Abstract: An anomaly diagnosis apparatus includes a command generation unit that generates a command value to specify the operation of a motor or a drive machine, a drive control unit that performs feedback control on the motor based on a control gain so that the operation of the motor or the drive machine follows the command value, a data switching unit that switches selected time-series data by selecting data from time-series data indicating the state of the motor or the drive machine, based on the result of a comparison between a control bandwidth determined from the control gain and a threshold determined from the drive machine, and an anomaly determination unit that determines an anomalous state of the motor or the drive machine, based on the selected time-series data.

Abstract: A photoelectric conversion element that reduces a residual image while enhancing heat resistance and includes a first electrode; a photoelectric conversion layer; a first interfacial layer; and a second electrode in this order, the photoelectric conversion layer has a quantum dot, the quantum dot is a PbS quantum dot, the first interfacial layer has an organic compound having a glass transition temperature of 100° ° C. or higher, and the following Equation (1) is met: ?hEBL?1.0×10?3 (cm2/Vs) . . . (1), where ?hEBL denotes hole mobility of the first interfacial layer.

Abstract: A binding device includes: a binding unit that binds a plurality of media; a first moving unit that moves along a width direction of the medium; a second moving unit that is supported by the first moving unit, supports the binding unit, and moves in an inclined direction with respect to the width direction of the medium; and a contact unit that is supported by the first moving unit and comes into contact with a guide unit that extends in a movement direction of the first moving unit.

Abstract: A post-processing device includes: a unit that performs post-processing; a guide unit that guides the unit to a position at which the unit performs the post-processing, and has a first guide portion extending in a width direction of a medium, a second guide portion that is disposed at an end portion of the first guide portion, is inclined with respect to the width direction of the medium, and guides the unit to a corner of the medium, a third guide portion that is disposed at the end portion of the first guide portion and branches off from the second guide portion to extend, and a fourth guide portion that connects the second guide portion to the third guide portion; and a branching unit that is disposed at a portion at which the second guide portion and the third guide portion branch off from each other, guides the unit from the first guide portion toward the second guide portion, and guides the unit from the third guide portion toward the first guide portion.

Abstract: This invention provides a method for diagnosis of rheumatoid arthritis of a subject, a method for assisting diagnosis of rheumatoid arthritis, and a method for monitoring disease activity of rheumatoid arthritis and/or therapeutic effects of an agent for rheumatoid arthritis, comprising detecting citrullination of an arginine residue of the inter-?-trypsin inhibitor heavy chain (ITIH) 4 in a biological sample obtained from the subject. This invention also provides a citrullinated protein derived from the protein having the amino acid sequence as shown in SEQ ID NO: 1 or 5 by modification of arginine 438 into citrulline or a fragment thereof, an antibody binding to such citrullinated protein, and an agent for diagnosis of rheumatoid arthritis comprising such antibody.

Abstract: A manufacturing method for a semiconductor apparatus sequentially includes bonding a first chip and a second chip together using an adhesive. The first chip includes a first electrode and has a protrusion, and the second chip has a recess. In the bonding, the first chip and the second chip are bonded together in such a manner that the protrusion is positioned into the recess. Further, the method includes forming a through hole in the second chip to expose the first electrode, the first surface being opposite to a second surface having the recess, and forming the second electrode which is electrically connected to the first electrode, in the through hole.

Abstract: The present disclosure is a photoelectric conversion element including: a photoelectric conversion layer 5 including a first quantum dot 4a and a second quantum dot 4b, a ratio X of the number of heavy metal atoms to the number of oxygen group atoms is less than 2 on a surface of the nanoparticle of the first quantum dot 4a, the ratio X is greater than or equal to 2 on a surface of the nanoparticle of the second quantum dot 4b, and Equation (1) is satisfied: 0.3<N??(1), where N denotes a ratio of the number of second quantum dots to the number of first quantum dots.

Abstract: There is disclosed a semiconductor device including: a substrate; a plurality of first electrodes arranged away from each other with gaps on the substrate; a first intermediate layer arranged on each of the plurality of first electrode; a second intermediate layer, at least a part of which is arranged on each of the gaps of the plurality of first electrodes; a photoelectric conversion layer arranged on the first intermediate layer and the second intermediate layer; and a second electrode arranged on the photoelectric conversion layer. A content of oxygen on a molar basis in the second intermediate layer is higher than a content of oxygen on a molar basis in the first intermediate layer.

Abstract: A method includes a step of forming a sacrificial layer on a first film, a step of forming a second film on the sacrificial layer, a step of forming an etching opening that extends through at least one of the first film and the second film so as to communicate with the sacrificial layer, and a step of forming a hollow portion by etching the sacrificial layer using a gas containing a fluorine-containing gas and hydrogen via the etching opening, wherein a composition ratio of silicon to nitrogen in a first region having a face in contact with the sacrificial layer is larger than a composition ratio of silicon to nitrogen in a second region not including the first region.

