Abstract: Disclosed is a stacked-type plate-shaped sensor element for detecting the concentration of a specific gas component in a gas under measurement. The sensor element includes: a first ceramic layer; a pair of measurement and reference electrodes stacked on a front end part of the first ceramic layer; a through hole formed through at least the first ceramic layer in a rear end side of the sensor element; a through hole conductor disposed on an inner wall of the through hole; a porous reference lead extending between the reference electrode and the through hole conductor; a gas-impermeable second ceramic layer arranged on the first ceramic layer to cover at least the reference lead; and a ventilation portion provided, in the form of a hollow space or a porous substance, between the first and second ceramic layers at a position facing the through hole and communicating with the reference lead.

Abstract: Disclosed is a stacked-type plate-shaped sensor element for detecting the concentration of a specific gas component in a gas under measurement. The sensor element includes: a first ceramic layer; a pair of measurement and reference electrodes stacked on a front end part of the first ceramic layer; a through hole formed through at least the first ceramic layer in a rear end side of the sensor element; a through hole conductor disposed on an inner wall of the through hole; a porous reference lead extending between the reference electrode and the through hole conductor; a gas-impermeable second ceramic layer arranged on the first ceramic layer to cover at least the reference lead; and a ventilation portion provided, in the form of a hollow space or a porous substance, between the first and second ceramic layers at a position facing the through hole and communicating with the reference lead.

Abstract: A stent is disclosed, which is capable of preventing connection sections from overlapping with each other in a radial direction when a force is applied inadvertently thereto by adjusting distribution of the connection sections with respect to a direction of helix of the strut. A link portion of the stent includes connection sections provided integrally with one helical portion and other helical portions adjacent to each other, and disposed in positions overlapped with each other at least partly along an axial direction of a cylindrical shape in a state of opposing to each other, and a biodegradable material connecting connection sections by being interposed between the connection sections.

Abstract: A stent has a stent body that is configured to include linear configuration elements, a first connection portion and a second connection portion which are integrally formed with the stent body in each of the linear configuration elements adjacent to each other side by side in an axial direction of the stent body having the cylindrical shape, and which are connected to each other while positions overlap in the axial direction and in a circumferential direction of the stent, and a connection member that includes a biodegradable material for connecting the first connection portion and the second connection portion to each other. The stent thus prevents linear configuration elements from being unexpectedly disconnected from each other, while achieving an expansion holding force and excellent flexibility of the stent.

Abstract: A stent includes a plurality of wavy annular bodies each formed in an annular shape from a wavy linear member, and a connection part provided between the adjacent wavy annular bodies, interconnecting the adjacent wavy annular bodies coaxially, weaker than the wavy annular bodies and rupturable. The connection part extends in a slanting manner relative to an axial direction in which the wavy annular bodies are aligned, and interconnects that one inflexed part of one wavy annular body which is curved in a shape projected toward the other wavy annular body adjacent to the one wavy annular body and that the other inflexed part of the other wavy annular body which is curved in a shape projected toward the one wavy annular body.

Abstract: A stent includes a plurality of wavy annular bodies each formed in an annular shape from a wavy linear member, and a connection part provided between the adjacent wavy annular bodies, interconnecting the adjacent wavy annular bodies coaxially, weaker than the wavy annular bodies and rupturable. The connection part extends in a slanting manner relative to an axial direction in which the wavy annular bodies are aligned, and interconnects that one inflexed part of one wavy annular body which is curved in a shape projected toward the other wavy annular body adjacent to the one wavy annular body and that the other inflexed part of the other wavy annular body which is curved in a shape projected toward the one wavy annular body.

Abstract: The present invention is a method of fabricating a semiconductor device by transferring a semiconductor chip supported on a flexible support film to a mount member by means of a robot arm. This method comprises a film bending step of bending a support film so that same has a pickup face that lies along the movement direction of the robot arm and a withdrawal face that lies substantially perpendicular to this movement direction and does not interfere with the robot arm; a step of disposing the mount member, whereon the semiconductor chip is to be mounted, in a position facing the withdrawal face and flanking on the pickup face; and a step of picking up the semiconductor chip from the pickup face by means of the robot arm and transferring the semiconductor chip to the mount member.

Abstract: A discrete bipolar transistor for use in high frequency circuits is disclosed, in which a base electrode is formed in a base region through contact holes formed in a thermal oxide film without forming a CVD oxide film on the thermal oxide film, and an emitter contact layer composed of polysilicon and an emitter electrode are formed on an emitter region. The wide diffusion of dopant that occurs during CVD oxide film annealing can be prevented, and a shallow base region can be formed.

