treatment chamber for accommodating therein a wafer; a substrate supporting unit for horizontally supporting the wafer in the treatment chamber; and a lamp unit provided above the treatment chamber. The lamp unit includes: a base member; a plurality of lamps provided on the lower surface of the base member whose front ends face downwardly; a plurality of ring-shaped reflectors concentrically provided on the lower surface of the base member to protrude downward; and a cooling head for supplying a cooling medium into the reflectors. At least some of the lamps are arranged along the reflectors, and cooling medium channels, each inner space of which is formed as a ring-shaped space, are respectively provided within the reflectors in the extending directions of the reflectors.Type: ApplicationFiled: August 11, 2010Publication date: June 14, 2012Applicant: TOKYO ELECTRON LIMMITEDInventors: Tomohito Komatsu, Takayuki Kamaishi, Ryoji Yamazaki
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Patent number: 8191505Abstract: A processing gas introducing mechanism for introducing a processing gas into a processing space is provided between a plasma generation unit and a chamber of a plasma processing apparatus. The processing gas introducing mechanism includes a gas introducing base having therein a gas introducing path for introducing the processing gas into the processing space, and a near ring-shaped gas introducing plate equipped in the hole part of the gas introducing base such that it can be detached therefrom. Herein, the gas introducing base has a hole part forming one portion of the processing space in a central portion thereof, and the gas introducing plate has plural gas discharge holes communicating with the processing space to discharge thereinto the processing gas from the gas introducing path.Type: GrantFiled: June 23, 2009Date of Patent: June 5, 2012Assignee: Tokyo Electron LimitedInventors: Takayuki Kamaishi, Akinori Shimamura, Masato Morishima
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Patent number: 7769279Abstract: A processing gas is prevented from entering into a space below a placement table. A supporting surface 62 for supporting the lower face of a placement table 58 is provided at an inner circumferential portion of the upper end of a support 56. A circumferentially extending purge gas groove 64 is formed outside the supporting surface 62, in an intermediate circumferential portion of the upper end of the support 56. A narrow flow path 68 is provided outside the purge gas groove 64, at a position corresponding to an outer circumferential portion of the upper end of the support 56. A purge gas fed from purge gas-feeding means 66 into the purge gas groove diffuses in the circumferential direction in the purge gas groove 64 and flows out to the outside from the narrow flow path 68. Such a flow of the purge gas prevents a processing gas from entering into the purge gas groove 64 and a space S1 below the placement table.Type: GrantFiled: July 3, 2007Date of Patent: August 3, 2010Assignee: Tokyo Electron LimitedInventors: Sumi Tanaka, Takayuki Kamaishi, Kouki Suzuki
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Publication number: 20100037959Abstract: A method of supplying a process gas comprises a step in which there is generated a process gas that is polymerizable depending on a temperature, and a step in which the thus generated process gas is supplied to a processing apparatus 4 configured to perform a predetermined process to an object to be processed W under a reduced-pressure atmosphere. When the process gas is supplied to the processing apparatus 4, a flow rate of the process gas is controlled by using a mass flow-rate control unit of a lower differential pressure type having a diaphragm 80, in which an appropriate operation range of a supply pressure is set lower than the atmospheric pressure. Thus, a supply rate (actual flow rate) of a process gas such as an HF gas that is polymerizable depending on a temperature can be precisely controlled in a stable manner.Type: ApplicationFiled: November 13, 2007Publication date: February 18, 2010Inventors: Takayuki Kamaishi, Eiichi Komori, Susumu Yamauchi, Akifumi Hayashi
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Publication number: 20090260762Abstract: A processing gas introducing mechanism for introducing a processing gas into a processing space is provided between a plasma generation unit and a chamber of a plasma processing apparatus. The processing gas introducing mechanism includes a gas introducing base having therein a gas introducing path for introducing the processing gas into the processing space, and a near ring-shaped gas introducing plate equipped in the hole part of the gas introducing base such that it can be detached therefrom. Herein, the gas introducing base has a hole part forming one portion of the processing space in a central portion thereof, and the gas introducing plate has plural gas discharge holes communicating with the processing space to discharge thereinto the processing gas from the gas introducing path.Type: ApplicationFiled: June 23, 2009Publication date: October 22, 2009Applicant: TOKYO ELECTRON LIMITEDInventors: Takayuki Kamaishi, Akinori Shimamura, Masato Morishima