Abstract: A semiconductor apparatus includes, a substrate having a main surface, an upper electrode disposed above the substrate, a first lower electrode and a second lower electrode disposed between the substrate and the upper electrode, an isolation region disposed between the first lower electrode and the second lower electrode, a functional layer configured to perform light emission or photoelectric conversion, and an interface layer disposed at least on the first lower electrode. The semiconductor apparatus further includes a first insulator portion that is disposed between the first lower electrode and the second lower electrode and includes a first portion disposed at a position farther away from the main surface than an upper surface of the interface layer.

Abstract: A quantum dot includes an inorganic particle, and an organic ligand and an inorganic ligand on a surface of the inorganic particle, and the molar percentage of the inorganic ligand relative to the total amount of the inorganic ligand and the organic ligand is 25% or more and 99.8% or less.

Abstract: An embodiment according to the present disclosure provides a photoelectric conversion element including a first electrode, a second electrode, and a photoelectric conversion layer disposed between the first electrode and the second electrode, wherein the photoelectric conversion layer includes a first region, a second region disposed between the first region and the second electrode, and a third region that is disposed between the second region and the second electrode and that is in contact with the second region, the inorganic ligand ratio in the second region is higher than the inorganic ligand ratio in the first region, the inorganic ligand ratio at the interface of the third region to the second region is lower than the inorganic ligand ratio in the first region, and the inorganic ligand ratio in the second region increases with increasing proximity to the third region.

Abstract: Disclosed is a semiconductor device includes a substrate provided with a plurality of pixel electrodes and a control electrode, a functional layer provided over the plurality of pixel electrodes, a transparent electrode provided over the functional layer, an insulating layer provided so as to cover an upper surface and a side surface of a laminate including the functional layer and the transparent electrode and having a first opening reaching the transparent electrode, and a light-shielding conductive layer connected to the transparent electrode via the first opening and constituting at least a part of an electrical path connecting the transparent electrode and the control electrode.

Abstract: A photoelectric conversion element that reduces a residual image while enhancing heat resistance and includes a first electrode; a photoelectric conversion layer; a first interfacial layer; and a second electrode in this order, the photoelectric conversion layer has a quantum dot, the quantum dot is a PbS quantum dot, the first interfacial layer has an organic compound having a glass transition temperature of 100° C. or higher, and the following Equation (1) is met: ?hEBL?1.0×10?3 (cm2/Vs) . . . (1), where ?hEBL denotes hole mobility of the first interfacial layer.

Abstract: A semiconductor device includes an anode, a cathode, a first functional layer between the anode and cathode, and a second functional layer between the first functional layer and the cathode. The first functional layer contains a first quantum dot having a first ligand, and the second functional layer contains a second quantum dot having a second ligand different from the first ligand. The second ligand is an aromatic compound having a sulfide bond and an ester bond.

Abstract: The present disclosure is a photoelectric conversion element including: a photoelectric conversion layer 5 including a first quantum dot 4a and a second quantum dot 4b, a ratio X of the number of heavy metal atoms to the number of oxygen group atoms is less than 2 on a surface of the nanoparticle of the first quantum dot 4a, the ratio X is greater than or equal to 2 on a surface of the nanoparticle of the second quantum dot 4b, and Equation (1) is satisfied: 0.3<N??(1), where N denotes a ratio of the number of second quantum dots to the number of first quantum dots.

Abstract: There is disclosed a semiconductor device including: a substrate; a plurality of first electrodes arranged away from each other with gaps on the substrate; a first intermediate layer arranged on each of the plurality of first electrode; a second intermediate layer, at least a part of which is arranged on each of the gaps of the plurality of first electrodes; a photoelectric conversion layer arranged on the first intermediate layer and the second intermediate layer; and a second electrode arranged on the photoelectric conversion layer. A content of oxygen on a molar basis in the second intermediate layer is higher than a content of oxygen on a molar basis in the first intermediate layer.

Abstract: A semiconductor apparatus includes, a substrate having a main surface, an upper electrode disposed above the substrate, a first lower electrode and a second lower electrode disposed between the substrate and the upper electrode, an isolation region disposed between the first lower electrode and the second lower electrode, a functional layer configured to perform light emission or photoelectric conversion, and an interface layer disposed at least on the first lower electrode. The semiconductor apparatus further includes a first insulator portion that is disposed between the first lower electrode and the second lower electrode and includes a first portion disposed at a position farther away from the main surface than an upper surface of the interface layer.

Abstract: A quantum dot includes an inorganic particle, and an organic ligand and an inorganic ligand on a surface of the inorganic particle, and the molar percentage of the inorganic ligand relative to the total amount of the inorganic ligand and the organic ligand is 25% or more and 99.8% or less.

Abstract: A manufacturing method for a semiconductor apparatus sequentially includes bonding a first chip and a second chip together using an adhesive. The first chip includes a first electrode and has a protrusion, and the second chip has a recess. In the bonding, the first chip and the second chip are bonded together in such a manner that the protrusion is positioned into the recess. Further, the method includes forming a through hole in the second chip to expose the first electrode, the first surface being opposite to a second surface having the recess, and forming the second electrode which is electrically connected to the first electrode, in the through hole.