Patents by Inventor Takayuki Shingyoji

Takayuki Shingyoji has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Process for producing silicon single crystal layer and silicon single crystal layer
    Patent number: 7229496
    Abstract: A thermal processing operation is performed for a silicon wafer W (silicon single-crystal layer) in an atmosphere gas which is formed by a hydrogen gas or an inert gas or a mixture gas of these gases at a temperature in a range of 600° C. to 950° C. (here, the temperature should not be greater than 950° C.). By doing this, a quality of a surface of the silicon single-crystal layer is improved.
    Type: Grant
    Filed: March 5, 2003
    Date of Patent: June 12, 2007
    Assignee: Sumitomo Mitsubishi Silicon Corporation
    Inventors: Takashi Shibayama, Yoshio Murakami, Takayuki Shingyoji
  • Silicon wafer production process and silicon wafer
    Patent number: 7067005
    Abstract: This silicon wafer production process has a step of cutting a silicon wafer from a silicon single crystal ingot in a perfect region which includes a perfect region P free of agglomerates of interstitial-silicon-type point defects and agglomerates of vacancy-type point defects and/or a region R in which there is occurrence of ring-shaped oxidation induced stacking faults, and a step of performing rapid thermal annealing on the silicon wafer in a hydrogen atmosphere, an argon atmosphere or an atmosphere containing a mixed gas thereof.
    Type: Grant
    Filed: August 6, 2004
    Date of Patent: June 27, 2006
    Assignee: Sumitomo Mitsubishi Silicon Corporation
    Inventors: Takashi Shibayama, Yoshio Murakami, Takayuki Shingyoji
  • Silicon wafer production process and silicon wafer
    Publication number: 20060027159
    Abstract: This silicon wafer production process has a step of cutting a silicon wafer from a silicon single crystal ingot in a perfect region which includes a perfect region P free of agglomerates of interstitial-silicon-type point defects and agglomerates of vacancy-type point defects and/or a region R in which there is occurrence of ring-shaped oxidation induced stacking faults, and a step of performing rapid thermal annealing on the silicon wafer in a hydrogen atmosphere, an argon atmosphere or an atmosphere containing a mixed gas thereof.
    Type: Application
    Filed: August 6, 2004
    Publication date: February 9, 2006
    Applicant: Sumitomo Mitsubishi Silicon Corporation
    Inventors: Takashi Shibayama, Yoshio Murakami, Takayuki Shingyoji
  • Process for producing silicon single crystal layer and silicon single crystal layer
    Publication number: 20050153550
    Abstract: A thermal processing operation is performed for a silicon wafer W (silicon single-crystal layer) in an atmosphere gas which is formed by a hydrogen gas or an inert gas or a mixture gas of these gases at a temperature in a range of 600° C. to 950° C. (here, the temperature should not be greater than 950° C.). By doing this, a quality of a surface of the silicon single-crystal layer is improved.
    Type: Application
    Filed: March 5, 2003
    Publication date: July 14, 2005
    Applicant: Sumitomo Mitsubishi Silicon Corporation
    Inventors: Takashi Shibayama, Yoshio Murakami, Takayuki Shingyoji
  • Sputtering apparatus
    Patent number: 4411763
    Abstract: A sputtering apparatus for coating by the use of a target cathode within a vacuum chamber an article to be treated which is held on an article holding means within the vacuum chamber. The target cathode is of a tubular skeleton structure and is disposed so as to surround the article holding means.
    Type: Grant
    Filed: August 24, 1982
    Date of Patent: October 25, 1983
    Assignee: Mitsubishi Kinzoku Kabushiki Kaisha
    Inventors: Takeshi Itaba, Akio Nishiyama, Noribumi Kikuchi, Takayuki Shingyoji, Yuzo Ohsawa