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Publication number: 20080011734Abstract: A processing gas is prevented from entering into a space below a placement table. A supporting surface 62 for supporting the lower face of a placement table 58 is provided at an inner circumferential portion of the upper end of a support 56. A circumferentially extending purge gas groove 64 is formed outside the supporting surface 62, in an intermediate circumferential portion of the upper end of the support 56. A narrow flow path 68 is provided outside the purge gas groove 64, at a position corresponding to an outer circumferential portion of the upper end of the support 56. A purge gas fed from purge gas-feeding means 66 into the purge gas groove diffuses in the circumferential direction in the purge gas groove 64 and flows out to the outside from the narrow flow path 68. Such a flow of the purge gas prevents a processing gas from entering into the purge gas groove 64 and a space S1 below the placement table.Type: ApplicationFiled: July 3, 2007Publication date: January 17, 2008Applicant: TOKYO ELECTRON LIMITEDInventors: Sumi TANAKA, Takayuki Kamaishi, Kouki Suzuki
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Patent number: 7250094Abstract: A processing gas is prevented from entering into a space below a placement table. A supporting surface for supporting the lower face of a placement table is provided at an inner circumferential portion of the upper end of a support column. A circumferentially extending purge gas groove is formed outside the supporting surface, in an intermediate circumferential portion of the upper end of the support column. A narrow flow path is provided outside the purge gas groove, at a position corresponding to an outer circumferential portion of the upper end of the support column. A purge gas diffuses in the circumferential direction in the purge gas groove and flows out to the outside from the narrow flow path. Such a flow of the purge gas prevents a processing gas from entering into the purge gas groove and a space below the placement table.Type: GrantFiled: February 10, 2006Date of Patent: July 31, 2007Assignee: Tokyo Electron LimitedInventors: Sumi Tanaka, Takayuki Kamaishi, Kouki Suzuki
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Publication number: 20060124060Abstract: A processing gas is prevented from entering into a space below a placement table. A supporting surface 62 for supporting the lower face of a placement table 58 is provided at an inner circumferential portion of the upper end of a support 56. A circumferentially extending purge gas groove 64 is formed outside the supporting surface 62, in an intermediate circumferential portion of the upper end of the support 56. A narrow flow path 68 is provided outside the purge gas groove 64, at a position corresponding to an outer circumferential portion of the upper end of the support 56. A purge gas fed from purge gas-feeding means 66 into the purge gas groove diffuses in the circumferential direction in the purge gas groove 64 and flows out to the outside from the narrow flow path 68. Such a flow of the purge gas prevents a processing gas from entering into the purge gas groove 64 and a space S1 below the placement table.Type: ApplicationFiled: February 10, 2006Publication date: June 15, 2006Applicant: TOKYO ELECTRON LIMITEDInventors: Sumi Tanaka, Takayuki Kamaishi, Kouki Suzuki
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Publication number: 20060060141Abstract: A processing gas introducing mechanism for introducing a processing gas into a processing space is provided between a plasma generation unit and a chamber of a plasma processing apparatus. The processing gas introducing mechanism includes a gas introducing base having therein a gas introducing path for introducing the processing gas into the processing space, and a near ring-shaped gas introducing plate equipped in the hole part of the gas introducing base such that it can be detached therefrom. Herein, the gas introducing base has a hole part forming one portion of the processing space in a central portion thereof, and the gas introducing plate has plural gas discharge holes communicating with the processing space to discharge thereinto the processing gas from the gas introducing path.Type: ApplicationFiled: November 2, 2005Publication date: March 23, 2006Applicant: TOKYO ELECTRON LIMITEDInventors: Takayuki Kamaishi, Akinori Shimamura, Masato Morishima