Abstract: A vaporized-fuel processing apparatus includes an intake passage, a chamber, a first purge guide hole, and a second purge guide hole. The intake passage is defined by an intake manifold and a throttle body. The chamber communicates with the intake passage. The first purge guide hole is to guide vaporized fuel adsorbed in a canister toward the chamber. The second purge guide hole is to guide the vaporized fuel adsorbed in the canister toward the chamber.

Abstract: An intake apparatus for an internal combustion engine includes a plurality of branch pipes connected at downstream ends thereof to an engine main body, an intake chamber to which upstream ends of the branch pipes are connected, and a common intake air introducing part connected to the center of the intake chamber in a cylinder arrangement direction. The intake chamber includes a projecting part projecting toward the engine main body relative to the common intake air introducing part. An EGR introducing passage is connected to the center of the projecting part in the cylinder arrangement direction. A downstream end of the EGR introducing passage is directed toward a wall of the projecting part on the common intake air introducing part side.

Abstract: A vaporized-fuel processing apparatus includes an intake passage, a chamber, a first purge guide hole, and a second purge guide hole. The intake passage is defined by an intake manifold and a throttle body. The chamber communicates with the intake passage. The first purge guide hole is to guide vaporized fuel adsorbed in a canister toward the chamber. The second purge guide hole is to guide the vaporized fuel adsorbed in the canister toward the chamber.

Abstract: An intake apparatus for an internal combustion engine includes a plurality of branch pipes connected at downstream ends thereof to an engine main body, an intake chamber to which upstream ends of the branch pipes are connected, and a common intake air introducing part connected to the center of the intake chamber in a cylinder arrangement direction. The intake chamber includes a projecting part projecting toward the engine main body relative to the common intake air introducing part. An EGR introducing passage is connected to the center of the projecting part in the cylinder arrangement direction. A downstream end of the EGR introducing passage is directed toward a wall of the projecting part on the common intake air introducing part side.

Abstract: A Hall element is provided which has a high sensitivity and contributes to an improvement in S/N ratio per current by using a low-concentration n-well within a suitable range. The Hall element includes a p-type semiconductor substrate layer of p-type silicon, and an n-type impurity region located in a surface of the p-type semiconductor substrate layer, the n-type impurity region functioning as a magnetic sensing part. A p-type impurity region is located in a surface of the n-type impurity region, and n-type regions are located laterally of the p-type impurity region. A p-type substrate region having a resistivity equal to that of the p-type semiconductor substrate layer is located to extend around the n-type impurity region. An impurity concentration N in the n-type impurity region functioning as the magnetic sensing part is preferably from 1×1016 to 3×1016(atoms/cm3) and a distribution depth of the impurity concentration is preferably from 3.0 ?m to 5.0 ?m.

Abstract: A Hall element is provided which has a high sensitivity and contributes to an improvement in S/N ratio per current by using a low-concentration n-well within a suitable range. The Hall element includes a p-type semiconductor substrate layer 21 of p-type silicon, and an n-type impurity region 22 located in a surface of the p-type semiconductor substrate layer 21, the n-type impurity region 22 functioning as a magnetic sensing part 26. A p-type impurity region 23 is located in a surface of the n-type impurity region 22, and n-type regions 24 are located laterally of the p-type impurity region 23. A p-type substrate region 21a having a resistivity equal to that of the p-type semiconductor substrate layer 21 is located to extend around the n-type impurity region 22. An impurity concentration N in the n-type impurity region 22 functioning as the magnetic sensing part 26 is preferably from 1×1016 to 3×1016 (atoms/cm3), and a distribution depth D of the impurity concentration is preferably from 3.0 ?m to 5.0 ?m.