Abstract: A gas detector wherein a porous coordination polymer represented by formula (1) is supported on a supporter, the supporting amount of the porous coordination polymer per area is 0.02 mg/cm2 or more and 0.3 mg/cm2 or less, Fex(pz)[Ni1-yMy(CN)4]??(1) (wherein, pz=pyrazine, 0.95?5?1.05 , M=Pd or pt, 0?y?0.15).

Abstract: A gas detection sheet wherein a porous coordination polymer represented by formula (1) is supported on a supporter and the air permeability of the gas detection sheet is 0.8 seconds or more and 60 seconds or less. Fex(pz)[Ni1-yMy(CN)4]??(1) (wherein, pz=pyrazine, 0.95?x<1.05, M=Pd or Pt, 0?y<0.15).

Abstract: Provided is an advanced heart failure treatment material, as a myocardial/cardiovascular regeneration device, that self-assembles, which can improve the universality and be used in an emergency by commercialization with no need of cell-culturing (cell-free) by controlling stem cells, and has a high therapeutic effect on the fundamental treatment of intractable cardiovascular diseases, in particular, advanced heart failure, in which not only the saving of lives but also improving the patient's quality of life (QOL) are urgent issues. The advanced heart failure treatment material includes a pharmaceutical agent, an agent holding for the pharmaceutical agent, and a myocardial support device.

Abstract: A porous coordination polymer represented by the following formula (1), wherein, the ratio A/B of the diffraction peak intensity A of (001) plane to the diffraction peak intensity B of (110) plane is 0.8 or more and 5.8 or less, Fex(pz)[Ni1-yMy(CN)4]??(1) wherein, pz=pyrazine, 0.95?x<1.05, M=Pd, Pt, 0?y<0.15. The present invention also provides a gas detecting material and a lithium ion secondary battery having the porous coordination polymer.

Abstract: A gas detection material having a Hofmann type porous coordination polymer of {Fe(pz)[Ni(CN)4]} (wherein, pz=pyrazine) which contains ferrous ion, tetracyanonickelate ion and pyrazine as the essential ingredients and has a pillared crystal shape. Also a lithium ion secondary battery, wherein, the outer package of the lithium ion secondary battery is covered by the gas detection material mentioned above.

Abstract: Disclosed is an EP1 antagonist, particularly a compound represented by the formula (I): wherein all symbols are as defined in the description, a salt thereof, a solvate thereof or a prodrug thereof. The compound, a salt thereof, a solvate thereof or a prodrug thereof is effective for prevention, treatment and/or symptom improvement of a dysuria (e.g., slow stream, splitting or spraying of the urine stream, intermittent stream, hesitancy, straining to void or terminal dribble).

Abstract: Provided is an advanced heart failure treatment material, as a myocardial/cardiovascular regeneration device, that self-assembles, which can improve the universality and be used in an emergency by commercialization with no need of cell-culturing (cell-free) by controlling stem cells, and has a high therapeutic effect on the fundamental treatment of intractable cardiovascular diseases, in particular, advanced heart failure, in which not only the saving of lives but also improving the patient's quality of life (QOL) are urgent issues. The advanced heart failure treatment material includes a pharmaceutical agent, an agent holding for the pharmaceutical agent, and a myocardial support device.

Abstract: The invention provides a method for manufacturing the silicon carbide single crystal wafer capable of improving the utilization ratio of the bulk silicon carbide single crystal, capable of improving characteristics of the element and capable of improving cleavability, and the silicon carbide single crystal wafer obtained by the manufacturing method. An ?(hexagonal)-silicon carbide single crystal wafer which has a flat homoepitaxial growth surface with a surface roughness of 2 nm or less and which has an off-angle from the (0001)c plane of 0.4° or less.

Abstract: Disclosed is a substance which has a low molecular weight, can be applied in a simpler manner, and has an immunopotentiating activity against cancer and/or a microorganism-mediated infectious disease. An EP4 agonist exhibits an immunopotentiating activity through the activation of a cytotoxic T cell, and is therefore useful for the prevention and/or treatment of cancer or a microorganism-mediated infection disease.

Abstract: Structures and methods for precision trench formation are disclosed. In one embodiment, a method for manufacturing a semiconductor device comprises forming a first oxygen-containing region in a semiconductor substrate by performing an oxygen ion implantation to a portion of the semiconductor substrate, and oxidizing the first oxygen-containing region using oxygen contained therein by performing a thermal processing to the semiconductor substrate, where the first oxygen-containing region is converted to a first oxide region. The method further comprises forming a groove in the semiconductor substrate by eliminating the first oxide region, where the performing thermal processing comprises subjecting the first oxygen-containing region to a gas low on oxygen.