Abstract: A semiconductor device in which a transistor having a first conduction type collector layer, a second conduction type base layer and a first conduction type emitter layer is formed on a semiconductor substrate. The device includes an insulating layer formed on the semiconductor substrate and having a contact hole for connecting an electrode to the base layer, a diffusion source layer formed in the contact hole and containing an impurity for controllably imparting the second conduction type, and a high concentration region formed in the vicinity of a boundary surface between the base layer and the diffusion source layer in the base layer, the high concentration region being formed smaller in thickness than the base layer, containing the same kind of impurity as the impurity contained in the diffusion source layer, and having an impurity concentration higher than the average impurity concentration of the base layer.

Abstract: The present invention is a method of fabricating a semiconductor device by transferring a semiconductor chip supported on a flexible support film to a mount member by means of a robot arm. This method comprises a film bending step of bending a support film so that same has a pickup face that lies along the movement direction of the robot arm and a withdrawal face that lies substantially perpendicular to this movement direction and does not interfere with the robot arm; a step of disposing the mount member, whereon the semiconductor chip is to be mounted, in a position facing the withdrawal face and flanking on the pickup face; and a step of picking up the semiconductor chip from the pickup face by means of the robot arm and transferring the semiconductor chip to the mount member.

Abstract: A vertical double diffuses MOSFET includes a nitride film (26) formed on a gate electrode (18). An ion implant window (34) is formed through the nitride film. P-type ions are implanted through the ion implant window into the semiconductor substrate (12), and the implanted ions are diffused to thereby form a main diffusion region (14). At the same time, the oxide film is grown inside the ion implant window to form a thick walled portion (36). Ions of the p-type are implanted through, as a mask, the thick walled portion, gate electrode and nitride film into semiconductor substrate, and thermally diffused thus forming a channel diffusion region (22). Further, n-type ions are implanted through the same mask and then thermally diffused to provide source diffusion regions.

Abstract: A vertical double diffuses MOSFET includes a nitride film (26) formed on a gate electrode (18). An ion implant window (34) is formed through the nitride film. P-type ions are implanted through the ion implant window into the semiconductor substrate (12), and the implanted ions are diffused to thereby form a main diffusion region (14). At the same time, the oxide film is grown inside the ion implant window to form a thick walled portion (36). Ions of the p-type are implanted through, as a mask, the thick walled portion, gate electrode and nitride film into semiconductor substrate, and thermally diffused thus forming a channel diffusion region (22). Further, n-type ions are implanted through the same mask and then thermally diffused to provide source diffusion regions.

Abstract: A vertical double diffuses MOSFET includes a nitride film (26) formed on a gate electrode (18). An ion implant window (34) is formed through the nitride film. P-type ions are implanted through the ion implant window into the semiconductor substrate (12), and the implanted ions are diffused to thereby form a main diffusion region (14). At the same time, the oxide film is grown inside the ion implant window to form a thick walled portion (36). Ions of the p-type are implanted through, as a mask, the thick walled portion, gate electrode and nitride film into semiconductor substrate, and thermally diffused thus forming a channel diffusion region (22). Further, n-type ions are implanted through the same mask and then thermally diffused to provide source diffusion regions.

Abstract: A perimeter gate wiring 52 comprises a contact portion 54 and an interconnecting portion 56 having narrower width than the contact portion 54 which connects the contact portion 54 mutually. And the perimeter gate wiring 52 is connected electrically with the gate perimeter portion 66 at the contact portion 54. A source wiring perimeter portion 58 comprises a contact portion 60 and an interconnecting portion 62 having narrower width than the contact portion 60 which connects the contact portion 60 mutually. And the source wiring perimeter portion 58 is connected electrically with a perimeter diffusion layer 74 in the contact portion 60. The contact portion 54 of the perimeter gate wiring 52 and the interconnecting portion 62 of the source wiring perimeter portion 58 are provided adjacently. Also, the interconnecting portion 56 of the perimeter gate wiring 52 and the contact portion 60 of the source wiring perimeter portion 58 are provided with one another adjacently.

Abstract: A perimeter gate wiring 52 comprises a contact portion 54 and an interconnecting portion 56 having narrower width than the contact portion 54 which connects the contact portion 54 mutually. And the perimeter gate wiring 52 is connected electrically with the gate perimeter portion 66 at the contact portion 54. A source wiring perimeter portion 58 comprises a contact portion 60 and an interconnecting portion 62 having narrower width than the contact portion 60 which connects the contact portion 60 mutually. And the source wiring perimeter portion 58 is connected electrically with a perimeter diffusion layer 74 in the contact portion 60. The contact portion 54 of the perimeter gate wiring 52 and the interconnecting portion 62 of the source wiring perimeter portion 58 are provided adjacently. Also, the interconnecting portion 56 of the perimeter gate wiring 52 and the contact portion 60 of the source wiring perimeter portion 58 are provided with one another adjacently.