Abstract: A machining tool is rotated around an axis and includes a machining blade portion having a first machining blade in the distal end direction with respect to a rake face and a second machining blade located in the radially outward direction with respect to the rake face, and a protrusion formed on the rake face and having a tip for cutting chips coming from the first machining blade. The protrusion includes an inner forming portion that is located in the radially inward direction from the reference line and an outer forming portion that is located in the radially outward direction from the reference line, and the width of the inner forming portion is wider than the width of the outer forming portion.

Abstract: A control system (10) includes, for each type of Virtual Network Function (VNF), a VNF compatibility condition indicating a condition of allocation of resources by which the VNF corresponding to the type is allowed to coexist with other VNFs in an identical computer, and resource usage information indicating resources in use by the VNF in the computer and unused resources. The control system (10) includes a VNF deploy control unit (14) referencing, in a case of receiving an instruction to additionally install a VNF, the type of the VNF to be additionally installed, the VNF compatibility condition, and the resource usage information to determine, from among the unused resources, resources allocated to the VNF to be additionally installed, and a resource allocation processing unit allocating the determined resources to the VNF to be additionally installed.

Abstract: A semiconductor device comprises: a cell region and a peripheral region. The cell region includes an insulation film covering cells, and an electrode portion including a stacked part stacked on the insulation film. The peripheral region includes a first semiconductor layer of a first conductive type, a second semiconductor region of a second conductivity type, a peripheral insulation film, a peripheral electrode portion, a barrier layer, and a passivation film. The barrier layer covers both the peripheral insulation film and the peripheral electrode portion and has a smaller diffusion coefficient than the peripheral insulation film. The passivation film stacks on the barrier layer and has a larger diffusion coefficient than the barrier layer. The peripheral electrode portion includes a projection. A thickness of the projection is less than a thickness of the stacked part.

Abstract: This semiconductor device comprises an active region and an outer peripheral region. The active region has a first-electroconductivity-type drift layer and a second-electroconductivity-type body layer. The active region has a main cell region having a main cell, a first insulating film covering the main cell, a first electrode part stacked on the first insulating film, a sense cell region having a sense cell, a second insulating film covering the sense cell, and a second electrode part stacked on the second insulating film. Between the main cell region and the sense cell region, there is formed a second-electroconductivity-type well region. The first electrode part and the second electrode part are electrically connected by the well region.

Abstract: This semiconductor device is provided with: a semiconductor layer; a cell that is provided on the semiconductor layer; an insulating film that covers the cell; a main electrode part that is superposed on the insulating film; a temperature-sensitive diode for sensing temperatures, the diode having a first electrode and a second electrode; and a connection electrode for diode, the connection electrode being used for the purpose of connecting the first electrode to the outside. The main electrode part has: a first bonding region to which a first conductive member is bonded; and a second bonding region to which a second conductive member is bonded. When viewed from the thickness direction of the semiconductor layer, the cell is provided on both a first semiconductor region in the semiconductor layer, and a second semiconductor region in the semiconductor layer.

Abstract: An outer peripheral region of this semiconductor device comprises: a guard ring; an insulating film and an intermediate insulating film that cover a surface of the guard ring; a field plate; a passivation film provided so as to cover both the insulating film and the field plate; and a barrier layer that has a smaller diffusion coefficient than the insulating film and the intermediate insulating film, and than the passivation film. The field plate includes a first section provided within an opening in the insulating film and the intermediate insulating film, and a second section having a protrusion that protrudes outward beyond the first section. The barrier layer has a section that is inserted between the protrusion and the guard ring.

Abstract: This semiconductor device is provided with: a semiconductor layer; an insulating film which is formed on the surface of the semiconductor layer; a main cell region which comprises a main cell, while being provided in the semiconductor layer; and a temperature-sensing diode for sensing the temperature, the diode being provided in a region other than the main cell region. The temperature-sensing diode comprises a diode cell which is composed of: a first semiconductor region of a first conductivity type; and a second semiconductor region of a second conductivity type. The second semiconductor region is formed into a ring shape so as to surround the first semiconductor region. The inner lateral surface of the second semiconductor region is joined with the first semiconductor region.

Abstract: A glow plug includes a cylindrical housing having an axial hole and provided with a screw portion, and a heater member which is inserted into the axial hole in a state where at least a front end portion thereof projects from a front end of the housing. The housing includes a pressure contact portion brought into pressure contact with a seat surface of an internal combustion engine when the screw portion is screwed into a mounting hole of the internal combustion engine, and a cylindrical front-end-side body portion provided between the pressure contact portion and the screw portion. The front-end-side body portion includes a holding portion which holds the heater member directly or indirectly at an inner circumference thereof, and the holding portion has a smallest outer diameter in the front-end-side body portion.