Abstract: A pharmaceutical composition for topical administration for prevention and/or treatment of diseases associated with decrease in bone mass comprising an EP4 agonist as an active ingredient. An EP4 agonist, in which includes a compound possessing prostaglandin skeleton as a representative, possesses promoting action on bone formation, so it is useful for prevention and/or treatment of diseases associated with decrease in bone mass (bone diseases such as primary osteoporosis, secondary osteoporosis, bone metastasis of cancer, hypercalcemia, Paget's disease, bone loss and bone necrosis, postoperative osteogenesis, alternative therapy for bone grafting).

Abstract: A silicon carbide single crystal wafer wherein a substrate is cut out at an OFF angle from a (0001) c plane of an ?-type silicon carbide single crystal of less than 2° and in an OFF direction in which a deviation from a (11-20) direction is less than 10°, the number of substantially triangular lamination defects exposed from a surface of a wafer which is epitaxial grown on the substrate is less than 4/cm2 over the entire surface of the wafer. The invention provides a producing method of a silicon carbide single crystal wafer capable of enhancing the utility ratio of the bulk silicon carbide single crystal, the element characteristics and the cleavage, as well as a silicon carbide single crystal wafer obtained by such a producing method.

Abstract: A pharmaceutical composition for topical administration for prevention and/or treatment of diseases associated with decrease in bone mass comprising an EP4 agonist as an active ingredient. An EP4 agonist, in which includes a compound possessing prostaglandin skeleton as a representative, possesses promoting action on bone formation, so it is useful for prevention and/or treatment of diseases associated with decrease in bone mass (bone diseases such as primary osteoporosis, secondary osteoporosis, bone metastasis of cancer, hypercalcemia, Paget's disease, bone loss and bone necrosis, postoperative osteogenesis, alternative therapy for bone grafting).

Abstract: A memory cell system is provided including a first insulator layer over a semiconductor substrate, a charge trap layer over the first insulator layer, and slot where the charge trap layer includes a second insulator layer having the characteristic of being grown.

Abstract: An N-phenylarylsulfonylamide compound of formula (I) (R1 is COOH etc.; R2 is hydrogen, methyl, etc.; R3 and R4 are a combination of methyl and methyl, etc.; R5 is isopropyl etc.; Ar is thiazolyl, pyridyl, 5-methyl-2-furyl each optionally substituted with methyl; n is zero or 1), a synthetic intermediate for the compound and a process for its preparation. The compound of formula (I) binds to a prostaglandin E2 receptor, especially an EP1 subtype receptor, and antagonizes it. It is less affected by protein binding, so it has a satisfactory in vivo activity. Therefore, it is considered to be useful as an analgesic, an antipyretic agent, an agent for the treatment of pollakiuria (frequent urination) and/or lower urinary tract disease syndrome or an antineoplastic agent.

Abstract: A prostate cancer progression inhibitor comprises 4-(4-cyano-2-{[2-(4-fluoro-1-naphthyl)propanoyl]amino}phenyl)butyric acid, a salt thereof, a solvate thereof, or a prodrug thereof. 4-(4-Cyano-2-{[2-(4-fluoro-1-naphthyl)propanoyl]amino}phenyl)butyric acid is useful as a prostate cancer progression inhibitor because this butyric acid has, for example, a growth inhibiting effect and a hormone responsiveness recovering effect on prostate cancer that has acquired hormone resistance.

Abstract: At a stage where the growth height of the silicon carbide single crystal 15 reaches 0.5 to several mm, the guide member 14 used at the initial growth stage is replaced with another guide member 14. This guide member 14 has a length and an angle ? to the growth axis L of the silicon carbide single crystal, which are selected in consideration of the desired diameter and a possible growth height. Then, under the same conditions as those at the initial growth stage, the silicon carbide single crystal 15 having the desired diameter is grown on the seed crystal 13.

Abstract: Structures and methods for precision trench formation are disclosed. In one embodiment, a method for manufacturing a semiconductor device comprises forming a first oxygen-containing region in a semiconductor substrate by performing an oxygen ion implantation to a portion of the semiconductor substrate, and oxidizing the first oxygen-containing region using oxygen contained therein by performing a thermal processing to the semiconductor substrate, where the first oxygen-containing region is converted to a first oxide region. The method further comprises forming a groove in the semiconductor substrate by eliminating the first oxide region, where the performing thermal processing comprises subjecting the first oxygen-containing region to a gas low on oxygen.

Abstract: An EP1 agonist has an immunopotentiating effect mediated by cytotoxic T lymphocyte activation and/or natural killer cell activation, and is thus useful for the prevention and/or treatment of cancers, microbial infectious diseases and the like.

Abstract: Structures and methods for precision trench formation are disclosed. In one embodiment, a method for manufacturing a semiconductor device comprises forming a first oxygen-containing region in a semiconductor substrate by performing an oxygen ion implantation to a portion of the semiconductor substrate, and oxidizing the first oxygen-containing region using oxygen contained therein by performing a thermal processing to the semiconductor substrate, where the first oxygen-containing region is converted to a first oxide region. The method further comprises forming a groove in the semiconductor substrate by eliminating the first oxide region, where the performing thermal processing comprises subjecting the first oxygen-containing region to a gas low on oxygen.